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    CY62127 Price and Stock

    Flip Electronics CY62127DV30LL-55BVXI

    IC SRAM 1MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62127DV30LL-55BVXI Tray 69,287 400
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    Rochester Electronics LLC CY62127DV30LL-70ZI

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62127DV30LL-70ZI Bulk 5,625 207
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    Rochester Electronics LLC CY62127DV30LL-70BVI

    IC SRAM 1MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62127DV30LL-70BVI Bulk 2,645 281
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    Rochester Electronics LLC CY62127DV30LL-55BVI

    IC SRAM 1MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62127DV30LL-55BVI Bulk 1,713 168
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    Rochester Electronics LLC CY62127BVLL-70BKI

    SRAM 1 MEG (64K X 16-BIT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62127BVLL-70BKI Bulk 221
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    Find more CY62127 price and stock on Findchips.com

    CY62127 Datasheets (118)

    Part ECAD Model Manufacturer Description Curated Type PDF
    CY62127BV Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62127BVLL-55BAI Cypress Semiconductor 64k x 16 Static RAM Original PDF
    CY62127BVLL-55BAI Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 3.3V Supply, Industrial, FBGA, 48-Pin Original PDF
    CY62127BVLL-55BAIT Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 3.3V Supply, Industrial, FBGA, 48-Pin Original PDF
    CY62127BVLL-55ZI Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 3.3V Supply, Industrial, TSOP II, 44-Pin Original PDF
    CY62127BVLL-55ZI Cypress Semiconductor 64k x 16 Static RAM Original PDF
    CY62127BVLL-55ZIT Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, TSOP II, 44-Pin Original PDF
    CY62127BVLL-70BAI Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 3.3V Supply, Industrial, FBGA, 48-Pin Original PDF
    CY62127BVLL-70BAI Cypress Semiconductor 64k x 16 Static RAM Original PDF
    CY62127BVLL-70BAIT Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, VFBGA, 44-Pin Original PDF
    CY62127BVLL-70BKI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62127BVLL-70BKI Cypress Semiconductor Original PDF
    CY62127BVLL-70BVI Cypress Semiconductor Original PDF
    CY62127BVLL-70ZI Cypress Semiconductor 64k x 16 Static RAM Original PDF
    CY62127DV18 Cypress Semiconductor 1-Mb (64K x 16) Static RAM Original PDF
    CY62127DV18L-55BVI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF
    CY62127DV18L-55ZI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF
    CY62127DV18LL-55BVI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF
    CY62127DV18LL-55ZI Cypress Semiconductor 1M (64k x 16) Static RAM Original PDF
    CY62127DV20 Cypress Semiconductor 1M (64K x 16) Static RAM Original PDF

    CY62127 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62127DV18

    Abstract: No abstract text available
    Text: CY62127DV18 MoBL2 ADVANCE INFORMATION 1M 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 1.95V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 2.5 mA @ f = fMAX • Ultra-low standby power


    Original     		PDF CY62127DV18 48-ball 44-pin CY62127DV18

    CY62127BV

    Abstract: CY62127BVLL-55ZI
    Text: CY62127BV MoBL 1M 64K x 16 Static RAM Features significantly reduces power consumption when addresses are not toggling, or when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE


    Original     		PDF CY62127BV I/O15) CY62127BVLL-55ZI

    Untitled

    Abstract: No abstract text available
    Text: CY62127DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62127BV Ultra-low active power — Typical active current: 0.85 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		PDF CY62127DV30 CY62127BV 48-ball 44-lead 70-ns

    Untitled

    Abstract: No abstract text available
    Text: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM CY62127DV30 MoBL® 1-Mbit (64 K × 16) Static RAM Features • Temperature ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62127BV


    Original     		PDF CY62127DV30 CY62127DV30 CY62127BV 48-ball 44-pin

    CY62127BV

    Abstract: CY62127DV30 CY62127DV30L CY62127DV30LL
    Text: CY62127DV30 CY62127DV30 MOBL R 1MB (64K X 16) STATIC RAM portable applications such as cellular telephones. The device Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V


    Original     		PDF CY62127DV30 CY62127DV30 CY62127BV 48-ball 44-lead CY62127BV CY62127DV30L CY62127DV30LL

    CY62127DV20

    Abstract: No abstract text available
    Text: CY62127DV20 MoBL2 ADVANCE INFORMATION 1M 64K x 16 Static RAM Features • Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX


    Original     		PDF CY62127DV20 48-ball 44-pin CY62127DV20

    Untitled

    Abstract: No abstract text available
    Text: CY62127DV30 MoBL 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 and 70 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62127BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		PDF CY62127DV30 CY62127BV 48-ball 44-lead CY62127DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The


    Original     		PDF CY62127DV30 I/O15)

    Untitled

    Abstract: No abstract text available
    Text: CY62127DV30 MoBL 1-Mb 64K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62127BV • Ultra-low active power


    Original     		PDF CY62127DV30 CY62127BV 48-ball 44-lead 56-pin

    Untitled

    Abstract: No abstract text available
    Text: 27DV30 ADVANCE INFORMATION CY62127DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • High speed: 55 ns Wide voltage range: 2.2V–3.6V Pin Compatible with CY62127BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1MHz


    Original     		PDF 27DV30 CY62127DV30 CY62127BV 44-lead 48-ball

    CY62127BV

    Abstract: No abstract text available
    Text: CY62127BV 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 54 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected


    Original     		PDF CY62127BV 44-pin CY62127BV

    Untitled

    Abstract: No abstract text available
    Text: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM CY62127DV30 MoBL® 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The


    Original     		PDF CY62127DV30 zebraCY62127DV30 CY62127BV 48-ball 44-pin

    CY62127BV

    Abstract: CY62127DV30 CY62127DV30L CY62127DV30LL
    Text: CY62127DV30 MoBL 1 Mb 64K x 16 Static RAM Features • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62127BV • Ultra-low active power — Typical active current: 0.85 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		PDF CY62127DV30 CY62127BV 48-ball 44-lead 44-lead CY62127DV30 70-ns 45-ns CY62127BV CY62127DV30L CY62127DV30LL

    CY62127BV

    Abstract: CY62127DV30 CY62127DV30L CY62127DV30LL
    Text: CY62127DV30 1-Mb 64K x 16 Static RAM Features • Temperature Ranges — Industrial: –40°C to 85°C — Automotive: –40°C to 125°C • Very high speed: 45 ns • Wide voltage range: 2.2V to 3.6V • Pin compatible with CY62127BV • Ultra-low active power


    Original     		PDF CY62127DV30 CY62127BV 48-ball 44-lead CY62127DV30 cuZ44 56-pin CY62127BV CY62127DV30L CY62127DV30LL

    CY62127DV18

    Abstract: No abstract text available
    Text: CY62127DV18 MoBL2 PRELIMINARY 1 Mb 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX • Ultra-low standby power


    Original     		PDF CY62127DV18 48-ball 44-lead CY62127DV18

    L0820

    Abstract: CY62127BV CY62127DV30 CY62127DV30LL
    Text: CY62127DV30 MoBL 1-Mbit 64 K x 16 Static RAM CY62127DV30 MoBL® 1-Mbit (64 K × 16) Static RAM Features • Temperature ranges ❐ Industrial: –40 °C to 85 °C ■ Very high speed: 55 ns ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62127BV


    Original     		PDF CY62127DV30 zebraCY62127DV30 CY62127BV I/O15) L0820 CY62127BV CY62127DV30 CY62127DV30LL

    CY62127DV20

    Abstract: No abstract text available
    Text: CY62127DV20 MoBL2 ADVANCE INFORMATION 1M 64K x 16 Static RAM Features • Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX


    Original     		PDF CY62127DV20 48-ball 44-pin CY62127DV20

    CY62127BV

    Abstract: CY62127BVLL-55ZI
    Text: CY62127BV MoBL 1M 64K x 16 Static RAM Features significantly reduces power consumption when addresses are not toggling, or when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE


    Original     		PDF CY62127BV I/O15) CY62127BVLL-55ZI

    CY62127DV18

    Abstract: No abstract text available
    Text: CY62127DV18 MoBL2 PRELIMINARY 1 Mb 64K x 16 Static RAM Features • Very high speed: 55 ns • Voltage range: 1.65V to 2.2V • Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 3.75 mA @ f = fMAX • Ultra-low standby power


    Original     		PDF CY62127DV18 48-ball 44-lead CY62127DV18

    Untitled

    Abstract: No abstract text available
    Text: CY62127DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62127BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		PDF CY62127DV30 CY62127BV 48-ball 44-lead CY62127DV30

    A12C

    Abstract: A14C A15C CY62127V
    Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF CY62127V 44-pin CY62127V A12C A14C A15C

    A12C

    Abstract: A14C A15C CY62127V
    Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF CY62127V 44-pin A12C A14C A15C

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1099 CY62127V PRELIMINARY ¿up P Y P R F ^ R \œt*> J : JT J» l i j f e s J t s J 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is


    OCR Scan     		PDF CY62127V

    Untitled

    Abstract: No abstract text available
    Text: fax id: 1099 CY62127V PRELIMINARY 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (Aq


    OCR Scan     		PDF CY62127V 44-pin