Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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CYTY108A
CYTY108A
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: Technologies GmbH & Co. KG CYTY108A InSb HALL-EFFECT ELEMENT Hall-effect element CYTY108A is made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall-effect principle. It can convert a magnetic flux density signal linearly into voltage
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Original
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PDF
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CYTY108A
CYTY108A
40DERING
10sec
300g/30sec
200pF,
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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Original
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PDF
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CYTY108A,
CYTY320,
CYTY300B-CS)
CYTY211)
D-85464
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Untitled
Abstract: No abstract text available
Text: ChenYang Technologies GmbH & Co. KG CYTY SERIES InSb HALL-EFFECT ELEMENTS CYTY series Hall-effect elements are made of compound semiconductor material indium stibnite (InSb), which utilizes the Hall Effect principle. It can convert a magnetic flux density signal linearly into
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Original
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PDF
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RanCYTY108A,
CYTY320,
CYTY108A,
CYTY300B-CS)
CYTY211)
D-85464
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