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    Text: Sk “TOSHIB A -CDISCKLTL/OH IÖ F 9097250 T O S H IB A D IS C R E T E /O P T O 2SA1328 TO TT SS D D00731b 56C 073L6 D 7 " - 3 _ SILICON PNP EPITAXIA L TYPE (PCT PROCESS) Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 1 Q 3 M A X . 0 3 .6 ± 0.2 FEATURES:


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    PDF 2SA1328 D00731b 073L6 2SC3345 300X300X2mm