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    D-PAK DEVICE MARKING CODE TABLE Search Results

    D-PAK DEVICE MARKING CODE TABLE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    D-PAK DEVICE MARKING CODE TABLE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LM317T

    Abstract: lm317* marking code LM317T applications LM317 regulator BLOCK DIAGRAM LM317T ST lm317 Transistor LM317t LM317t circuit lm317t st marking code LM317T CURRENT CIRCUIT
    Text: Revised June 2005 LM317 3-Terminal Positive Adjustable Regulator General Description Features This monolithic integrated circuit is an adjustable 3-terminal positive voltage regulator designed to supply more than 1.5A of load current with an output voltage adjustable over


    Original     		PDF LM317 O-220 LM317T LM317D2TXM O-22irchild lm317* marking code LM317T applications LM317 regulator BLOCK DIAGRAM LM317T ST Transistor LM317t LM317t circuit lm317t st marking code LM317T CURRENT CIRCUIT

    Untitled

    Abstract: No abstract text available
    Text: I2P AK BUK9E1R9-40E N-channel 40 V, 1.9 mΩ logic level MOSFET in I²PAK 5 June 2013 Product data sheet 1. General description 2 Logic level N-channel MOSFET in a I PAK package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK9E1R9-40E

    B80NF55-06

    Abstract: No abstract text available
    Text: STB80NF55-06T N-channel 55 V, 5 mΩ, 80 A STripFET II Power MOSFET in a D²PAK package Features Order code VDSS RDS on max. ID STB80NF55-06T 55 V < 6.5 mΩ 80A TAB • Exceptional dv/dt capability Applications ■ Switching application ■ Automotive 3


    Original     		PDF STB80NF55-06T B80NF55-06

    Untitled

    Abstract: No abstract text available
    Text: STPS8H100 High voltage power Schottky rectifier Datasheet - production data Description Schottky barrier rectifier designed for high frequency compact switched mode power supplies such as adaptators and on board DC/DC converters. K A NC D2PAK STPS8H100G Table 1. Device summary


    Original     		PDF STPS8H100 STPS8H100G O-220AC STPS8H100D O-220FPAC STPS8H100FP DocID5387

    ISD25

    Abstract: STB18NF30
    Text: STB18NF30 N-channel 330 V, 18 A STripFET II Power MOSFET in D²PAK package Preliminary data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A TAB • 100% avalanche tested ■ 175 °C junction temperature 3 1 Applications ■ D²PAK


    Original     		PDF STB18NF30 ISD25 STB18NF30

    MX25L6406EM2I-12G TR

    Abstract: No abstract text available
    Text: T2550-12T, T2550-12G 1200 V 25 A Snubberless Triac Datasheet − production data Description A2 Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable for either for inductive, capacitive or resistive load


    Original     		PDF T2550-12T, T2550-12G T2550-12 O-220AB. O-220AB T2550-12T) T2550-12T T2550-12G) MX25L6406EM2I-12G TR

    B230NH03L

    Abstract: 3M Philippines
    Text: STB230NH03L N-channel 30 V, 2.3 mΩ, 80 A D²PAK STripFET Power MOSFET Features Order code VDSS RDS on ID STB230NH03L 30V < 3mΩ 80A(1) TAB 1. This value is limited by package • RDS(on) Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced


    Original     		PDF STB230NH03L B230NH03L 3M Philippines

    Untitled

    Abstract: No abstract text available
    Text: STPS20SM60C Power Schottky rectifier Features • A1 K High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode


    Original     		PDF STPS20SM60C STPS20SM60C O-220AB, O-220FPAB, O-220AB STPS20SM60CT O-220FPAB STPS20SM60CFP

    STPS20

    Abstract: No abstract text available
    Text: STPS20SM60C Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A1 K A2 K K A2 A2 Description A1 The STPS20SM60C is a dual diode Schottky rectifier, suited for high frequency switch mode


    Original     		PDF STPS20SM60C STPS20SM60C O-220AB, O-220FPAB, STPS20SM60CG-TR STPS20SM60CR O-220AB STPS20SM60CT O-220FPAB STPS20SM60CFP STPS20

    STB18NF30

    Abstract: No abstract text available
    Text: STB18NF30 N-channel 330 V, 160 mΩ, 18 A STripFET II Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max. ID STB18NF30 330 V 180 mΩ 18 A • 100% avalanche tested ■ 175 °C junction temperature TAB 3 1 Applications


    Original     		PDF STB18NF30 STB18NF30

    Untitled

    Abstract: No abstract text available
    Text: STB150N3LH6 N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET VI DeepGATE™ Power MOSFET in D²PAK package Datasheet — production data Features Order code VDSS RDS on max ID(1) PTOT STB150N3LH6 30 V 3.0 mΩ 80 A 110 W 1. Current limited by package. •


    Original     		PDF STB150N3LH6 STB150N3LH6 150N3LH6 STB150N3LHin

    PS20M100SG

    Abstract: No abstract text available
    Text: STPS20M100S Power Schottky rectifier Features A 1 K(2) • High current capability ■ Avalanche rated ■ Low forward voltage drop current ■ High frequency operation ■ A(3) K A A Insulated package: – Insulation voltage 2000 V rms – Package capacitance = 12 pF


    Original     		PDF STPS20M100S STPS20M100SR O-220AB STPS20M100ST O-220AB, O-220FPAB, PS20M100SG

    STPS20M100ST

    Abstract: STPS20M100S PS20M100SR 624 Marking Code AN1768 AN2025
    Text: STPS20M100S Power Schottky rectifier Features A 1 • High current capability A(3) ■ Avalanche rated ■ Low forward voltage drop current ■ High frequency operation ■ K(2) K A A Insulated package: – Insulation voltage 2000 V rms – Package capacitance = 12 pF


    Original     		PDF STPS20M100S STPS20M100SR O-220AB STPS20M100ST O-220AB, O-220FPAB, STPS20M100ST STPS20M100S PS20M100SR 624 Marking Code AN1768 AN2025

    STPS15SM80CFP

    Abstract: No abstract text available
    Text: STPS15SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB


    Original     		PDF STPS15SM80C O-220FPAB STPS15SM80CG-TR STPS15SM80CR O-220AB, O220FPAB, STPS15SM80CFP

    C5075

    Abstract: STPS10M80CFP
    Text: STPS10M80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB


    Original     		PDF STPS10M80C O-220FPAB STPS10M80CG-TR STPS10M80CR O-220AB, O220FPAB, C5075 STPS10M80CFP

    STPS10SM80CFP

    Abstract: No abstract text available
    Text: STPS10SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB


    Original     		PDF STPS10SM80C O-220FPAB STPS10SM80CG-TR STPS10SM80CR O-220AB, O220FPAB, STPS10SM80CFP

    STGW19NC60HD

    Abstract: No abstract text available
    Text: STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD 19 A, 600 V, very fast IGBT with Ultrafast diode Features TAB TAB • Low on-voltage drop VCE(sat ■ Very soft Ultrafast recovery anti-parallel diode 3 3 1 Applications D²PAK ■ High frequency motor drives


    Original     		PDF STGB19NC60HDT4, STGF19NC60HD STGP19NC60HD, STGW19NC60HD O-220 O-247 O-220FP STGW19NC60HD

    STPS20SM80C

    Abstract: STPS20SM80CFP
    Text: STPS20SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB


    Original     		PDF STPS20SM80C O-220FPAB STPS20SM80CG-TR STPS20SM80CR O-220AB, O220FPAB, STPS20SM80C STPS20SM80CFP

    STMicroelectronics marking code

    Abstract: STPS20M80CFP
    Text: STPS20M80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB


    Original     		PDF STPS20M80C O-220FPAB STPS20M80CG-TR STPS20M80CR O-220AB, O220FPAB, STMicroelectronics marking code STPS20M80CFP

    Untitled

    Abstract: No abstract text available
    Text: STB230NH03L N-channel 30 V, 2.3 mΩ, 80 A D²PAK STripFET Power MOSFET Features Order code VDSS RDS on ID STB230NH03L 30V < 3mΩ 80A(1) ) s ( ct TAB 1. This value is limited by package • RDS(on) Qg industry’s benchmark ■ Conduction losses reduced


    Original     		PDF STB230NH03L

    Untitled

    Abstract: No abstract text available
    Text: STH360N4F6-2 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH360N4F6-2 40 V < 1.25 mΩ 180 A(1) TAB 1. Current limited by package • 2 Low gate charge


    Original     		PDF STH360N4F6-2 STH360N4F6-2 360N4F6

    10428

    Abstract: STB45NF06 mosfet DPAK
    Text: STB45NF06 N-channel 60 V, 0.22 Ω typ., 38 A STripFET II Power MOSFET in a D2PAK package Datasheet — production data Features Order code STB45NF06T4 • VDS RDS on max ID 60 V 0.028 Ω 38 A TAB Typical RDS(on) = 0.022 Ω ■ Exceptional dv/dt capability


    Original     		PDF STB45NF06 STB45NF06T4 10428 STB45NF06 mosfet DPAK

    STPS30SM80CFP

    Abstract: PS30SM80CFP PS30SM80CT
    Text: STPS30SM80C Power Schottky rectifier Features A1 K • High junction temperature capability ■ Optimized trade-off between leakage current and forward voltage drop ■ Low leakage current ■ Avalanche capability specified ■ Insulated package TO-220FPAB


    Original     		PDF STPS30SM80C O-220FPAB STPS30SM80CG-TR STPS30SM80CR O-220AB, O220FPAB, STPS30SM80CFP PS30SM80CFP PS30SM80CT

    Hitachi "J suffix"

    Abstract: 2SC2618RC
    Text: Shipping Container Specifications Shipping Container Form and Quantity Table 1 shows the availability of shipping container for the small signal transistors. Table 1 Package type Shipping container form TO-92 Radial taping Reel 2000 pcs TO-92MOD Radial taping


    OCR Scan     		PDF O-92MOD Hitachi "J suffix" 2SC2618RC