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    D 595 TRANSISTOR Search Results

    D 595 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 595 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFM9240

    Abstract: JANTX2N7237 JANTXV2N7237
    Text: PD - 90497E POWER MOSFET THRU-HOLE TO-254AA IRFM9240 JANTX2N7237 JANTXV2N7237 REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) I D IRFM9240 0.51Ω -11A HEXFET® MOSFET technology is the key to International


    Original     		PDF 90497E O-254AA) IRFM9240 JANTX2N7237 JANTXV2N7237 MIL-PRF-19500/595 IRFM9240 O-254AA. MIL-PRF-19500 JANTX2N7237 JANTXV2N7237

    IRFN9240

    Abstract: JANTX2N7237U JANTXV2N7237U
    Text: PD - 91554D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9240 JANTX2N7237U JANTXV2N7237U REF:MIL-PRF-19500/595 200V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9240 RDS(on) I D 0.51Ω -11A HEXFET® MOSFET technology is the key to International


    Original     		PDF 91554D IRFN9240 JANTX2N7237U JANTXV2N7237U MIL-PRF-19500/595 -150A/ -200V, IRFN9240 JANTX2N7237U JANTXV2N7237U

    IRFN9140

    Abstract: JANTX2N7236U JANTXV2N7236U
    Text: PD - 91553D POWER MOSFET SURFACE MOUNT SMD-1 IRFN9140 JANTX2N7236U JANTXV2N7236U REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFN9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International


    Original     		PDF 91553D IRFN9140 JANTX2N7236U JANTXV2N7236U MIL-PRF-19500/595 -100A/ -100V, IRFN9140 JANTX2N7236U JANTXV2N7236U

    IRFM9140

    Abstract: JANTX2N7236 JANTXV2N7236
    Text: PD - 90495E POWER MOSFET THRU-HOLE TO-254AA IRFM9140 JANTX2N7236 JANTXV2N7236 REF:MIL-PRF-19500/595 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFM9140 RDS(on) I D 0.20Ω -18A HEXFET® MOSFET technology is the key to International


    Original     		PDF 90495E O-254AA) IRFM9140 JANTX2N7236 JANTXV2N7236 MIL-PRF-19500/595 O-254AA. MIL-PRF-19500 IRFM9140 JANTX2N7236 JANTXV2N7236

    sot23 1303

    Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
    Text: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers


    Original     		PDF MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335

    TRANSISTOR K 1507

    Abstract: No abstract text available
    Text: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN


    Original     		PDF MA4T6310 OT-23 MA4T631039 OT-143 MA4T631039 TRANSISTOR K 1507

    MA4T636533

    Abstract: transistor sot-23 2613 MA4T6365
    Text: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    Original     		PDF MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613

    mount chip transistor 332

    Abstract: SOT-23 TRANSISTOR 548 MA4T64500
    Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available


    Original     		PDF MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


    Original     		PDF MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335

    MA4TF50

    Abstract: MA4TF5005 RS 434 071 x-band transistor transistor mesfet
    Text: General Purpose 0.5 µm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features ● ● ● ● ● Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description The MA4TF50 is an n-type GaAs depletion mode Metal


    Original     		PDF MA4TF50 MA4TF5005, MA4TF5000, MA4TF5005 MA4TF5005 RS 434 071 x-band transistor transistor mesfet

    Untitled

    Abstract: No abstract text available
    Text: 12-Bit, 41 MSPS Monolithic A/D Converter AD9042 ANALOG DEVICES FEATURES 41 MSPS Minimum Sample Rate 80 dB Spurious-Free Dynamic Range 595 mW Power Dissipation Single +5 V Supply On-Chip T/H and Reference Twos Complement Output Format CMOS-Compatible Output Levels


    OCR Scan     		PDF 12-Bit, AD9042 AD9042 12-bit AD9042AD 28-Pin DH-28)

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES 1 2-Bit, 41 MSPS Monolithic A/D Converter AD9042 FEATURES 41 MSPS Minimum Sample Rate 80 dB Spurious-Free Dynamic Range 595 mW Power Dissipation Single +5 V Supply On-Chip T/H and Reference Twos Complement Output Format CMOS-Compatible Output Levels


    OCR Scan     		PDF AD9042 AD9042 12-bit AD9042AST 44-Pin ST-44) AD9042AD

    9042AST

    Abstract: No abstract text available
    Text: 12-Bit, 41 WISPS Monolithic A/D Converter AD9042 ANALOG DEVICES F EA T U R ES 41 M S P S M inim um Sam ple Rate 80 dB Spurious-Free Dynam ic Range 595 m W Pow er D issipation Single +5 V Supply On-Chip T/H and Reference FUNCTIONAL BLOCK DIAGRAM A V CC DVCC


    OCR Scan     		PDF 12-Bit, AD9042 AD9042 12-bit AD904ZAST 44-Pin ST-44) AD9042AD 28-Pin 9042AST

    Untitled

    Abstract: No abstract text available
    Text: 8 -3 2 U N C-2A DIM MILLIMETER A 5.71 H 1 1.52 26.16 J K L .38R 19.05 o 9.52 DIA 0.13 1.78 4.06 15.11 2.92 LD B C D E F G TOL INCHES .13 .13 .02 .13 .13 MAX .38 .225 .375 DIA .005 .070 .165 .595 .115 .005 .005 .001 .005 .005 MAX .015 .13 .38 5' .060 1.030


    OCR Scan     		PDF 55GT8R

    21E sot

    Abstract: IC 3263 1303 SOT23
    Text: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


    OCR Scan     		PDF MA4T3243 MA4T324335 21E sot IC 3263 1303 SOT23

    2N6665

    Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
    Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


    OCR Scan     		PDF SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953

    MA42181-510

    Abstract: 2N5054 2N6665-509
    Text: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


    OCR Scan     		PDF MA4T3243 MA4T324335

    MA4T64500

    Abstract: No abstract text available
    Text: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels


    OCR Scan     		PDF MA4T645 MA4T645 MA4T64539 OT-143 MA4T64500

    MA4T636500

    Abstract: MA4T6365
    Text: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    OCR Scan     		PDF MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636500

    Untitled

    Abstract: No abstract text available
    Text: VMÂCQM Preliminary Specifications m an AM P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V1.A SOT-23 Features • • • • • 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel


    OCR Scan     		PDF MA4T6310 OT-23

    TRANSISTOR K 1507

    Abstract: No abstract text available
    Text: Preliminary Specifications an A M P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .00 Features • • • • • SOT-23 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel


    OCR Scan     		PDF MA4T6310 OT-23 TRANSISTOR K 1507

    Untitled

    Abstract: No abstract text available
    Text: MA4T243 Series M/A-COM Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor Operation to 8 GHz Available as Chip Available in Hermetic Surface Mount Packages


    OCR Scan     		PDF MA4T243 MA4T24300

    t636

    Abstract: 557 sot143 T636 A S 223 858 015 636
    Text: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    OCR Scan     		PDF MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636