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    Infineon Technologies AG CY7C1012DV33-10BGXIT

    IC SRAM 12MBIT PARALLEL 119PBGA
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    CY7C1012DV33 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1012DV33 Cypress Semiconductor 12-Mbit (512K x 24) Static RAM Original PDF
    CY7C1012DV33-10BGXI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 12MBIT 10NS 119BGA Original PDF
    CY7C1012DV33-10BGXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 12MBIT 10NS 119BGA Original PDF
    CY7C1012DV33-8BGXC Cypress Semiconductor 12-Mbit (512K x 24) Static RAM Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Functional Description Features The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).


    Original
    PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16â I/O23.

    CY7C1012DV33

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Functional Description Features • High speed ❐ tAA = 8 ns ■ Low active power ❐ ICC = 225 mA at 8 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention


    Original
    PDF CY7C1012DV33 12-Mbit 119-Ball CY7C1012DV33

    CY7C1012DV33-10BGXI

    Abstract: SRAM TTL
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM 12-Mbit (512 K × 24) Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately


    Original
    PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23. CY7C1012DV33-10BGXI SRAM TTL

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012DV33 PRELIMINARY 12-Mbit 512K X 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed reduces power Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write


    Original
    PDF CY7C1012DV33 12-Mbit 119-ball

    CY7C1012DV33

    Abstract: No abstract text available
    Text: CY7C1012DV33 PRELIMINARY 12-Mbit 512K X 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed reduces power Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write


    Original
    PDF CY7C1012DV33 12-Mbit 119-ball CY7C1012DV33

    CY7C1012DV33

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at 10 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately


    Original
    PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23.

    CY7C1012DV33

    Abstract: No abstract text available
    Text: CY7C1012DV33 PRELIMINARY 12-Mbit 512K X 24 Static RAM Features power-down feature that significantly consumption when deselected. • High speed reduces power Writing the data bytes into the SRAM is accomplished when the chip select controlling that byte is LOW and the write


    Original
    PDF CY7C1012DV33 12-Mbit CY7C1012DV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512 K x 24 Static RAM Features Functional Description • High speed ❐ tAA = 10 ns The CY7C1012DV33 is a high performance CMOS static RAM organized as 512K words by 24 bits. Each data byte is separately controlled by the individual chip selects (CE1, CE2, and CE3).


    Original
    PDF CY7C1012DV33 12-Mbit CY7C1012DV33 I/O15, I/O16 I/O23.

    Untitled

    Abstract: No abstract text available
    Text: CY7C1012DV33 12-Mbit 512K X 24 Static RAM Functional Description Features • High speed ❐ tAA = 8 ns ■ Low active power ❐ ICC = 225 mA at 8 ns ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3V ■ 2.0V data retention


    Original
    PDF CY7C1012DV33 12-Mbit CY7C1012DV33