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    D 161 TRANSISTOR Search Results

    D 161 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 161 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BC160

    Abstract: BC160-10 BC160-6 BC161-6 BC160-16 BC161 BC161-10 BC161-16
    Text: BC160, 161 PNP Medium Power Transistors Features: • PNP Silicon Power Switching Transistors. • Medium Power Amplifier and Switching Applications. TO-39 Metal Can Package Dimension Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88


    Original     		PDF BC160, BC160 BC161 BC160 BC160-10 BC160-6 BC161-6 BC160-16 BC161 BC161-10 BC161-16

    BAAW

    Abstract: EL5192 EL5193 EL5193A EL5293 EL5393
    Text: NS ESIG3 D W 6 R N E EL5 1 D FOEL5162/ E D MEN 161, COM160/EL5 E R N O T E E E L5 Data Sheet S Single 300MHz Current Feedback Amplifier with Enable EL5193, EL5193A May 16, 2007 FN7182.4 Features • 300MHz -3dB bandwidth The EL5193 and EL5193A are current feedback amplifiers


    Original     		PDF 62/EL L5160/E 300MHz EL5193, EL5193A FN7182 EL5193 EL5193A 300MHz. BAAW EL5192 EL5293 EL5393

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


    Original     		PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    ZTX618

    Abstract: ZTX718 DSA003771
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX618 THERMAL CHARACTERISTICS PARAMETER SYMBOL Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Rth j-amb 1 Rth(j-amb)2 † MAX. UNIT 175 116 °C/W °C/W 180 160 D=1(D.C.) t1 120 100 tP D=t1


    Original     		PDF ZTX618 ZTX718 1995Telephone: ZTX618 ZTX718 DSA003771

    MRF6522-10

    Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496
    Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 MRF6522-10 MRF6522-10R1 10R1 Ni200 mosfet 4496

    ZTX968

    Abstract: DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX968 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL MIN. TYP. Static Forward Current Transfer Ratio hFE 300 300 200 150 450 450 300 240 50 Transition Frequency fT 80 Output Capacitance


    Original     		PDF ZTX968 -10mA, -500mA, -400mA 400mA, -100mA, 50MHz 100ms ZTX968 DSA003780

    j608

    Abstract: 10R1 MRF6522-10R1
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 MRF6522-10R1 j608 10R1 MRF6522-10R1

    j608

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522 j608

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the


    Original     		PDF MRF6522â MRF6522-10R1

    TRANSISTOR BC 157

    Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
    Text: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


    OCR Scan     		PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor

    transistor BC 157

    Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
    Text: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as


    OCR Scan     		PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10

    BC 160

    Abstract: transistor bc icbo nA npn BC141 BC161 BC Transistors
    Text: BC 160 BC 161 SILICON PLANAR NPN GENERAL PURPOSE TRANSISTORS T he BC 160 and B C 161 a re s ilic o n p la n a r e p ita x ia l PNP tra n s is to rs in T O -3 9 m étal case. T h e y are p a rtic u la rly d e s ig n e d fo r a u d io a m p lifie rs a nd s w itc h in g a p p lic a tio n s


    OCR Scan     		PDF BC161 BC141. BC 160 transistor bc icbo nA npn BC141 BC Transistors

    esm118

    Abstract: ESM117 esm 117 DARLINGTON ESM 30 Darlington npn boitier to3 CM1111
    Text: ESM 117 ESM 118 NPN SILICON DARLING TON TRANSISTORS, E P ITA XIAL BASE TRANSISTORS D ARLING TON NPN SILIC IU M , BASE EPITAXIEE Compì, o f ESM 161, ESM 162 PRE LIM IN A R Y D ATA NOTICE P R E LIM IN AIR E M onolithic construction Construction monolithique


    OCR Scan     		PDF CB-19 ESM117 esm118 ESM117 esm 117 DARLINGTON ESM 30 Darlington npn boitier to3 CM1111

    D1615

    Abstract: No abstract text available
    Text: SILICON TRANSISTORS 2 S D 1 6 1 5 ,2 S D 1 6 1 5A NPN SILICON EPITAXIAL TRANSISTORS POWER M IN I MOLD DESCRIPTION 2S D1615, 161 5A are designed fo r audio freq uency pow er a m p lifie r and sw itching app lica tion, especially in H y b rid Integrated C ircuits.


    OCR Scan     		PDF 2SD1615, 2SD1615A D1615, D1615

    ESM117

    Abstract: ESM162 max-h21E ESM16 esm 117 esm 906 data
    Text: ESM 161 ESM162 PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS PNP D ARLIN G TO N SILIC IU M , BASE EPITAXIEE Compl. ESM 117, 118 P R E L IM IN A R Y D A TA N OTICE PR EL IM IN A IRE Monolithic construction Construction m onolithique


    OCR Scan     		PDF ESM162 CB-19 ESM117 ESM162 max-h21E ESM16 esm 117 esm 906 data

    Untitled

    Abstract: No abstract text available
    Text: KENNEDY fl S CORP M ^K M.S. KENNEDY CORP. b 3E D 5134300 00001Ö2 HIGH POWER AMPLIFIER b34 • HSK 161 8170 Thompson Road • Cicero, N.Y. 13039 (315) 699-9201 FEATURES: • • • • • • High Output Current Wide Supply Range Low Cost Class “C” Output Stage


    OCR Scan     		PDF MSK-161 MSK-161B Mil-H-38534

    TL602

    Abstract: TL604 tl6041 TL6011 D2161 TL604M TL601 TL601M TL607 TL607M
    Text: TL601, TL604, TL607, TL610 P-MOS ANALOG SWITCHES D 2 161, JUNE 1 9 7 6 — REVISED OCTOBER 1986 • Switch ± 10-V Analog Signals • TTL Logic Capability • 5- to 30-V Supply Ranges • Low 100 il On-State Resistance JG O R P PA C K A G E IT O P V IE W )


    OCR Scan     		PDF TL601, TL604, TL607, TL610 D2161, TL610 TL602 TL604 tl6041 TL6011 D2161 TL604M TL601 TL601M TL607 TL607M

    BC160 MOTOROLA

    Abstract: No abstract text available
    Text: MO TG R C L A SC XSTRS/R F 15E D I fc>3fc.72S4 Gaat.Mt.2 2 I BC160, -6, -10, -16 BC161, -6, -10, -16 M A X IM U M RATINGS Sym bol BC 160 BC 161 U nit Collector-Emitter Voltage VC EO 40 60 Vdc C ollector-Base Voltage VCBO 40 60 Vdc Em itter-Base Voltage VEBO


    OCR Scan     		PDF BC160, BC161, AdeC160, BC161 BC160 MOTOROLA

    AD161

    Abstract: ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7
    Text: AD 161 G E R M A N I U M ~ NF N - NF - L E I S T U N G S T R A N S I S T O R f/Ir Ends t u f e n , Mechanische mit A D 162 als k o m p l e m e n t S r e s Daten: Gehffuse: Metall 9 A 2 n ach D I N 41 max. 8,9 10,3 *Q6 875 * D e r K o l l e k t o r ist mit


    OCR Scan     		PDF max-19 AD161 ad 161 AD162 Valvo Aa valvo transistoren valvo ad 162 AD-161 lastwiderstand-zulassig ScansUX7

    BC160

    Abstract: bc 160 BC161 TFK BC TFK 175 TFK 236 bc 141
    Text: ip ^ B C 160- BC 161 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: NF-Verstärker und Schalter Applications: AF am plifiers and switches Besondere Merkmale: Features: • Verlustleistung 3,2 W • Power dissipation 3.2 W


    OCR Scan     		PDF

    bc 141

    Abstract: BC160
    Text: BC 160 BC 161 SI LI CON PLANAR NPN GENERAL PURPOSE TRANSISTORS The BC160 and BC 161 are silico n planar epitaxial PNP transistors in TO -39 metal case. They are p a rticularly designed fo r audio am p lifie rs and sw itching applications up to 1 A. The com plem entary NPN types are the BC 140 and EIC141.


    OCR Scan     		PDF BC160 bc 141

    ericsson 10007

    Abstract: c 2575 gs
    Text: ERICSSON ^ PTF 10007 35 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The PTF 10007 is a com mon source n-channel enhancement-mode lateral MOSFET intended for large signal am plifier applications to 1.0 GHz. It is rated at 35 w atts minimum output power. Nitride surface


    OCR Scan     		PDF ate-Sou05 ericsson 10007 c 2575 gs

    Untitled

    Abstract: No abstract text available
    Text: rZ Z SGS-THOMSON Ä T # M a r n ie r a * ® BC160 BC161 GENERAL PURPOSE TRANSISTORS D E S C R IP T IO N The BC160, and BC161 are silicon planar epitaxial PNP transistors in TO-39 metal case.They are par­ ticu la rly designed foraudio amplifiers and switching


    OCR Scan     		PDF BC160 BC161 BC160, BC161 BC140 BC141.

    NEC 41-A 002

    Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
    Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for


    OCR Scan     		PDF b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353