cdi ignition
Abstract: MKP 338 2 X2 ENEC KP H 1000 pF axial R.46 MKP X2 MKP 1813 MKP 339 1 X1 MKP Y2/X1 mkp x2 enec MKP 339 1 capacitor r. 46 mkp x2
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . C apacit o rs S elect o r G ui d e Film capacitors 303 / 304 312 313 314 338 1 338 4 338 6 339 3 6 5 - 3 67 370 - 373 375 38 3 38 5 38 6 40 5 416 - 417 - 418 - 419 - 420 422 - 422 mini 467 - 46 8 - 46 9 471
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VMN-SG0042-0704
cdi ignition
MKP 338 2 X2 ENEC
KP H 1000 pF axial
R.46 MKP X2
MKP 1813
MKP 339 1 X1
MKP Y2/X1
mkp x2 enec
MKP 339 1 capacitor
r. 46 mkp x2
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bf417
Abstract: Bf 417 g transistor
Text: <^£.mL-dondu<itoi LPioaucti, L/nc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF415 *BF417 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL Compl. of BF 416 and BF 418
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BF415
BF417
JO-126-
CB-16
bf417
Bf 417 g transistor
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound
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FMMT415
FMMT417
AEC-Q101
J-STD-020
FMMT415-FMMT417
DS33084
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SD25-2R2
Abstract: BAT54S application note DFLS220L DN417 BAT54S LT1946 LT3489
Text: Drive Large TFT-LCD Displays with a Space-Saving Triple-Output Regulator – Design Note 417 Jesus Rosales Introduction The power appetite of large TFT-LCDs appears to be insatiable. Power supplies must feed increasing numbers of transistors and improved display resolutions, and do
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LT3489,
600mA
DFLS220L
LT3489
100nF
400mA
CDRH4D28-2R0
DN417
400mA
900mA
SD25-2R2
BAT54S application note
DFLS220L
BAT54S
LT1946
LT3489
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Untitled
Abstract: No abstract text available
Text: MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4126 Ideal for Medium Power Amplification and Switching Lead, Halogen and Antimony Free, RoHS Compliant
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MMBT4124
MMBT4126)
OT-23
J-STD-020D
MIL-STD-202,
DS30105
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marking code k1
Abstract: J-STD-020D MMBT4124 MMBT4124-7-F MMBT4126
Text: MMBT4124 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4126 Ideal for Medium Power Amplification and Switching
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MMBT4124
MMBT4126)
OT-23
J-STD-020D
MIL-STD-202,
DS30105
marking code k1
J-STD-020D
MMBT4124
MMBT4124-7-F
MMBT4126
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mmbt3904
Abstract: K1N TRANSISTOR marking code k1 complementary mmbt3904 MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 MMBT39047F k1n marking code
Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching
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MMBT3904
MMBT3906)
AEC-Q101
OT-23
J-STD-020D
DS30036
mmbt3904
K1N TRANSISTOR
marking code k1
complementary mmbt3904
MMBT3904-7
J-STD-020D
MMBT3904-7-F
MMBT3906
MMBT39047F
k1n marking code
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K1N TRANSISTOR
Abstract: marking code k1 MMBT3904 complementary mmbt3904 mmbt3904 complementary MMBT3904-7 J-STD-020D MMBT3904-7-F MMBT3906 transistor marking code
Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching
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MMBT3904
MMBT3906)
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
20orporated
DS30036
K1N TRANSISTOR
marking code k1
MMBT3904
complementary mmbt3904
mmbt3904 complementary
MMBT3904-7
J-STD-020D
MMBT3904-7-F
MMBT3906
transistor marking code
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UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets
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Untitled
Abstract: No abstract text available
Text: MMBF170 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)
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MMBF170
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ipc-SM-782
Abstract: BC847BLD BC847BLD-7
Text: BC847BLD Lead-free Green NEW PRODUCT SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • · · · · Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 2
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BC847BLD
OT-23
J-STD-020C
MIL-STD-202,
DS30824
ipc-SM-782
BC847BLD
BC847BLD-7
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marking code k1
Abstract: J-STD-020D MMBT4401 MMBT4401-7-F MMBT4403 k2x transistor surface mount
Text: MMBT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBT4403 Ideal for Medium Power Amplification and Switching
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MMBT4401
MMBT4403)
AEC-Q101
OT-23
J-STD-020D
DS30039
marking code k1
J-STD-020D
MMBT4401
MMBT4401-7-F
MMBT4403
k2x transistor surface mount
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Untitled
Abstract: No abstract text available
Text: BC847BLD SMALL SIGNAL NPN TRANSISTOR WITH CONTROLLED BASE-EMITTER VOLTAGE Features • • • • • • Low Deviation in Base-Emitter Voltage Surface Mount Package Ideally Suited for Automated Assembly Processes Lead Free by Design/RoHS Compliant Note 1
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BC847BLD
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS30824
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in
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QQ30bRQ
O220AB
BUK456-800A/B
BUK456
-800A
-800B
K456-800A
bbS3T31
0030b84
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BFT44
Abstract: BFT45
Text: N AM ER P H I L IP S /D IS C R E T E h ^Z ^ 3 3 *1 3 1 D Q Q S77SQ 417 APX BFT44 BFT45 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS Planar epitaxial transistors in TO-39 metal envelopes, intended as general purpose amplifiers and switching devices in industrial and telephone applications.
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bbS3131
QQS77SQ
BFT44
BFT45
BFT45
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honeywell memory sram
Abstract: 419B3E
Text: b3E D 4551072 DGQ1D3M 417 • H 0 N 3 Honeywell RICMOS SEA OF TRANSISTORS GATE ARRAY HR2210 FEATURES OTHER RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Si02 • Dose Rate Upset Hardness > 1x10° rad(Si)/sec • Dose Rate Survivability > 1x1012rad(Si)/sec
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HR2210
1x106
1x1012rad
1x101
honeywell memory sram
419B3E
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417 TRANSISTOR
Abstract: BF415 Bf 417 g transistor transistor 415 BF417 transistor 417 415 TRANSISTOR bf 415 J BF417 Bf 417
Text: BF415 *B F 417 NPN SILICON TRANSISTOR, E P IT A X IA L PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L Compì, o f BF 416 and BF 418 îfc Preferred device D isp o sitif recommandé Video o utput stages in T V sets Etages de sortie des amplificateurs
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BF415
O-126-
CB-16
417 TRANSISTOR
BF415
Bf 417 g transistor
transistor 415
BF417
transistor 417
415 TRANSISTOR
bf 415
J BF417
Bf 417
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BLY93C
Abstract: RF POWER TRANSISTOR NPN vhf 77530 capacitor
Text: 7 1 1 0 8 2 ti D 0 t.3 t.M7 417 « P H I N bSE D BLY93C P H IL I P S I N T E R N A T I O N A L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transm itters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is
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711082ti
BLY93C
59-j54
OT-120.
BLY93C
RF POWER TRANSISTOR NPN vhf
77530 capacitor
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TE 2241 motorola
Abstract: No abstract text available
Text: MOTORCLA SC XSTRS/R 1 5 E D § L3t,?2SM F M A X IM U M RATINGS Symbol Rating Value U nit Collector-Emitter Voltage VCEO 40 Vdc Emitter-Base Voltage Ve b o 4.0 Vdc ic 100 mAdc Symbol Max Unrt PD 225 mW 1.8 mWV°C R«j a 556 °C/W PD 300 mW 2.4 mWAC R«j a 417
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MMBTA20L
OT-23
O-236AB)
TE 2241 motorola
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Untitled
Abstract: No abstract text available
Text: 12E D I fc.3b?HS4 0005014 4 M A X I M U M R A T IN G S Value Unit VCEO 32 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage v EBO 5.0 Vdc 'c 800 mAdc Sym bol M ax Unit PD 225 mW 1.8 mW/°C Rö j a 556 °c /w Po 300 mW 2.4 mW/'C RejA 417 X /W Tj« Tstq
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BCW65AL
OT-23
O-236AB)
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diodes SY 200
Abstract: diode sy 526
Text: M A XIM U M RATINGS EA CH D IO DE Sy m b o l Value Reverse V oltage Vr 50 V dc Forw ard Current *F 200 m Adc *FM (surge) 500 m Adc Sy m b o l M ax Unit PD 225 mW 1.8 m W /T RtfJA 556 °c/w Pd 300 mW 2.4 m W /X RflJA 417 °C/W Tj< ^sta - 55 to + 1 50 DC Rating
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BAV74LT1
OT-23
O-236AB)
diodes SY 200
diode sy 526
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AVALANCHE TRANSISTOR
Abstract: FMMT417 FMMT415
Text: SOT23 NPN SILICON PLANAR AVALANCHE TRANSISTOR i S S U E 4 - O C T O B E R 1995 FMMT415 FMMT417 O FEATURES * Specifically de sign ed for A v a la n c h e m ode o peration * 60A Peak A va la n ch e Current Pulse w idth=20ns rC A P P L IC A T IO N S * Laser LED drivers
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FMMT415
FMMT417
AVALANCHE TRANSISTOR
FMMT417
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motorola cmos
Abstract: MC14575 MC14576 TV11 MC14577A mc14574 MC14576A MC14576AF MC14576AP MC14577AF
Text: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA MC14576A MC14577A Advance Information Dual Video Amplifiers CMOS Each of these devices contains two amplifiers realized in CMOS. Each amp also employs two lateral NPN bipolar transistors. The MC14576A contains two internally-compensated operational amplifiers.
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MC14576A
MC14577A
MC14573
MC14577A
MC14574
MC14578
MC14471
MC14575
motorola cmos
MC14575
MC14576
TV11
mc14574
MC14576AF
MC14576AP
MC14577AF
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B0415
Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2
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BD239
O-220
BD240
BD239A
BD240A
BD239B
BD240B
BD240
B0415
b0416
B0633
b0636
MH8106
B0635
BD415
BD416
BD417
b063
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