D10G60C
Abstract: IDH10SG60C D10G60 JESD22
Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior
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IDH10SG60C
20mA2)
D10G60C
IDH10SG60C
D10G60
JESD22
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D10G60C
Abstract: No abstract text available
Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDD10SG60C
20mA2)
PG-TO252-3
D10G60C
D10G60C
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D10G60C
Abstract: D10G60
Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C
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IDH10SG60C
20mA2)
PG-TO220-2
D10G60C
D10G60C
D10G60
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Untitled
Abstract: No abstract text available
Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior
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Original
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PDF
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IDH10SG60C
20mA2)
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Untitled
Abstract: No abstract text available
Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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PDF
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IDD10SG60C
20mA2)
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D10G60
Abstract: No abstract text available
Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C
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Original
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PDF
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IDH10SG60C
20mA2)
D10G60
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D10G60C
Abstract: IDD10SG60C JESD22
Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior
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Original
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PDF
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IDD10SG60C
20mA2)
D10G60C
IDD10SG60C
JESD22
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D10G60C
Abstract: D10G60 IDD10SG60C JESD22
Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior
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Original
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PDF
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IDD10SG60C
20mA2)
D10G60C
D10G60
IDD10SG60C
JESD22
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D10G60
Abstract: No abstract text available
Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior
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Original
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PDF
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IDD10SG60C
20mA2)
D10G60
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