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    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B195 CY7B196 CY7B194, 7B195,

    b1944

    Abstract: CY7B194 CY7B195 CY7B196 7B194 7B195 B194-4
    Text: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — t.4A = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B194, CY7B195, b1944 7B194 7B195 B194-4

    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — tM = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • O utput enable OE feature (CY7B195 and CY7B196 only)


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B195 CY7B196 0015Bâ

    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed - 12 ns U* The CY7B194, 7B195. and CY7B196 are high-performance BiCMOS static RAMs organized as 65,536 words by 4 bits. Easy


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B196 CY7B196. Y7B196-20DM CY7B196-20LMB

    b1944

    Abstract: a223c 7B19S-12 10DC IR 3 PINS
    Text: CY7B194 CY7B195 PRELIM INARY CY7B196 = = = = ^ - • -65,536 x 4 Static R/W RAM ~ CYPRESS SEMICONDUCTOR Features Functional Description • H ig h sp eed T he CY7B194, 7B195, and CY 7B196 are high-perform ance BiC M O S static RAM s organized as 65,536 w ords by 4 bits. Easy


    OCR Scan     		PDF CY7B195 CY7BI96 CY7B194 CY7B196 CY7B196. b1944 a223c 7B19S-12 10DC IR 3 PINS

    Untitled

    Abstract: No abstract text available
    Text: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — 1 \ \ = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)


    OCR Scan     		PDF CY7B194 CY7B195 CY7B196 CY7B196 300-Mil) 28-Lead

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A