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    Untitled

    Abstract: No abstract text available
    Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C


    OCR Scan     		PDF CTG35P60F1 -600V

    MOS Controlled Thyristor

    Abstract: "mos controlled thyristor" D 13 C M 14 100F1 TV-75
    Text: MOS CONTROLLED THYRISTOR PRODUCT MATRIX T O -2 4 7 5 L E A D T O -2 4 7 M 0 -0 9 3 A A M C TV35P60F1D M C TV75P60E 1 M C TV75P100E1 M C TA 65P 100F1 M C TA 75P 60E 1 U N IT S V drm 600 600 600 1000 1000 600 V ' k 90 35t 35+ 75 65 65 75 A *KM 50 50 120 100


    OCR Scan     		PDF CTG35P60F1 TV35P60F1D TV75P60E TV75P100E1 100F1 MOS Controlled Thyristor "mos controlled thyristor" D 13 C M 14 TV-75