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    D 1879 TRANSISTOR Search Results

    D 1879 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    D 1879 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    capicitor

    Abstract: No abstract text available
    Text: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride


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    1877-GOLDMOS 1522-PTF capicitor PDF

    d 1879 TRANSISTOR

    Abstract: No abstract text available
    Text: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride


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    650mA 1877-GOLDMOS 1522-PTF d 1879 TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)


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    ITO-220 2SA1795 Fig79-3 2SA1876 2SC4978 ITO-220 PDF

    SM 4151

    Abstract: 2sc497
    Text: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo


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    ITO-220 2SA1795 2SC4668 P1880 2SC4978 Fig78-3 SM 4151 2sc497 PDF

    2sa1876

    Abstract: No abstract text available
    Text: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]


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    2SA1795 2SC4668 2SA1876 2SC4978 Fig79-3 PDF

    d 1879 TRANSISTOR

    Abstract: transistor C 2240
    Text: m æ* m RF Products m Microsemi 140 Commerce Drive M ontgom eryville, PA 18938-1013 Tel: 21S 631-3840 TCC2223-3 RF & MiCROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS -RE.QUENCY ¿ ,2 2.3GHz POWER OUT 3.0W POWER GAIN 8,5dB VOLTAGE 24.0V HERMETIC PACKAGE


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    TCC2223-3 TCC2S23-3 15-OOOpF S00/16 d 1879 TRANSISTOR transistor C 2240 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


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    PTFB183408SV PTFB183408SV 340-watt PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


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    PTFB183408SV PTFB183408SV 340-watt PDF

    transistor wu1

    Abstract: NS-1186 spx 1404 UNO32 4 pin 433 mhz rf module TM 1628 driver display HD404868 HD404878 HD404889 HD404899
    Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit ADE-202-075D O Rev. 5.0 Feb. 2000 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,


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    HD404889/HD404899/HD404878/ HD404868 ADE-202-075D HD404889, HD404899, HD404878 transistor wu1 NS-1186 spx 1404 UNO32 4 pin 433 mhz rf module TM 1628 driver display HD404889 HD404899 PDF

    NS-1186

    Abstract: HD404868 HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899 MX-38T Si3239
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    TO-92variant

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)


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    OT54variant O-92variant) O-220AB) OT96-1 OT137-1 T0-220 OT186A O-220) OT223 OT226 TO-92variant PDF

    br a1273 transistor

    Abstract: No abstract text available
    Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit ADE-202-075C O Rev. 4.0 Dec. 1999 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,


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    HD404889/HD404899/HD404878/ HD404868 ADE-202-075C HD404889, HD404899, HD404878 br a1273 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 D3ST00 bOb M A P X Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 N AflER PHILIPS/DISCRETE FEATURES b?E D PINNING PIN • Low cost • High power gain. DESCRIPTION Code: V30 1 base DESCRIPTION


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    bb53T31 D3ST00 PMBTH10 PMBTH10 PMBTH81. dissipation1986 bbS3S31 MRA166 MRA167 PDF

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


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    PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170 PDF

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


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    PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 PDF

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


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    PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131 PDF

    HD404878

    Abstract: HD404889 HD404899 HD4074869 HD4074889 HD4074899 HD404868 Nippon capacitors
    Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit REJ03B0051-0600H Rev. 6.00 Sep.08.2003 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,


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    HD404889/HD404899/HD404878/ HD404868 REJ03B0051-0600H HD404889, HD404899, HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899 Nippon capacitors PDF

    SGSP256

    Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
    Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


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    SGSP154 SGSP254/255/258 SGSP354/355/356 50V/400V SGSP254 SGSP354 OT-82 O-220 SGSP155 SGSP256 SGSP356 SP156 PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS Peripherals CDP1879, CDP1879C-1 CMOS Real-Time Clock IN T - Features • C P U in te rfa c e fo r use w ith g e n e ra l-p u rp o s e m ic ro p ro c e s s o rs • Tim e o f d a y /c a le n d a r ■ Reads se co n d s, m inu te s, h o u rs ■ Reads d a y o f m o n th a n d m o n th


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    CDP1879, CDP1879C-1 1879C PDF

    2SC1871

    Abstract: n 1895 1878 TRANSISTOR 2SA893
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    frc-25 2SC1871 n 1895 1878 TRANSISTOR 2SA893 PDF

    Si3239

    Abstract: 24-segment transistor wu1 HD404868 HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    power supply ic 1507

    Abstract: tdso 1163 2199 MCU transistors ai 757 smd ED8A transistor wu1 HD404868 HD404878 HD404889 HD404899
    Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit REJ03B0051-0600H Rev. 6.00 Sep.08.2003 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,


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    HD404889/HD404899/HD404878/ HD404868 REJ03B0051-0600H HD404889, HD404899, HD404878 power supply ic 1507 tdso 1163 2199 MCU transistors ai 757 smd ED8A transistor wu1 HD404889 HD404899 PDF

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


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    2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760 PDF

    d 1879 TRANSISTOR

    Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and


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    PTFA181001E PTFA181001F PTFA181001E PTFA181001F 100-watt H-36248-2 H-37248-2 d 1879 TRANSISTOR elna 50v LM7805 05 BCP56 LM7805 LM7805 voltage regulator packages 1844 MAGNETICS PDF