POWER BJTs
Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor
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AN1540/D
AN1540
AN1540/D*
POWER BJTs
AN1540
IXYS SCR Gate Drive
vertical pnp bjt
failure analysis IGBT
Drive Base BJT
Nippon capacitors
IGBT tail time
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igbts
Abstract: local lifetime mitsubishi igbt cm
Text: 3DJHRI AN INVESTIGATION OF TURN-OFF PERFORMANCE OF PLANAR AND TRENCH GATE IGBTS UNDER SOFT AND HARD SWITCHING Hideo Iwamoto*, Hisao Kondo*, Satoshi Mori*, John F. Donlon*, and Akira Kawakami* *Mitsubishi Electric Corporation, Power Device Division, Fukuoka, Japan
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0-7803-6404-X/00/
igbts
local lifetime
mitsubishi igbt cm
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static characteristics of mosfet and igbt
Abstract: IGBT tail time 2A mosfet igbt driver stage mosfet, igbt, transistor Semiconductor Group igbt driver igbt SIEMENS SIEMENS thyristor main disadvantages of mosfet comparison of IGBT and MOSFET transistor igbt
Text: Conductivity-Modulated FETs-IGBT Up to a reverse voltage of VDS ≤ 200 V, power MOSFETs are superior in all respects to any other switching devices components. With a supply voltage of VB > 200 V, the bipolar transistor has a lower saturation voltage VCE sat ≤ VDSon and is cheaper. In comparison with a
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IGBT tail time
Abstract: igbt simulation NATIONAL IGBT local lifetime IGBT cross IGBT PNP Semiconductor Group igbt mitsubishi igbt cm
Text: 168 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, VOL. 38, NO. 1, JANUARY/FEBRUARY 2002 A New Punch-Through IGBT Having a New n-Buffer Layer Hideo Iwamoto, Hideki Haruguchi, Yoshifumi Tomomatsu, John F. Donlon, Senior Member, IEEE, and Eric R. Motto, Member, IEEE
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200-V
IGBT tail time
igbt simulation
NATIONAL IGBT
local lifetime
IGBT cross
IGBT PNP
Semiconductor Group igbt
mitsubishi igbt cm
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CMI-12024SI
Abstract: No abstract text available
Text: Preliminary COMPOSITE MODULES INCORPORATED Single N-Channel IGBT In A Hermetic TO-258 Package CMI-12024SI Features: u u u u u u SMALL CASE SIZE HIGH INPUT IMPEDANCE HERMETIC PACKAGE LOW Vsat FAST SWITCHING AVAILABLE WITH FREE WHEELING DIODE u ISOLATED PACKAGE
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O-258
CMI-12024SI
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2A mosfet igbt driver stage
Abstract: igbt qualification circuit S-IGBT igbt 600V IGBT 600V 16 siemens igbt UPS SIEMENS zvs flyback driver BUP410 SGP06N60
Text: TECHNOLOGY A MOSFET alternative for switching frequencies up to more than 300 kHz High-speed 600V IGBT in NPT technology Because of its many advantages over PT technology, NPT technology has gained increasing acceptance for IGBTs with breakdown voltages of over 1 kV. Siemens is now continuing this logical progression with
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00V-NPT-IGBT,
2A mosfet igbt driver stage
igbt qualification circuit
S-IGBT
igbt 600V
IGBT 600V 16
siemens igbt
UPS SIEMENS
zvs flyback driver
BUP410
SGP06N60
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22a ic
Abstract: IRGPH30S
Text: Preliminary Data Sheet PD - 9.1139 IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 13A
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IRGPH30S
400Hz)
O-247AC
22a ic
IRGPH30S
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
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igbt 20A 1200v
Abstract: TRANSISTOR BIPOLAR 400V 20A IRGPH40S
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz
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IRGPH40S
400Hz)
O-247AC
igbt 20A 1200v
TRANSISTOR BIPOLAR 400V 20A
IRGPH40S
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IGBT 500V 35A
Abstract: 600v 30a IGBT what is fast IGBT transistor APT0408 APT5014B2LL IGBT tail time MOSFET 1200v 30a snubber circuit Current tail time of IGBT dodge IGBT structure
Text: Technology to the Next Power Application Note APT0408 IGBT Technical Overview Distinguishing Features Application Tips Jonathan Dodge, P.E. Applications Engineering Manager Advanced Power Technology 29 November 2004 TECHNOLOGY TO THE NEXT POWER 1 What is an IGBT?
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APT0408
IGBT 500V 35A
600v 30a IGBT
what is fast IGBT transistor
APT0408
APT5014B2LL
IGBT tail time
MOSFET 1200v 30a snubber circuit
Current tail time of IGBT
dodge
IGBT structure
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IRGPH40M
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1029A IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPH40M
10kHz)
device890
IRGPH40M
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c313 TRANSISTOR DATA
Abstract: C-313 D-12 IRGBC40M
Text: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses
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IRGBC40M
10kHz)
O-220AB
C-314
c313 TRANSISTOR DATA
C-313
D-12
IRGBC40M
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TRANSISTOR BIPOLAR 400V 20A
Abstract: igbt 20A 1200v IRGPH40S igbt 1200V 20A
Text: Preliminary Data Sheet PD - 9.1085 IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Features Standard Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz VCES = 1200V VCE(sat) ≤ 3.0V G @VGE = 15V, IC = 20A
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IRGPH40S
400Hz)
O-247AC
TRANSISTOR BIPOLAR 400V 20A
igbt 20A 1200v
IRGPH40S
igbt 1200V 20A
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c313 TRANSISTOR DATA
Abstract: c313 transistor same C313 MOSFET 40A 600V C-313 D-12 IRGBC40M
Text: Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC40M
10kHz)
O-220AB
C-314
c313 TRANSISTOR DATA
c313 transistor same
C313
MOSFET 40A 600V
C-313
D-12
IRGBC40M
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c313 TRANSISTOR DATA
Abstract: C-313 D-12 IRGBC40M
Text: Preliminary Data Sheet PD - 9.1074 IRGBC40M Short Circuit Rated Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC40M
10kHz)
O-220AB
C-314
c313 TRANSISTOR DATA
C-313
D-12
IRGBC40M
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IRGMIC50U
Abstract: DIODE 27A
Text: PD -90813A IRGMIC50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE C Features • • • • • VCES = 600V Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Ultra Fast operation > 10 kHz
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-90813A
IRGMIC50U
IRGMIC50U
DIODE 27A
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TO-3P Jedec package outline
Abstract: IRGPH50S
Text: Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve
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IRGPH50S
400Hz)
O-247AC
TO-3P Jedec package outline
IRGPH50S
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IRGPH50S
Abstract: No abstract text available
Text: Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve
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IRGPH50S
400Hz)
O-247AC
IRGPH50S
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IRGPH50S
Abstract: No abstract text available
Text: Previous Datasheet Index Next Data Sheet Preliminary Data SheetPD - 9.760 IRGPH50S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve
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IRGPH50S
400Hz)
O-247AGE
O-247AC
IRGPH50S
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g10 smd transistor
Abstract: C347 gFE smd diode AN-994 D-12 IRGBC40M-S SMD-220 transistor c347 c347 transistor
Text: Preliminary Data Sheet PD - 9.1135 IRGBC40M-S INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC40M-S
10kHz)
SMD-220
C-348
g10 smd transistor
C347
gFE smd diode
AN-994
D-12
IRGBC40M-S
transistor c347
c347 transistor
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3EML
Abstract: C-580 D-12 IRGB420U IRGB430U diodes ir
Text: PD - 9.784A International [ÏÔR]Rectifier IRGB420U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Rg. 1 for Current vs. Frequency curve
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IRGB420U
O-22QAB
3EML
C-580
D-12
IRGB420U
IRGB430U
diodes ir
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transistor G46
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1139 kitemational IM] Rectifier IRGPH30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz V CE S = 1200V
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400Hz)
IRGPH30S
O-247AC
transistor G46
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VQE 22
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1085 International IsHRectifier IRGPH40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400H z V CES = 1 200V
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IRGPH40S
O-247AC
VQE 22
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet PD - 9.1029 bitemational 11»]Rectifier IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 1 0ps @ 125°C, V qe = 15V • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to
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OCR Scan
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10kHz)
IRGPH40M
O-247AC
C-470
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