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    D12S60 Search Results

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    D12S60 Price and Stock

    Samtec Inc FFSD-12-S-60.00-01-N

    .050 X .050 C.L. FEMALE IDC ASSE
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    DigiKey FFSD-12-S-60.00-01-N Bulk 57 1
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    Mouser Electronics FFSD-12-S-60.00-01-N
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    Newark FFSD-12-S-60.00-01-N Bulk 1
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    Master Electronics FFSD-12-S-60.00-01-N
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    Sager FFSD-12-S-60.00-01-N 1
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    Samtec Inc TCMD-12-S-60.00-01

    2MM DOUBLE ROW MALE IDC ASSEMBLY
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    DigiKey TCMD-12-S-60.00-01 Bulk 1
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    Avnet Americas TCMD-12-S-60.00-01 Bulk 1
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    Mouser Electronics TCMD-12-S-60.00-01
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    Newark TCMD-12-S-60.00-01 Bulk 1
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    Master Electronics TCMD-12-S-60.00-01
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    Sager TCMD-12-S-60.00-01 1
    • 1 $23.04
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    Samtec Inc IDSD-12-S-60.00-ST8

    INSULATION DISPLACEMENT TERMINAL
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    DigiKey IDSD-12-S-60.00-ST8 Bulk 1
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    Mouser Electronics IDSD-12-S-60.00-ST8
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    Newark IDSD-12-S-60.00-ST8 Bulk 1
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    Master Electronics IDSD-12-S-60.00-ST8
    • 1 $33.85
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    Sager IDSD-12-S-60.00-ST8 1
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    Samtec Inc HCSD-12-S-60.00-01-N-G

    IDC SOCKET AND TERMINAL CABLE AS
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    DigiKey HCSD-12-S-60.00-01-N-G Bulk 1
    • 1 $44.39
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    Avnet Americas HCSD-12-S-60.00-01-N-G Bulk 1
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    Mouser Electronics HCSD-12-S-60.00-01-N-G
    • 1 $26.56
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    Master Electronics HCSD-12-S-60.00-01-N-G
    • 1 $33.24
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    Sager HCSD-12-S-60.00-01-N-G 1
    • 1 $26.56
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    Samtec Inc HCSD-12-S-60.00-01-N

    Cable Assembly Ribbon 1.524m 24 POS IDC RCP - Bulk (Alt: HCSD-12-S-60.00-01)
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    Avnet Americas HCSD-12-S-60.00-01-N Bulk 1
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    Master Electronics HCSD-12-S-60.00-01-N
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    Find more D12S60 price and stock on Findchips.com

    D12S60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    d12s60

    Abstract: 2N3904 2N3906
    Text: D Series D12S60 12 Volt Input Dc to Ac Inverter .100 [2,54] 6 3 4 1 .175 [4,45] 5 .300 [7,62] 2.250 [57,15] .38 [9,65] Max .250 [6,35] 6X 2.866 [72,80] .149 [3,78] .200 [5,08] .624 [15,85] 2.630 [66,8] .410 [10,41] The D12S60 is a generic dc to ac inverter designed to generate 6 mArms into a 350 - 550 volt load


    Original     		PDF D12S60 D12S60 2N3904 2N3906 2N3904 2N3906

    Untitled

    Abstract: No abstract text available
    Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery


    Original     		PDF SDT12S60 PG-TO220-2-2. Q67040-S4470 D12S60

    d12s60

    Abstract: SDT12S60 diode schottky code 03 Schottky diode TO220 Q67040-S4470 US180
    Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery


    Original     		PDF SDT12S60 PG-TO220-2-2. Q67040-S4470 D12S60 PG-TO-220-2-2 d12s60 SDT12S60 diode schottky code 03 Schottky diode TO220 Q67040-S4470 US180

    D12S60C

    Abstract: IDH12S60C JESD22 uc1020
    Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDH12S60C PG-TO220-2 D12S60C D12S60C IDH12S60C JESD22 uc1020

    D12S60C

    Abstract: IDT12S60 R600 IDT12S60C
    Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT12S60C PG-TO220-2-2 IDT12S60C PG-TO220-2-2 D12S60C IDT12S60 R600

    d12s60

    Abstract: Q67040-S4470 SDT12S60 diode schottky 600v infineon
    Text: SDT12S60 Preliminary data Silicon Carbide Schottky Diode  Worlds first 600V Schottky diode Product Summary  Revolutionary semiconductor V 600 VRRM material - Silicon Carbide  Switching behavior benchmark Qc 30 nC  No reverse recovery IF 12 A P-TO220-2-2.


    Original     		PDF SDT12S60 P-TO220-2-2. Q67040-S4470 D12S60 d12s60 Q67040-S4470 SDT12S60 diode schottky 600v infineon

    d12s60

    Abstract: SDT12S60
    Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery


    Original     		PDF SDT12S60 PG-TO220-2-2. Q67040-S4470 D12S60 d12s60 SDT12S60

    Untitled

    Abstract: No abstract text available
    Text: IDT12S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 30 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 12 A • Temperature independent switching behavior I F @ T C < 100 °C


    Original     		PDF IDT12S60C PG-TO220-2-2 20mA2)

    D12S60C

    Abstract: d12s60 PG-TO220 IDT12S60C JESD22
    Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT12S60C PG-TO220-2-2 D12S60C D12S60C d12s60 PG-TO220 IDT12S60C JESD22

    IDH12S60C

    Abstract: d12s60 D12S60C
    Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior


    Original     		PDF IDH12S60C IDH12S60C PG-TO220-2 D12S60C d12s60

    d12s60

    Abstract: D12S60C Q67040-S4470 SDT12S60
    Text: SDT12S60 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 30 nC • No reverse recovery


    Original     		PDF SDT12S60 P-TO220-2-2. Q67040-S4470 D12S60 d12s60 D12S60C Q67040-S4470 SDT12S60

    D12S60C

    Abstract: pg-to220-2-2 IDT12S60C JESD22
    Text: IDT12S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 30 nC IF 12 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior


    Original     		PDF IDT12S60C PG-TO220-2-2 D12S60C PG-TO220-2-2: D12S60C pg-to220-2-2 IDT12S60C JESD22

    Untitled

    Abstract: No abstract text available
    Text: IDH12S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 30 nC IF 12 A • No temperature influence on the switching behavior


    Original     		PDF IDH12S60C PG-TO220-2 D12S60C