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    Untitled

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG CYSJ119 GaAs HALL-EFFECT ELEMENTS CYSJ series Hall-effect element is an ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal


    Original     		CYSJ119 100mA D-85464 PDF

    Untitled

    Abstract: No abstract text available
    Text: ChenYang Technologies GmbH & Co. KG GaAs HALL EFFECT ELEMENTS CYSJ series Hall-effect element is a ion-implanted magnetic field sensor made of mono-crystal gallium arsenide GaAs semiconductor material group Ⅲ-V using ion-implanted technology. It can convert a magnetic flux density signal


    Original     		D-85464 CYSJ411 OT-143) CYSJ422 OT-143-1) CYSJ119 PDF