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    VP 1176

    Abstract: HMF-06100-200 HMF06100-200
    Text: SAMSUNG ELECTRONICS INC SI HARRIS bOE D 7=^4142 D011A71 4 ti b HM F-06140 -200 Gain Optimized GaAs FET 2-14 GHz PRODUCT DATA Features * +11.5 dB MAG with +19 dBm Associated Output Power at 8 GHz Chip Devices are Selected from Standard Military Grade Wafers


    OCR Scan     		D011A71 F-06140 HMF-06140-200 HMF06100-200. VP 1176 HMF-06100-200 HMF06100-200 PDF