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    Untitled

    Abstract: No abstract text available
    Text: bq29440, bq2944L0 bq29449, bq2944L9 www.ti.com SLUSA15B – MARCH 2010 – REVISED JUNE 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29449, bq2944L9 FEATURES


    Original     		PDF bq29440 bq2944L0 bq29449 bq2944L9 SLUSA15B

    drb PACKAGE texas

    Abstract: SLUSA15C bq2944x BQ29440 IS3000
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C drb PACKAGE texas SLUSA15C bq2944x IS3000

    Untitled

    Abstract: No abstract text available
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C

    Untitled

    Abstract: No abstract text available
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C

    bq2944x

    Abstract: drb PACKAGE texas
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C bq2944x drb PACKAGE texas

    BQ29449DRBT

    Abstract: No abstract text available
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C BQ29449DRBT

    Untitled

    Abstract: No abstract text available
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C

    Untitled

    Abstract: No abstract text available
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C

    drb PACKAGE texas

    Abstract: DRB ti
    Text: bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection Check for Samples: bq29440, bq2944L0, bq29441, bq29442, bq29443, bq29449, bq2944L9


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C drb PACKAGE texas DRB ti

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Designs bq29440, bq2944L0 bq29441, bq29442, bq29443, bq29449, bq2944L9 www.ti.com SLUSA15C – JUNE 2010 – REVISED NOVEMBER 2010 Voltage Protection for 2-Series, 3-Series, or 4-Series Cell Li-Ion Batteries Second-Level Protection


    Original     		PDF bq29440 bq2944L0 bq29441 bq29442 bq29443 bq29449 bq2944L9 SLUSA15C

    BQ29200DRBR

    Abstract: BQ29209DRBR
    Text: bq29200 bq29209 www.ti.com SLUSA52A – SEPTEMBER 2010 – REVISED NOVEMBER 2010 Voltage Protection with Automatic Cell Balance for 2-Series Cell Li-Ion Batteries Check for Samples: bq29200 , bq29209 FEATURES 1 • • • • • • 2-Series Cell Secondary Protection


    Original     		PDF bq29200 bq29209 SLUSA52A BQ29200DRBR BQ29209DRBR

    BQ29200DRBR

    Abstract: BQ29209DRBR
    Text: bq29200 bq29209 www.ti.com SLUSA52A – SEPTEMBER 2010 – REVISED NOVEMBER 2010 Voltage Protection with Automatic Cell Balance for 2-Series Cell Li-Ion Batteries Check for Samples: bq29200 , bq29209 FEATURES 1 • • • • • • 2-Series Cell Secondary Protection


    Original     		PDF bq29200 bq29209 SLUSA52A BQ29200DRBR BQ29209DRBR

    OZ 9910

    Abstract: OZ 9910 a AX9910 OZ 9910 g amperex 6252 21-GRID 2XL3 2S40 EEL 22d
    Text: / 7 X *9 / I AMPEREX TUBE TYPE % 6252/AX-9910 GENERAL DESCRIPTION » T he 6 2 5 2 /A X - 9 9 I 0 i s a double tetrode intended for u s e a s a C l a s s C a m p lifie r at f r e q u e n c ie s up to 600 me. T o ta l anode d i s s i p a t i o n i s 20 w a tts, C C S. A llo w a b le


    OCR Scan     		PDF 6252/AX-9910 HA-226 OZ 9910 OZ 9910 a AX9910 OZ 9910 g amperex 6252 21-GRID 2XL3 2S40 EEL 22d

    Untitled

    Abstract: No abstract text available
    Text: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 1 2 8 /1 4 4 M b it R D R A M 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAM™ Revision 1.0 July 1999 Rev. 1.0 Jul. 1999 Preliminary KM416RD8AC(D)/KM418RD8AC(D)_ Direct RDRAM™ Revision History


    OCR Scan     		PDF KM416RD8AC /KM418RD8AC

    toshiba tlc 711

    Abstract: RDRAM Clock T3D Toshiba
    Text: TO SH IB A T E N T A T IV E TC59RM716 8 MB/RB T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILIC O N M O N O L IT H IC Overview The Direct R a m b u s T M DRAM (Direct RDRAMTM) is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video


    OCR Scan     		PDF TC59RM716 128/144-Mbit 600-MHz 800-MHz P-TFBGA62-1312-0 toshiba tlc 711 RDRAM Clock T3D Toshiba

    G5LE-114P-PS

    Abstract: TOKO fi transformer Beckman Industrial 330
    Text: I&TOKO TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ Work Stations


    OCR Scan     		PDF TK84819 IEC-555 ML4819 G5LE-114P-PS HM31-2100 HS104-2 F058-ND FN405-6/02 ERZ-C100K431U G5LE-114P-PS TOKO fi transformer Beckman Industrial 330

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where


    OCR Scan     		PDF PD488448, JUPD488448 128M-bit PD488488 144M-bit 14072EJ1V0D

    9T20T

    Abstract: BA 59 04A FP TDA 5101 TC59 DL0054 4CZ2 it16t CA-23 1312080bz
    Text: TOSHIBA TENTATIVE TC59RM718MB/RB/GB TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The D irect R a m b u s T M DRAM D irect RDRAM ia a general-purpose high perform ance memory device suitable for use in a broad range of applications including com puter memory, graphics, video


    OCR Scan     		PDF 144-Mbit 600-MHz 800-MHz P-TFBGA62-1312-0 P-BGA54-1312-1 9T20T BA 59 04A FP TDA 5101 TC59 DL0054 4CZ2 it16t CA-23 1312080bz

    IN5248B

    Abstract: ECQV1H105JZ ecff1h ZNR 9k CNY17-2Z ECF-F1H104ZF5 ecqv1h224jz ECK-D2H TK84812 105W
    Text: I&TOKO TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ W o rk s ta tio n s


    OCR Scan     		PDF ML4819 TK84819 IEC-555 TK84819 G5LF-114P HM31-2100 HS104-2 58-ND FN405-6/02 IN5248B ECQV1H105JZ ecff1h ZNR 9k CNY17-2Z ECF-F1H104ZF5 ecqv1h224jz ECK-D2H TK84812 105W

    N9301

    Abstract: beckman sp 101 TK84
    Text: r& TO K O TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ Workstations


    OCR Scan     		PDF TK84819 IEC-555 ML4819 IC-112-TK84819 N9301 beckman sp 101 TK84

    j3y transistor

    Abstract: marking R33 .j3y transistor transistor J3Y .j3y J3Y Transistor MARKING 2SC4176 HIGH SPEED SWITCHING NPN N/j3y transistor
    Text: SILICON TRANSISTOR 2SC4176 HIGH SPEED SWITCHING NPN SILICON EPITAXIALTRANSISTOR FEATURE PACKAGE DIMENSIONS in millim eters 2.1 • High Speed: t on < 12 ns t off < 18 ns + 0.1 1 .25+0.1 ABSOLUTE M AXIM UM RATINGS M axim um Voltages and Current T a = 25 °C


    OCR Scan     		PDF 2SC4176 2SC4176 1987M j3y transistor marking R33 .j3y transistor transistor J3Y .j3y J3Y Transistor MARKING HIGH SPEED SWITCHING NPN N/j3y transistor

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR _ / 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S B798 is designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated C ircuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		PDF 2SB798 2SB798 2SD999 Bas36

    Untitled

    Abstract: No abstract text available
    Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1674 DESCR IPTIO N The 2SC1674 is designed fo r use in FM RF am p lifie r and PAC KAG E DIM EN SIO N S local oscillator o f FM tuner. FE A TU R E S in millimeters inches 5 2 MAX. (0204 MAX.) • High gain bandw idth p roduct ( f t = 6 0 0 MHz TYP.)


    OCR Scan     		PDF 2SC1674 2SC1674

    Ba 33 bco

    Abstract: No abstract text available
    Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application


    OCR Scan     		PDF 32/36-M x16/18x8d) /36-M 600MHz Ba 33 bco