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    CT RATIO TEST Search Results

    CT RATIO TEST Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    FO-62.5LPBMT0-001 Amphenol Cables on Demand Amphenol FO-62.5LPBMT0-001 MT-RJ Connector Loopback Cable: Multimode 62.5/125 Fiber Optic Port Testing .1m Datasheet
    FO-9LPBMTRJ00-001 Amphenol Cables on Demand Amphenol FO-9LPBMTRJ00-001 MT-RJ Connector Loopback Cable: Single-Mode 9/125 Fiber Optic Port Testing .1m Datasheet
    SF-SFP28LPB1W-3DB Amphenol Cables on Demand Amphenol SF-SFP28LPB1W-3DB SFP28 Loopback Adapter Module for SFP28 Port Compliance Testing - 3dB Attenuation & 1W Power Consumption Datasheet
    FO-50LPBMTRJ0-001 Amphenol Cables on Demand Amphenol FO-50LPBMTRJ0-001 MT-RJ Connector Loopback Cable: Multimode 50/125 Fiber Optic Port Testing .1m Datasheet
    SF-SFPPLOOPBK-003.5 Amphenol Cables on Demand Amphenol SF-SFPPLOOPBK-003.5 SFP+ Loopback Adapter Module for SFP+ Port Compliance Testing - 3.5dB Copper/Optical Cable Emulation Datasheet
    FO-62.5LPBLC0-001 Amphenol Cables on Demand Amphenol FO-62.5LPBLC0-001 LC Connector Loopback Cable: Multimode 62.5/125 Fiber Optic Port Testing .1m Datasheet

    CT RATIO TEST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T-972

    Abstract: MAXIM 5.1 circuit diagram schematics MAX253 MAX253 TRANSFORMER Maxim MAX253 T972
    Text: Pulse Transformer Designed for use with Maxim MAX253 +5V to Isolated +5V Application Turns Ratio + 5 % 1 CT : 1.3 CT (Pins 5-1:6-2) Electrical Specifications @ 25o C Parameter Min. Open Circuit Inductance (OCL) 100mV, @ 100.0 KHz 1.0 Leakage Inductance


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    PDF MAX253 100mV, UL94-VO T-972 T-972 MAXIM 5.1 circuit diagram schematics MAX253 MAX253 TRANSFORMER Maxim MAX253 T972

    T-942

    Abstract: MAXIM T942 5.1 circuit diagram schematics circuit diagram transformer electric MAX253 T-972
    Text: Pulse Transformer Designed for use with Maxim MAX253 +5V to Isolated +5V Application Turns Ratio + 5 % 1 CT : 1.3 CT (Pins 5-1:6-2) Electrical Specifications @ 25o C Parameter Min. Open Circuit Inductance (OCL) 100mV, @ 100.0 KHz 1.0 Max. mH Leakage Inductance


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    PDF MAX253 100mV, UL94-VO T-972 T-942 T-942 MAXIM T942 5.1 circuit diagram schematics circuit diagram transformer electric MAX253 T-972

    T-939G

    Abstract: MAXIM 6 pin pulse transformer MAX253
    Text: Turns Ratio + 5 % Pulse Transformer 1 CT : 1.3 CT (Pins 1-3:4-6) Units Designed for use with Maxim MAX253 mH Only recommended for applications where FS is High or Open Electrical Specifications @ 25o C Parameter Min. Open Circuit Inductance (OCL) 50mV, @ 100.0 KHz


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    PDF MAX253 100mV, UL94-VO T-939G T-939G MAXIM 6 pin pulse transformer MAX253

    V0195

    Abstract: Y1365 63081 V0181
    Text: SMN Vishay Foil Resistors High Precision Surface Mount 4 Resistor Network Dual-In-Line Package with TCR Tracking ≤ 0.5 ppm/°C, Tolerance Match of 0.01 % and Ratio Stability of 0.005 % FEATURES INTRODUCTION PR O DU CT Any value and any ratio available within resistance range


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    PDF 22-Feb-10 V0195 Y1365 63081 V0181

    Untitled

    Abstract: No abstract text available
    Text: SMN Vishay Foil Resistors High Precision Surface Mount 4 Resistor Network Dual-In-Line Package with TCR Tracking ≤ 0.5 ppm/°C, Tolerance Match of 0.01 % and Ratio Stability of 0.005 % FEATURES INTRODUCTION PR O DU CT Any value and any ratio available within resistance range


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    PDF 27-Apr-2011

    Untitled

    Abstract: No abstract text available
    Text: SMN Vishay Foil Resistors High Precision Surface Mount 4 Resistor Network Dual-In-Line Package with TCR Tracking ≤ 0.5 ppm/°C, Tolerance Match of 0.01 % and Ratio Stability of 0.005 % FEATURES INTRODUCTION PR O DU CT Any value and any ratio available within resistance range


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    PDF 27-Apr-11

    NTE618

    Abstract: No abstract text available
    Text: NTE618 Varactor Silicon Tuning Diode for AM Radio Description; The NTE618 is a silicon varactor diode designed for electronic tuning of AM receivers and high capacitance, high tuning ratio applications. Features: D High Capacitance Ratio: CR = 15 Min D Guaranteed Diode Capacitance: Ct = 440pF (Min), 560pF (Max) @ VR = 1V, f = 1MHz


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    PDF NTE618 440pF 560pF C1/C15

    Untitled

    Abstract: No abstract text available
    Text: ETC4-1-2TR E-Series RF 1:4 Flux Coupled Step-up Transformer 2 – 800 MHz Features •    Rev. V4 Schematic 1:4 Impedance Ratio CT on Secondary Surface Mount Tape and reel packaging available Primary Dot 4 3 Secondary Dot Description 2 Secondary CT


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    PDF SM-22

    M513

    Abstract: ETC4-1-2TR
    Text: ETC4-1-2TR E-Series RF 1:4 Flux Coupled Step-up Transformer 2 – 800 MHz Features •    Rev. V4 Schematic 1:4 Impedance Ratio CT on Secondary Surface Mount Tape and reel packaging available Primary Dot 4 3 Secondary Dot Description 2 Secondary CT


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    PDF SM-22 M513 ETC4-1-2TR

    SDV705Q

    Abstract: No abstract text available
    Text: SDV705Q Semiconductor VHF Variable Capacitance Diode Descriptions PIN Connection The SDV705Q is a variable capacitance diode for VHF TV Tuner. The great matching performance is realized 2 by using it on assembly procedure. Features Good CT-VR linearity Very high capacitance ratio


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    PDF SDV705Q SDV705Q OD-523 KSD-D6D014-001

    Untitled

    Abstract: No abstract text available
    Text: STGW35NC60WD 40 A, 600 V ultra fast IGBT Features • High frequency operation ■ Lower CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode ) s ( ct u d o Applications ■ High frequency motor controls, inverters, UPS


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    PDF STGW35NC60WD O-247

    208H

    Abstract: No abstract text available
    Text: 1. M echanical D im ensions: 0.51 Max — c 0.245 Max — 3. E lectrical Specifications:@ 25°C Isolation Voltage: 1500Vac Jf Turns Ratio: Pins 1 - 2 - 3 : ( 1 6 - 1 5 - 1 4 )= 1 CT:2CT I'S ii 0.030 — I 0.016 E 0.350 _ Turns Ratio: Pins ( 6 - 7 - 8 ) : ( 1 1 - 1 0 - 9 ) = 1 CT:2CT


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    PDF 0013B1A 1500Vac 100KHz E151556 102mm) XF0013B1A 208H

    XF0013W15A

    Abstract: XF001 208H
    Text: 1. M echanical D im ensions: 3. E lectrical Specifications:@ 25°C A •0.68 Max~ |— 1~ Turns Ratio: Pins 1 —2—3 :(12-11 - 1 0)=1 CT: 1CT±2% 0 .1 0 0 ñ ñ ñ ñ ñ ñ . Turns Ratio: Pins (4-5-6):(9-8-7)= 1 CT:2CT±2% XFMRS o X F 00 1 3W 15 A YYWW


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    PDF XF0013W15A 100KHz 10OKHz E151556 102mm) UL1950 XF0013W15A XF001 208H

    01b SMD

    Abstract: 208H 1p5 smd
    Text: 1. Dim ensions: 3. E le c tric a l S p e c ific a tio n s :@ 2 5 <>C A Max — - Isolation Voltage: C 0 .2 4 5 Max - — 0.51 1500 Vrms Turns Ratio: 1 6 - 1 5 - 1 4 :(1 - 2 - 3 ) = 1CT:1 CT ±3% i H 0 .0 3 0 0.016 Turns Ratio: <6— 7 — S):(1 1 - 1 0 -9 > = 1 CT:1.36CT ±3%


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    PDF XF0013B25 100KHz L-STD-202G, UL94V-0 E151556 125LC 102mm) Jan-16-07 01b SMD 208H 1p5 smd

    LT 2807

    Abstract: XF001
    Text: 1. Mechanical Dimensions: 1.115 Max 3. E lectrica l S p ecifica tio n s: 25°C Isolation: 1500 Vrms PRI to SEC TX Turns Ratio: 2:1 <PRI:SEC) RCV Turns Ratio: 2:1 CT (PRI:SEC) PRI OCL: 1,20mH Min @100KHz 50mV Cw/w: 30pF Maximum @100KHz 50mV (PRl/SEC) in


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    PDF XFQ013Q22D MIL-STD-202G, UL94V-0 E15155E XF001 3Q22D Jun-28-07 Jun-28-07 LT 2807

    Untitled

    Abstract: No abstract text available
    Text: 1. M e c h a n i c a l D i m e n s i o n s : 3. E l e c t r i c a l solation: A 1 . 1 1 5 Ma x TX 1500\/rm s Turns Ratio: C 0.24C Max RCV T u r n s PRI 0.035 Return PRI 1 CT: 1 CT Ratio: (PRLSEC 350uH M inim um @100KHz Loss: 1.0 Loss: dB •1 8 d B Max Mi n,


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    PDF 1500\/rm 350uH 100KHz XFATM8Q25 100MHz -55dB 10OKHz 10OmV XPATM8G25

    0013B24

    Abstract: 208H
    Text: 1. D im e n s i o n s : 3. E l e c t r i c a l S p e c i f i e a t i o n s :@ 2 5 ° C Isolation Voltage: A - — 0.51 Max —- 1500 VAC Turns Ratio: 1 - 2 - 3 : ( l 6 -1 5 - 1 4) = 1CT:2.4CT ±3% 4 9 2 a LD o IN X a Turns Ratio: ( 6 - 7 - 8 ) : ( l 1 - 1 0 - 9 ) = 1 CT:1 CT ±3%


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    PDF 0013B24 100KHz 10DKHz 102mm) XF0013B24 Jan-14â 0013B24 208H

    5Ct 14

    Abstract: 208H
    Text: 1. Dimensions: 3. E lectrical A 0.51 Isolation Voltage: Max — I o q C 0 .2 4 5 Max — Specification s: 25°C 1500 V rm s Turns Ratio: (1 6 - 1 5 - 1 4 :(1 - 2 - 3 ) = 1.1 5CT:1 CT ±3% o Jf IT 5 U L J T 0 .0 3 0 — I I— 0.01 6 o d Turns Ratio: ( 6 — 7 — S):(1 1 — 10 — 9) = 1.1 5CT:1 CT ± 3 %


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    PDF 0013B12A 10KHz E151556 -l-85 -i-125 XF0013B12A 0ct-07-09 0ct-07-09 5Ct 14 208H

    XF0013BN15

    Abstract: 0013bn15
    Text: 3. E l e c t r i c a l S p e c ific a tio n s:@ 2 5 C 1. M e c h a n ic a l D im e n s i o n s : Max —- Isolation Voltage: 1500Vac, 60 Seconds • ‘t o c Max c 0.245 -—0.51 Turns Ratio: Pins 1 6 - 1 5 - 1 4 :(1 - 2 - 3 )= 1 CT:1 CT±2% o y $ j Turns Ratio: Pins (6 —7 —8 ):(1 1- 1 0 - 9 )= 1CT:2CT±2%


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    PDF 0013BN15 1500Vac, 100KHz 50rnV H-125 102mm] 10D5S XF0013BN15 0013bn15

    Untitled

    Abstract: No abstract text available
    Text: 3. Electrical 1. Dimensions: Specifications:@25°C Isolation Voltage: - — 0 .5 0 Max —o ' CN X o CN a d Jf 0 .0 3 0 — I 0 .0 1 6 1 6 - 1 5 - 1 4 :(1 —2 —3 )= 1 CT: 1 .1 5CT ±3% Turns Ratio: ( 6 - 7 - 8 ) : ( 1 1 - 1 0 - 9 ) = 1 CT:2CT ± 3 % OCL:


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    PDF XF0013B4IT PIN16 100KHz -l-85 May-04-06

    Untitled

    Abstract: No abstract text available
    Text: 3. Electrical Specifications: @25°C 1. Mechanical Dimensions: 0.730 ISOLATION: 1500 Vrms Prf -to Sec Max TURNS RATIO: P R l/S E C 1 CT:1 CT ± 2 % 0CL: 3 5 0 uH MIN @100KHz 100mV 8mADC o Rise Time: 1,75ns Max. 0 .0 4 5 0 .0 2 5 •±=, - it 0 .0 0 4 E


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    PDF 0DD00DDDD0DD" 350uH 100KHz 100mV 0/35ex: E15155B 102mm' 1000BASE-T 0ct-08-08 0ct-08-0a

    2805

    Abstract: 3B46 XF001
    Text: 1. Dim ensions: 3. E l e c tr ic a l ISOLATION VOLTAGE: c 0.220 Max -—0.50 Max — * J H- Tu RATIO: 1 6 - 1 5 - 1 4 :( 1 - 2 ) : ( 3 - 4 ) = 1 C T :1 :1 ± 5 % IDOo TURNS RATIO: (1 1 - 1 0 - 9 ) : ( 5 - 6 ) : ( 7 - 8 ) = 1 CT: 1:1 %p5% rq o 'd o


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    PDF XF0013B46 10KHz 100mV 100KHz 100mV E151556 -t-125 102mm) 2805 3B46 XF001

    coy80

    Abstract: EL 4N25 120 4N25 4N26 4N27 4N28 4N35 4N36 4N37 4N38
    Text: ISOCOM COMPONENTS Photo Transistor Photo Transistor - Safety Approvals, VDE 0884, BSI, SETI and UL *Note 1 Part Number Features 4N25 Current Transfer Ratio Min % CT R Test Conditions Isolation Test Voltage KV Co n tinu o u s Forward Current Max (m A) B V ceo


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    PDF 4N38A CNX72A CNY17-1 CNY17-2\ coy80 EL 4N25 120 4N25 4N26 4N27 4N28 4N35 4N36 4N37 4N38

    CNYI7F-3

    Abstract: m0c811 SFH601-5 CNX82A SFH600-0 SFH600-1 SFH600-2 SFH600-3 SFH600-4 SFH601-2
    Text: ISOCOM COMPONENTS Photo Transistor - Safety Approvals, VDE 0884, BSI, SETI and UL continued ‘ Note 1 Part Number Features Current Transfer Ratio Min (% ) SFH600-0 4 0 -8 0 SFH600-1 6 3 -1 2 5 CT R Test Conditions Con tinu ou s Forward Current M ax (mA)


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    PDF SFH600-0 SFH600-1 SFH600-2 SFH600-3 SFH600-4 SFH60M SFH601-2 SFH601-3 SFH601-4 SFH601-5\ CNYI7F-3 m0c811 SFH601-5 CNX82A SFH600-0 SFH600-1 SFH601-2