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    CY7C1315BV18 Search Results

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    CY7C1315BV18 Price and Stock

    Rochester Electronics LLC CY7C1315BV18-200BZXC

    IC SRAM 18MBIT PARALLEL 165FBGA
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    DigiKey CY7C1315BV18-200BZXC Tray 554 9
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    Infineon Technologies AG CY7C1315BV18-167BZC

    IC SRAM 18MBIT PAR 165FBGA
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    DigiKey CY7C1315BV18-167BZC Tray 136
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    Infineon Technologies AG CY7C1315BV18-250BZC

    IC SRAM 18MBIT PAR 165FBGA
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    DigiKey CY7C1315BV18-250BZC Tray 136
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    Infineon Technologies AG CY7C1315BV18-200BZC

    IC SRAM 18MBIT PARALLEL 165FBGA
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    DigiKey CY7C1315BV18-200BZC Tray 136
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    Infineon Technologies AG CY7C1315BV18-200BZI

    IC SRAM 18MBIT PARALLEL 165FBGA
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    CY7C1315BV18 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C1315BV18 Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture Original PDF
    CY7C1315BV18-167BZC Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture Original PDF
    CY7C1315BV18-167BZC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 167MHZ 165FBGA Original PDF
    CY7C1315BV18-167BZCT Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture Original PDF
    CY7C1315BV18-167BZCT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 167MHZ 165FBGA Original PDF
    CY7C1315BV18-167BZXC Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture Original PDF
    CY7C1315BV18-200BZC Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture Original PDF
    CY7C1315BV18-200BZC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA Original PDF
    CY7C1315BV18-200BZI Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Original PDF
    CY7C1315BV18-200BZI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA Original PDF
    CY7C1315BV18-200BZXC Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture Original PDF
    CY7C1315BV18-200BZXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA Original PDF
    CY7C1315BV18-200BZXI Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Original PDF
    CY7C1315BV18-200BZXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA Original PDF
    CY7C1315BV18-250BZC Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture Original PDF
    CY7C1315BV18-250BZC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 250MHZ 165FBGA Original PDF
    CY7C1315BV18-250BZXC Cypress Semiconductor 18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Original PDF
    CY7C1315BV18-250BZXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 250MHZ 165FBGA Original PDF

    CY7C1315BV18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1311BV18

    Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
    Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth


    Original
    PDF CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture 18-Mbit QDR™-II SRAM 4-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions


    Original
    PDF CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit CY7C1911BV18, CY7C1315BV18

    CY7C1311BV18

    Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
    Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth


    Original
    PDF CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18

    Untitled

    Abstract: No abstract text available
    Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth


    Original
    PDF CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz 600MHz) SelecCY7C1911BV18 278-MHz

    CY7C1311BV18

    Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
    Text: CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz clock for high bandwidth


    Original
    PDF CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18

    CY7C1911BV18

    Abstract: CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1313
    Text: CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz clock for high bandwidth


    Original
    PDF CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit CY7C1911BV18 CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1313

    Untitled

    Abstract: No abstract text available
    Text: CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 PRELIMINARY 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth


    Original
    PDF CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz 600MHz) CY7C1911BV18 BB165E BB165D

    CY7C1311BV18

    Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
    Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 PRELIMINARY 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 250-MHz clock for high bandwidth


    Original
    PDF CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 250-MHz CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18

    Xilinx spartan xc3s400_ft256

    Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
    Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,


    Original
    PDF UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256

    CY7C1338-100AXC

    Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
    Text: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12


    Original
    PDF CY7C1019BV33-15VC GS71108AJ-12 CY7C1019BV33-15VXC GS71108AGJ-12 CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12 CY7C1019CV33-10VC GS71108AJ-10 CY7C1338-100AXC gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC

    CQ 419

    Abstract: cq 529 electronic component cq 529 transistor cq 449 ep2s90f1020c3 EP2S90F1020 transistor cq 529 EP1S60 EP2S15 SRAM controller
    Text: Interfacing QDRII & QDRII+ SRAM with Stratix II, Stratix & Stratix GX Devices Application Note 326 April 2006, ver. 4.0 Introduction Synchronous static RAM SRAM architectures support the high throughput requirements of communications, networking, and digital


    Original
    PDF

    CY7C1313AV18-250BZC

    Abstract: EP1S60 EP2S60F1020C5ES F1020 v32-88
    Text: Interfacing QDRII+ & QDRII with Stratix II, Stratix II GX, Stratix, & Stratix GX Devices Application Note 326 May 2008, ver. 5.1 Introduction Synchronous static RAM SRAM architectures support the high throughput requirements of communications, networking, and digital


    Original
    PDF