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    D 843 POWER TRANSISTOR Search Results

    D 843 POWER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 843 POWER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CR21-103J-T

    Abstract: TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803
    Text: DEMO MANUAL DC140 DESIGN-READY SWITCHERS LTC1436-PLL 2-Output Synchronous Buck Converter with Versatile Frequency Controller U DESCRIPTIO Demonstration circuit DC140 is a 2-output, general purpose evaluation platform intended to demonstrate the many functions of the LTC 1436-PLL and to make it easy


    Original     		DC140 LTC1436-PLL DC140 1436-PLL dc140f CR21-103J-T TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803 PDF

    NTE58

    Abstract: NTE59
    Text: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE58 NTE59 NTE58 NTE59 PDF

    63CV100BS

    Abstract: IPC-A-600E 63CV10 DC242 coiltron 2802S-02G2 TPSD107M010R0065 10BQ100 CTX200-4 LT1777
    Text: DEMO MANUAL DC242 DC/DC CONVERTER LT1777 High Voltage, Low Noise Step-Down DC/DC Converter U DESCRIPTIO Demonstration Circuit DC242 is a high input voltage, low noise step-down buck regulator using the LT 1777 switching regulator IC. Typical applications are automotive cellular and GPS receivers, low noise telecom and


    Original     		DC242 LT1777 DC242 700mA IPC-A-600E dc242f 63CV100BS IPC-A-600E 63CV10 coiltron 2802S-02G2 TPSD107M010R0065 10BQ100 CTX200-4 PDF

    p844m

    Abstract: p845 P843M MP844 D 843 Transistor "micro power systems" mp845 MP843 dual fet L6
    Text: aGE D • b 017 4 4.4 00033=10 5 I MICRO POWER SYSTEMS E /y i INC M P 843 MICRO POW ER SY ST EM S M P 844 M P 845 T'29'Z1 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL SILICON NITROX FIELD EFFECT TRANSISTORS DIFFUSED ISOLATED . en = 8nV/vr H T TYP.


    OCR Scan     		MP843 10MI1 100Hz, 500/l/A 500//A 500//A p844m p845 P843M MP844 D 843 Transistor "micro power systems" mp845 dual fet L6 PDF

    D 843 Transistor

    Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843
    Text: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V


    OCR Scan     		840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843 PDF

    D 843 Transistor

    Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
    Text: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842


    OCR Scan     		840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor 843FI e IRF 840 Application of irf840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840 PDF

    D 843 Transistor

    Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
    Text: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843


    OCR Scan     		840/FI-841 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv PDF

    D 843 Transistor

    Abstract: 843 transistor
    Text: Central CZT3120 Semiconductor Corp. SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a


    OCR Scan     		CZT3120 OT-223 CP312 14-November OT-223 D 843 Transistor 843 transistor PDF

    UFN841

    Abstract: UFN041 mosfet ir 840 features Hjc 22
    Text: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown


    OCR Scan     		T347Tb3 D01D7Ô UFN842 UFN843 UFN841 UFN041 mosfet ir 840 features Hjc 22 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk


    OCR Scan     		SMBTA13 SMBTA14 Q68000-A4331 Q68000-A4332 Q6800Q-A6475 Q68000-A6476 23b320 PDF

    f840

    Abstract: IRF842R
    Text: 3 H A R R IS IR F840/841/842/843 IRF840R/841R/842R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 7A and 8A, 450V - 500V TOP VIEW • rDs on) = 0 .8 5H and 1.1 fl DRAIN (FLANGE) • Single Pulse Avalanche Energy Rated*


    OCR Scan     		F840/841/8 IRF840R/841R/842R/843R IRF840, IRF841, IRF842, IRF843 IRF840R, IRF841R, IRF842R IRF843R f840 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2 S D 1 7 4 8 , 2SD1748, 2SD1748A 2 S D 1 7 4 8 A Package Dim ensions U n it ! mm Silicon NPN Triple-D iffused Planar D arlington Type 3.7m ax 7.3m ax. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B 1178A 3.2m ax. 0 .9 ± 0 . 1


    OCR Scan     		2SD1748, 2SD1748A 2SB1178, 2SB1748 2SB1748A 2SD1748 2SD1748A PDF

    Untitled

    Abstract: No abstract text available
    Text: 23633^ o d o ü 7 3 h *ì g 7 • BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m


    OCR Scan     		BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 PDF

    MJE370

    Abstract: MJE520
    Text: r ^ z 7 7 S G # S - T H O M S O MJE370 MJE520 N M ^ Q 0 !y = © r a © R l g S COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTION The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene­


    OCR Scan     		MJE370 MJE520 O-126 G-243S MJE370-MJE520 MJE370 MJE520 PDF

    2SD1762

    Abstract: No abstract text available
    Text: h ’7 > ' s Z . $ /Transistors 2SD1762 x t:$ *y T J l'7 °ls -+ -B N P N h7 > y*$ Epitaxial Planar NPN Silicon Transistor i& J ij& ll^ ^ llf f l /L o w F r e q . Power Amp. 2S D 17 6 2 • ^ J fiv H iE I/D im e n s io n s U n it: mm • 1) VcE(sat) V C E (s a t)= 0 .5 V (T y p .)


    OCR Scan     		2SD1762 2SB1185 2SB1185. 2SD1762 PDF

    irf 1962

    Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
    Text: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,


    OCR Scan     		IRF840 IRF841 IRF842 IRF843 irf 1962 irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843 PDF

    MAX843

    Abstract: No abstract text available
    Text: 19-0388; Rev 7 ; 3/96 JVW YXA JVX Low -Noise, R egulated, -2 V GaAsFET Bias F e a tu re s The M A X 8 40 /M A X 84 3/M A X 84 4 lo w -n o ise , in v e rtin g c h a rg e -p u m p p o w e r s u p p lie s are id e a l fo r b ia s in g GaAsFETs in cellular telephone transm itter am plifiers.


    OCR Scan     		MAX840) MAX840 AX843/M AX844 MAX840 MAX843/MAX844 840/M 843/M MAX843/MAX844 MAX843 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


    OCR Scan     		Q62702-C2254 OT-23 0535b05 PDF

    TIP11s

    Abstract: TIP116 TIP110 TIP111 TIP112 TIP115 TIP117 USA060
    Text: TIP115 TIP116 TIP117 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. N-P-N complements are


    OCR Scan     		TIP115 TIP116 TIP117 220AB TIP110, TIP111 TIP112. TIP116 TIP11s TIP110 TIP112 TIP117 USA060 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP115 TIP116 TIP117 _ V PHILIPS INTERNATIONAL SbE ]> • V _ 711DûEb OÜ43S5b 742 ■ PHIN SILICON DARLINGTON POWER TRANSISTORS r -3 3 - 3 P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		TIP115 TIP116 TIP117 43S5b O-220AB TIP112. TIP117 PDF

    2sb1748

    Abstract: 2sb174 2SB1178 2SB1178A 2SD1748 2SD1748A
    Text: 2SD1748, 2SD1748A Power Transistors 2SD 1748, 2SD 1748A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3 . 7m a x 7.3max. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B1178A 0.9 :0.1 0.5max. I 3. 2m ax . • Features


    OCR Scan     		2SD1748, 2SD1748A 2SB1178, 2SB1178A 2SB1748 2SD1748 IH-25 2sb174 2SB1178 2SB1178A 2SD1748A PDF

    Untitled

    Abstract: No abstract text available
    Text: T IP 1 1 5 T IP 1 1 6 J _ T IP 1 1 7 V . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. N-P-N complements are


    OCR Scan     		O-220AB TIP110, TIP111 TIP112. TIP115 TIP116 TIP117 7Z82564 PDF

    d844

    Abstract: Transistors BD 330
    Text: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D • 7110fl2b 00M303L. 34T « P H I N T-33-l T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and


    OCR Scan     		BD840 BD842 BD844 7110fl2b 00M303L. BD841 BD843. d844 Transistors BD 330 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 308 SIPMOS Power Transistor f • N channel • Enhancement mode • Avalanche-rated Type BUZ 308 ^DS 800 V ^DS on 4 Í2 2.6 A Package Ordering Code TO-218 AA C67078-S3109-A2 Maximum Ratings Parameter Symbol Continuous drain current Values


    OCR Scan     		O-218 C67078-S3109-A2 fl23Sbà O-218AA PDF