capicitor
Abstract: No abstract text available
Text: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride
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1877-GOLDMOS
1522-PTF
capicitor
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d 1879 TRANSISTOR
Abstract: No abstract text available
Text: PTF 10153 60 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10153 is an internally matched 60–watt GOLDMOS FET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It operates with 40% efficiency and 11.5 dB minimum gain. Nitride
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650mA
1877-GOLDMOS
1522-PTF
d 1879 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)
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ITO-220
2SA1795
Fig79-3
2SA1876
2SC4978
ITO-220
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SM 4151
Abstract: 2sc497
Text: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo
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ITO-220
2SA1795
2SC4668
P1880
2SC4978
Fig78-3
SM 4151
2sc497
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PDF
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2sa1876
Abstract: No abstract text available
Text: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]
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2SA1795
2SC4668
2SA1876
2SC4978
Fig79-3
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PDF
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d 1879 TRANSISTOR
Abstract: transistor C 2240
Text: m æ* m RF Products m Microsemi 140 Commerce Drive M ontgom eryville, PA 18938-1013 Tel: 21S 631-3840 TCC2223-3 RF & MiCROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS -RE.QUENCY ¿ ,2 2.3GHz POWER OUT 3.0W POWER GAIN 8,5dB VOLTAGE 24.0V HERMETIC PACKAGE
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TCC2223-3
TCC2S23-3
15-OOOpF
S00/16
d 1879 TRANSISTOR
transistor C 2240
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB183408SV
PTFB183408SV
340-watt
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183408SV
PTFB183408SV
340-watt
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transistor wu1
Abstract: NS-1186 spx 1404 UNO32 4 pin 433 mhz rf module TM 1628 driver display HD404868 HD404878 HD404889 HD404899
Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit ADE-202-075D O Rev. 5.0 Feb. 2000 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,
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HD404889/HD404899/HD404878/
HD404868
ADE-202-075D
HD404889,
HD404899,
HD404878
transistor wu1
NS-1186
spx 1404
UNO32
4 pin 433 mhz rf module
TM 1628 driver display
HD404889
HD404899
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PDF
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NS-1186
Abstract: HD404868 HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899 MX-38T Si3239
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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TO-92variant
Abstract: No abstract text available
Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)
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OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
T0-220
OT186A
O-220)
OT223
OT226
TO-92variant
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br a1273 transistor
Abstract: No abstract text available
Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit ADE-202-075C O Rev. 4.0 Dec. 1999 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,
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HD404889/HD404899/HD404878/
HD404868
ADE-202-075C
HD404889,
HD404899,
HD404878
br a1273 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: bb53T31 □D3ST00 bOb M A P X Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 N AflER PHILIPS/DISCRETE FEATURES b?E D PINNING PIN • Low cost • High power gain. DESCRIPTION Code: V30 1 base DESCRIPTION
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bb53T31
D3ST00
PMBTH10
PMBTH10
PMBTH81.
dissipation1986
bbS3S31
MRA166
MRA167
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PDF
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TL172
Abstract: TL170
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications
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PTFB183404E
PTFB183404F
PTFB183404E
PTFB183404F
340-watt
H-37275-6/2
TL172
TL170
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TL139
Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
H-37275-6/2
TL139
PTFB183404
PTFB183404EF
TL148
TRANSISTOR tl131
TL162
TL170
tl172
c105 TRANSISTOR
TL145
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PDF
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TL139
Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB183404E
PTFB183404F
PTFB183404F
340-watt
H-36275-8
H-37275-6/2
TL139
TL205
PTFB183404
transistor TL131
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PDF
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HD404878
Abstract: HD404889 HD404899 HD4074869 HD4074889 HD4074899 HD404868 Nippon capacitors
Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit REJ03B0051-0600H Rev. 6.00 Sep.08.2003 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,
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Original
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HD404889/HD404899/HD404878/
HD404868
REJ03B0051-0600H
HD404889,
HD404899,
HD404878
HD404889
HD404899
HD4074869
HD4074889
HD4074899
Nippon capacitors
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PDF
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SGSP256
Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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SGSP154
SGSP254/255/258
SGSP354/355/356
50V/400V
SGSP254
SGSP354
OT-82
O-220
SGSP155
SGSP256
SGSP356
SP156
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PDF
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Untitled
Abstract: No abstract text available
Text: CMOS Peripherals CDP1879, CDP1879C-1 CMOS Real-Time Clock IN T - Features • C P U in te rfa c e fo r use w ith g e n e ra l-p u rp o s e m ic ro p ro c e s s o rs • Tim e o f d a y /c a le n d a r ■ Reads se co n d s, m inu te s, h o u rs ■ Reads d a y o f m o n th a n d m o n th
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CDP1879,
CDP1879C-1
1879C
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PDF
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2SC1871
Abstract: n 1895 1878 TRANSISTOR 2SA893
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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frc-25
2SC1871
n 1895
1878 TRANSISTOR
2SA893
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PDF
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Si3239
Abstract: 24-segment transistor wu1 HD404868 HD404878 HD404889 HD404899 HD4074869 HD4074889 HD4074899
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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power supply ic 1507
Abstract: tdso 1163 2199 MCU transistors ai 757 smd ED8A transistor wu1 HD404868 HD404878 HD404889 HD404899
Text: HD404889/HD404899/HD404878/ HD404868 Series Low-Voltage AS Microcomputers with On-Chip LCD Circuit REJ03B0051-0600H Rev. 6.00 Sep.08.2003 Description The HD404889, HD404899, and HD404868 Series comprise low-voltage, 4-bit single-chip microcomputers with a variety of on-chip supporting functions that include an LCD circuit, A/D converter,
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Original
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HD404889/HD404899/HD404878/
HD404868
REJ03B0051-0600H
HD404889,
HD404899,
HD404878
power supply ic 1507
tdso 1163
2199 MCU
transistors ai 757
smd ED8A
transistor wu1
HD404889
HD404899
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PDF
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QPL-19500
Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits
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2N6903
2N6903
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
QPL-19500
2n6901
2N6758 JANTX
2N6903 JANTX
2N6898 JANTX
2N6898
2N6756
2N6758
2N6760
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PDF
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d 1879 TRANSISTOR
Abstract: elna 50v LM7805 05 BCP56 LM7805 PTFA181001E PTFA181001F LM7805 voltage regulator packages 1844 MAGNETICS
Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and
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PTFA181001E
PTFA181001F
PTFA181001E
PTFA181001F
100-watt
H-36248-2
H-37248-2
d 1879 TRANSISTOR
elna 50v
LM7805 05
BCP56
LM7805
LM7805 voltage regulator packages
1844 MAGNETICS
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PDF
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