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    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power ' PidB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G-|dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally matched • Hermetically sealed package


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    TIM4951-8 MW50570196 D02S405 TIM4951-8 PDF