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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: á P * S M F -0 3 1 0 0 B ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r G e lili O p tÍV H ÍZ G C l G aAs FET 2-20 GHz Description Features The SMF-03100 is a 300 \|im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and	OCR Scan	PDF	SMF-03100 D017T55

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: á P * S M F -0 3 1 0 0 B ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r G e lili O p tÍV H ÍZ G C l G aAs FET 2-20 GHz Description Features The SMF-03100 is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and

OCR Scan

PDF

SMF-03100 D017T55