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    CSTBT IGBT Search Results

    CSTBT IGBT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TW030Z120C Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 60 A, 0.041 Ω@18V, TO-247-4L(X) Visit Toshiba Electronic Devices & Storage Corporation

    CSTBT IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOLAR TRANSISTOR

    Abstract: SOLAR INVERTER
    Text: Efficiency Benefits of Full Gate CSTBT in PV Applications Executive Summary Full Gate CSTBT™ allows you to harvest more energy than competing technologies. Powerex Intelligent Power Modules include gate drivers that are optimized for Full Gate CSTBT.


    Original     		PDF

    cm150rx1

    Abstract: cm100rx-24 CM50MX-24A CM600HX-12A CM50M cm75mx-24a CM450DX-24A cm35mx CM35MX-24A CM600HX-24A
    Text: Product Bulletin Diamond Power Products NX-SERIES IGBTS Package A Package B DESCRIPTION The NX -Series IGBT uses the 5th Generation CSTBT Carrier Stored Trench-Gate Bipolar Transistor chip. The CSTBT chip offers lower losses as compared to previous chip generations.


    Original     		PDF DP-00035 cm150rx1 cm100rx-24 CM50MX-24A CM600HX-12A CM50M cm75mx-24a CM450DX-24A cm35mx CM35MX-24A CM600HX-24A

    wind inverter

    Abstract: SOLAR TRANSISTOR SOLAR INVERTER mitsubishi power module
    Text: Efficiency Benefits of Full Gate CSTBT in Wind Power Applications Executive Summary Full Gate CSTBT™ allows you to harvest more energy from the same source than competing technologies. There are two major reasons that wind inverter customers focus on efficiency.


    Original     		PDF

    H BRIDGE inverters using igbt

    Abstract: difference between inverter and ups difference between IGBT and MOSFET IN inverter n Power mosfet depletion
    Text: New MEGA POWER DUAL IGBT Module with Advanced 1200V CSTBT Chip Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA


    Original     		PDF 400A/1200V H BRIDGE inverters using igbt difference between inverter and ups difference between IGBT and MOSFET IN inverter n Power mosfet depletion

    PM100RLA060

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM100RLA060 PM100RLA060

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C


    Original     		PDF PM100CLA120 5kW/22kW

    E80276

    Abstract: PM150RLA120
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C


    Original     		PDF PM150RLA120 E80276 PM150RLA120

    E80276

    Abstract: PM100CLA120
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C


    Original     		PDF PM100CLA120 5kW/22kW E80276 PM100CLA120

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C


    Original     		PDF PM100RLA120

    E80276

    Abstract: PM150RLA120 optocoupler PC 187
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C


    Original     		PDF PM150RLA120 E80276 PM150RLA120 optocoupler PC 187

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM600CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM600CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.8V @Tj=125°C


    Original     		PDF PM600CLA060 45kW/55kW

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM150CLA060

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM200CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM200CLA060

    PM150CLA060

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM150CLA060 PM150CLA060

    30KW Inverter Diagram

    Abstract: PM300CLA060 IGBT 10 A Optocoupler PC 801
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM300CLA060 30KW Inverter Diagram PM300CLA060 IGBT 10 A Optocoupler PC 801

    PM100CLA060

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM100CLA060 PM100CLA060

    E80276

    Abstract: PM100RLA060 INVERTER FOR motor
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM100RLA060 protectio15 E80276 PM100RLA060 INVERTER FOR motor

    E80276

    Abstract: PM150RLA060
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM150RLA060 protectio20 E80276 PM150RLA060

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM200RLA060

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM300CLA060

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM300RLA060

    PM100*060

    Abstract: optocoupler PC 187
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C


    Original     		PDF PM100RLA060 PM100*060 optocoupler PC 187

    E80276

    Abstract: PM50B4LB060 OPTOCOUPLER 15V
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B4LB060 FLAT-BASE TYPE INSULATED PACKAGE PM50B4LB060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C


    Original     		PDF PM50B4LB060 E80276 PM50B4LB060 OPTOCOUPLER 15V

    E80276

    Abstract: PM50B5LA060
    Text: MITSUBISHI <INTELLIGENT POWER MODULES> PM50B5LA060 FLAT-BASE TYPE INSULATED PACKAGE PM50B5LA060 FEATURE a Adopting new 5th generation IGBT CSTBT TM ) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.55V @Tj=125°C


    Original     		PDF PM50B5LA060 under-00 E80276 PM50B5LA060