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    CY7C1041B Price and Stock

    Rochester Electronics LLC CY7C1041BV33-12VC

    IC SRAM 4MBIT PARALLEL 44SOJ
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    DigiKey CY7C1041BV33-12VC Bulk 11,962 58
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    Rochester Electronics LLC CY7C1041BV33-20ZI

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1041BV33-20ZI Bulk 10,920 27
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    Rochester Electronics LLC CY7C1041BV33-15VC

    IC SRAM 4MBIT PARALLEL 44SOJ
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    DigiKey CY7C1041BV33-15VC Tube 5,037 61
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    Rochester Electronics LLC CY7C1041BV33-15VCT

    IC SRAM 4MBIT PARALLEL 44SOJ
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    DigiKey CY7C1041BV33-15VCT Bulk 5,000 61
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    Rochester Electronics LLC CY7C1041BV33-15ZCT

    IC SRAM 4MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1041BV33-15ZCT Bulk 2,000 58
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    CY7C1041B Datasheets (90)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C1041B Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY7C1041B-12VC Cypress Semiconductor 256K x 16 static RAM, 12ns Original PDF
    CY7C1041B-12VXC Cypress Semiconductor 256K x 16 Static RAM Original PDF
    CY7C1041B-12ZC Cypress Semiconductor 256K x 16 static RAM, 12ns Original PDF
    CY7C1041B-12ZI Cirrus Logic SRAM Chip, 256K x 16 Static RAM Original PDF
    CY7C1041B-15VC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 15NS 44SOJ Original PDF
    CY7C1041B-15VC Cypress Semiconductor 256K x 16 static RAM, 15ns Original PDF
    CY7C1041B-15VI Cypress Semiconductor 256K x 16 static RAM, 15ns Original PDF
    CY7C1041B-15ZC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 15NS 44TSOP Original PDF
    CY7C1041B-15ZC Cypress Semiconductor 256K x 16 static RAM, 15ns Original PDF
    CY7C1041B-15ZI Cypress Semiconductor 256K x 16 static RAM, 15ns Original PDF
    CY7C1041B-15ZXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 4MBIT 15NS 44TSOP Original PDF
    CY7C1041B-17VC Cypress Semiconductor 256K x 16 static RAM, 17ns Original PDF
    CY7C1041B-17VI Cypress Semiconductor 256K x 16 static RAM, 17ns Original PDF
    CY7C1041B-17ZC Cypress Semiconductor 256K x 16 static RAM, 17ns Original PDF
    CY7C1041B-17ZI Cypress Semiconductor 256K x 16 static RAM, 17ns Original PDF
    CY7C1041B-20VC Cypress Semiconductor 256K x 16 static RAM, 20ns Original PDF
    CY7C1041B-20VI Cypress Semiconductor 256K x 16 static RAM, 20ns Original PDF
    CY7C1041B-20ZC Cypress Semiconductor 256K x 16 static RAM, 20ns Original PDF
    CY7C1041B-20ZI Cypress Semiconductor 256K x 16 static RAM, 20ns Original PDF

    CY7C1041B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY7C1041BV33

    Abstract: CY7C1041BV33-15ZC
    Text: 041BV33 CY7C1041BV33 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).


    Original     		PDF 041BV33 CY7C1041BV33 I/O15) CY7C1041BV33 CY7C1041BV33-15ZC

    Untitled

    Abstract: No abstract text available
    Text:  CY7C1041BN 256 K x 16 Static RAM Features Functional Description • Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ tAA = 15 ns ■ Low active power ❐ 1540 mW max.


    Original     		PDF CY7C1041BN CY7C1041BN I/O15)

    CY7C1041BN

    Abstract: CY7C1041BN-15ZXI CY7C1041BNL-15ZXC
    Text: CY7C1041BN 256K x 16 Static RAM Features Functional Description • Temperature Ranges — Commercial: 0°C to 70°C The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C


    Original     		PDF CY7C1041BN CY7C1041BN I/O15) CY7C1041BNL-20VXCT CY7C1041BN-15ZXI CY7C1041BNL-15ZXC

    1041C 8 pin

    Abstract: CY7C1041CV33-10BAI 1041C CY7C1041BV33 CY7C1041CV33
    Text: CY7C1041CV33 256K x 16 Static RAM Features Byte HIGH Enable BHE is LOW, then data from I/O pins (I/O8 – I/O15) is written into the location specified on the address pins (A0 – A17). • Pin equivalent to CY7C1041BV33 • High speed — tAA = 10 ns • Low active power


    Original     		PDF CY7C1041CV33 I/O15) CY7C1041BV33 CY7C1041CV33 CY7C1042CV33 1041C 8 pin CY7C1041CV33-10BAI 1041C CY7C1041BV33

    7C1041

    Abstract: CY7C1041B 1041B-3 1041B-6
    Text: CY7C1041B 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O15) is written into the location specified on the address pins (A0 through A17).


    Original     		PDF CY7C1041B I/O15) 7C1041 CY7C1041B 1041B-3 1041B-6

    CY7C1041BN15VI

    Abstract: No abstract text available
    Text: CY7C1041BN 256K x 16 Static RAM Features Functional Description • High speed The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. — tAA = 15 ns • Low active power — 1540 mW max. • Low CMOS standby power (L version)


    Original     		PDF CY7C1041BN CY7C1041BN CY7C1041BN15VI

    TR93

    Abstract: No abstract text available
    Text: CY7C1041BNV33 CY7C1041BNV33 256K x 16 Static RAM Features Functional Description • High speed The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. — tAA = 12 ns • Low active power — 612 mW max. • Low CMOS standby power


    Original     		PDF 1CY7C1041BNV33 CY7C1041BNV33 CY7C1041BNV33 TR93

    10-ZS

    Abstract: No abstract text available
    Text: CY7C1041D 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin-and function-compatible with CY7C1041B The CY7C1041D is a high-performance CMOS static RAM organized as 256K words by 16 bits. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable


    Original     		PDF CY7C1041D CY7C1041B 44-Lead 400-Mil) 44-Pin CY7C1041D 10-ZS

    CY7C1041BV33

    Abstract: CY7C1041BV33-12ZC CY7C1041BV33-15ZC 25-ZI
    Text: 041BV33 CY7C1041BV33 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).


    Original     		PDF 041BV33 CY7C1041BV33 I/O15) CY7C1041BV33 CY7C1041BV33-12ZC CY7C1041BV33-15ZC 25-ZI

    CY7C1041B-15ZXI

    Abstract: CY7C1041B TSOP Type II cy7c1041b-15vxi CY7C1041B-15ZXC CY7C1041B15ZXI CY7C1041B-15VXC
    Text: CY7C1041B 256K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O0 through I/O7), is written into the location specified on the address pins (A0 through A17). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location


    Original     		PDF CY7C1041B I/O15) I/O15nents CY7C1041B CY7C1041B-15ZXI TSOP Type II cy7c1041b-15vxi CY7C1041B-15ZXC CY7C1041B15ZXI CY7C1041B-15VXC

    Untitled

    Abstract: No abstract text available
    Text: CY7C1041CV33 256K x 16 Static RAM Features HIGH Enable BHE is LOW, then data from I/O pins (I/O8–I/O15) is written into the location specified on the address pins (A0–A17). • Pin equivalent to CY7C1041BV33 • High speed — tAA = 10 ns • Low active power


    Original     		PDF CY7C1041CV33 I/O15) CY7C1041BV33 CY7C1041CV33 CY7C1042CV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1041BN 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • Temperature range: ❐ Commercial: 0 °C to 70 °C ❐ Automotive-A: –40 °C to 85 °C ■ High speed ❐ tAA = 15 ns ■ Low active power ❐ 1540 mW max. ■


    Original     		PDF CY7C1041BN 44-pin 44-pin 400-Mil)

    CY7C1041BV33-15ZC

    Abstract: CY7C1041BV33
    Text: 33 CY7C1041BV33 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O15) is written into the location specified on the address pins (A0 through A17).


    Original     		PDF CY7C1041BV33 I/O15) CY7C1041BV33-15ZC CY7C1041BV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1041BNV33 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. ■ Low active power ❐ 612 mW max.


    Original     		PDF CY7C1041BNV33 CY7C1041BNV33 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1041BNV33 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. ■ Low active power ❐ 612 mW max.


    Original     		PDF CY7C1041BNV33 CY7C1041BNV33 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable


    Original     		PDF CY7C1041CV33 CY7C1041BV33 CY7C1041CV33

    Untitled

    Abstract: No abstract text available
    Text: 33 CY7C1041BV33 PRELIMINARY 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O15) is written into the location specified on the address pins (A0 through A17).


    Original     		PDF CY7C1041BV33 I/O15)

    CY7C1041B-12ZC

    Abstract: CY7C1041B-15VC CY7C1041B
    Text: CY7C1041B CY7C1041B 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O8 through I/O15) is written into the location specified on the address pins (A0 through A17).


    Original     		PDF 1CY7C1041B CY7C1041B I/O15) CY7C1041B-12ZC CY7C1041B-15VC CY7C1041B

    CY7C1041BV33

    Abstract: CY7C1041CV33 CY7C1041CV33-10BAC
    Text: CY7C1041CV33 256K x 16 Static RAM Features HIGH Enable BHE is LOW, then data from I/O pins (I/O8–I/O15) is written into the location specified on the address pins (A0–A17). • Pin equivalent to CY7C1041BV33 • High speed — tAA = 10 ns • Low active power


    Original     		PDF CY7C1041CV33 I/O15) CY7C1041BV33 CY7C1041CV33 CY7C1042CV33 20-ns CY7C1041BV33 CY7C1041CV33-10BAC

    CY7C1041BV33

    Abstract: CY7C1041CV33 CY7C1041CV33-12VXI CY7C1041CV33-20ZXC CY7C1042CV33
    Text: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable


    Original     		PDF CY7C1041CV33 CY7C1041BV33 CY7C1041CV33 I/O15) 125et CY7C1041BV33 CY7C1041CV33-12VXI CY7C1041CV33-20ZXC CY7C1042CV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1041BN 256K x 16 Static RAM Features Functional Description • Temperature Ranges — Commercial: 0°C to 70°C The CY7C1041BN is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. — Industrial: –40°C to 85°C — Automotive-A: –40°C to 85°C


    Original     		PDF CY7C1041BN 44-pin 44-pin 400-Mil) CY7C1041BN

    CY7C1041BV33

    Abstract: CY7C1046BV33 CY7C1049BV33
    Text: Cypress Semiconductor Product Qualification Report QTP# 000305 VERSION 1.0 March, 2000 4 Meg Asynchronous SRAM R52D-3 Technology at Fab 4 CY7C1041BV33 256K x 16 Static RAM CY7C1046BV33 1M x 4 Static RAM CY7C1049BV33 512K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA:


    Original     		PDF R52D-3 CY7C1041BV33 CY7C1046BV33 CY7C1049BV33 CY7C1041BV33/CY7C1046BV33/CY7C1049BV33 CY7C1049BV33 R52-3D CY7C1049B-----------------------STRESS: CY7C1329-AC CY7C1041BV33 CY7C1046BV33

    CY7C1041BNV33

    Abstract: CY7C1041BNV33L-12VXC CY7C1041BNV33L-12ZXC
    Text: CY7C1041BNV33 256 K x 16 Static RAM 256 K × 16 Static RAM Features Functional Description • High speed ❐ tAA = 12 ns The CY7C1041BNV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. ■ Low active power ❐ 612 mW max.


    Original     		PDF CY7C1041BNV33 CY7C1041BNV33 I/O15) CY7C1041BNV33L-12VXC CY7C1041BNV33L-12ZXC

    CY7C1041CV33-12ZXC

    Abstract: CY7C1041CV33-15ZXC CY7C1041CV33-15ZXI Application of Z44 CY7C1041CV33-10BAI CY7C1041BV33 CY7C1041CV33 TSOP 48 thermal resistance junction to case CY7C1041CV33-12ZXI CY7C1041CV33-15VC
    Text: CY7C1041CV33 4-Mbit 256K x 16 Static RAM Functional Description[1] Features • Pin equivalent to CY7C1041BV33 The CY7C1041CV33 is a high-performance CMOS Static RAM organized as 262,144 words by 16 bits. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable


    Original     		PDF CY7C1041CV33 CY7C1041BV33 CY7C1041CV33 I/O15) CY7C1042CV33 20-ns CY7C1041CV33-12ZXC CY7C1041CV33-15ZXC CY7C1041CV33-15ZXI Application of Z44 CY7C1041CV33-10BAI CY7C1041BV33 TSOP 48 thermal resistance junction to case CY7C1041CV33-12ZXI CY7C1041CV33-15VC