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    CY7C1021B Price and Stock

    Rochester Electronics LLC CY7C1021B-15ZC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021B-15ZC Bag 6,867 152
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    Rochester Electronics LLC CY7C1021BN-15ZXC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021BN-15ZXC Tube 4,517 148
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    Rochester Electronics LLC CY7C1021BL-15ZC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021BL-15ZC Bulk 3,797 226
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    Rochester Electronics LLC CY7C1021BV33-10ZC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021BV33-10ZC Bag 1,874 193
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    Rochester Electronics LLC CY7C1021BL-15ZI

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    DigiKey CY7C1021BL-15ZI Bulk 1,372 155
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    CY7C1021B Datasheets (144)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY7C1021B Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021B Cypress Semiconductor 64K x 16 Static RAM Original PDF
    CY7C1021B Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021B-12VC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021B-12VC Cypress Semiconductor 64K x 16 Static RAM, 5V, 12ns Original PDF
    CY7C1021B-12VI Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021B-12VI Cypress Semiconductor 64K x 16 Static RAM, 5V, 12ns Original PDF
    CY7C1021B-12VXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44SOJ Original PDF
    CY7C1021B-12VXCT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44SOJ Original PDF
    CY7C1021B-12VXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44SOJ Original PDF
    CY7C1021B-12VXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44SOJ Original PDF
    CY7C1021B-12ZC Cypress Semiconductor 64K x 16 Static RAM, 5V, 12ns Original PDF
    CY7C1021B-12ZC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021B-12ZI Cypress Semiconductor 64K x 16 Static RAM, 5V, 12ns Original PDF
    CY7C1021B-12ZXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44TSOP Original PDF
    CY7C1021B-12ZXCT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44TSOP Original PDF
    CY7C1021B-15VC Cypress Semiconductor 64K x 16 Static RAM, 5V, 15ns Original PDF
    CY7C1021B-15VC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021B-15VE Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021B-15VI Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    ...

    CY7C1021B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		PDF CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball

    CY7C1021BN-15VI

    Abstract: CY7C1021BN
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN-15VI CY7C1021BN

    CY7C1021BN

    Abstract: No abstract text available
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021D PRELIMINARY 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1021B • High speed — tAA = 10 ns • CMOS for optimum speed/power


    Original     		PDF CY7C1021D CY7C1021B 44-pin 400-mil CY7C1021D

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021D 1-Mbit 64K x 16 Static RAM Features • Pin-and function-compatible with CY7C1021B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • • • — ISB2 = 3 mA 2.0V Data Retention Automatic power-down when deselected


    Original     		PDF CY7C1021D CY7C1021B 44-pin 400-Mil 83MHz, 66MHz 40MHz

    CY7C1021BN

    Abstract: No abstract text available
    Text: CY7C1021BN, CY7C10211BN 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C


    Original     		PDF CY7C1021BN, CY7C10211BN CY7C1021BN/CY7C10211BN CY7C1021BN

    CY7C1021BV

    Abstract: CY7C1021BV33
    Text: CY7C1021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF 1CY7C1021BV33 CY7C1021BV33 I/O16) CY7C1021BV CY7C1021BV33

    CY7C1021BNV33

    Abstract: CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		PDF CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI

    CY7C1021B-15ZSXE

    Abstract: CY7C1021B-12ZXC CY7C1021B
    Text: CY7C1021B 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable


    Original     		PDF CY7C1021B I/O16) CY7C10211B CY7C1021B-15ZSXE CY7C1021B-12ZXC CY7C1021B

    CY7C1021BV33

    Abstract: CY7C1021CV33
    Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected


    Original     		PDF CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33 CY7C1021BV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021D 1-Mbit 64K x 16 Static RAM Features Functional Description • Temperature Ranges: ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C ■ Pin and Function Compatible with CY7C1021B ■ High Speed


    Original     		PDF CY7C1021D CY7C1021D

    15BAI

    Abstract: No abstract text available
    Text: 33 CY7C1021BV33 PRELIMINARY 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O 1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BV33 44-pin 400-mil 48-Ball 15BAI

    CY7C1021D-10ZSXI

    Abstract: CY7C1021B CY7C1021D CY7C1021D-10VXI
    Text: CY7C1021D 1-Mbit 64K x 16 Static RAM Functional Description [1] Features • Pin-and function-compatible with CY7C1021B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns The CY7C1021D is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an


    Original     		PDF CY7C1021D CY7C1021B CY7C1021D 44-pin 400-Mil 83MHz, 66MHz 40MHz 100MHz, CY7C1021D-10ZSXI CY7C1021B CY7C1021D-10VXI

    AN1064

    Abstract: CY7C1021B CY7C1021D
    Text: CY7C1021D 1-Mbit 64K x 16 Static RAM Features Functional Description • Temperature Ranges: ❐ Industrial: –40°C to 85°C ❐ Automotive-A: –40°C to 85°C ❐ Automotive-E: –40°C to 125°C ■ Pin and Function Compatible with CY7C1021B ■ High Speed


    Original     		PDF CY7C1021D CY7C1021B CY7C1021D AN1064 CY7C1021B

    CY7C10211B

    Abstract: CY7C1021B
    Text: CY7C1021B CY7C10211B 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021B CY7C10211B I/O16) CY7C1021B/CY7C10211B CY7C10211B CY7C1021B

    CY7C1021B

    Abstract: CY7C1021B-10VC
    Text: CY7C1021B CY7C1021B 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0 through A15). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9 through I/O16) is written into the location


    Original     		PDF 1CY7C1021B CY7C1021B I/O16) 44-pin 400-mil CY7C1021B CY7C1021B-10VC

    CY7C1021CV33-10ZC

    Abstract: No abstract text available
    Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected


    Original     		PDF CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33 CY7C1021CV33-10ZC

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021CV33 64K x 16 Static RAM Features • Pin- and function-compatible with CY7C1021BV33 • High speed — tAA = 8, 10, 12, and 15 ns • CMOS for optimum speed/power • Low active power — 360 mW max. • Data retention at 2.0V • Automatic power-down when deselected


    Original     		PDF CY7C1021CV33 CY7C1021BV33 44-pin 400-mil 48-ball CY7C1021CV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021BN/10211BN is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly


    Original     		PDF CY7C1021BN CY7C10211BN 44-pin 400-mil CY7C1021BN/10211BN CY7C1021BN/CY7C10211BN

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BN/CY7C10211BN 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C


    Original     		PDF CY7C1021BN/CY7C10211BN CY7C1021BN/CY7C10211BN

    CY7C1021BV33

    Abstract: No abstract text available
    Text: 021BV33 CY7C1021BV33 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF 021BV33 CY7C1021BV33 I/O16) CY7C1021BV33

    CY7C1021B-12ZXC

    Abstract: CY7C10211B CY7C1021B CY7C1021B-12VXI
    Text: CY7C1021B CY7C10211B 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021B CY7C10211B I/O16) CY7C1021B/CY7C10211B CY7C1021B-12ZXC CY7C10211B CY7C1021B CY7C1021B-12VXI

    CY7C1021BV33

    Abstract: No abstract text available
    Text: 021BV33 CY7C1021BV33 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF 021BV33 CY7C1021BV33 I/O16) CY7C1021BV33

    CY7C1021B-12ZXC

    Abstract: CY7C1021B
    Text: CY7C1021B 1-Mbit 64K x 16 Static RAM Features automatic power-down feature that significantly reduces power consumption when deselected. • Temperature Ranges Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable


    Original     		PDF CY7C1021B I/O16) CY7C10211B CY7C1021B-12ZXC CY7C1021B