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    CS-18 1024 Search Results

    CS-18 1024 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    95278-102-40LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Header, SMT, Double Row, 40 Positions, 2.54 mm Pitch, Vertical, 5.84 mm (0.23 in.) Mating Visit Amphenol Communications Solutions
    54112-812102450LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    51740-10102401CALF Amphenol Communications Solutions PwrBlade®, Power Supply Connectors, 1P 24S 1P PF Vertical Receptacle. Visit Amphenol Communications Solutions
    87610-240LF Amphenol Communications Solutions Quickie® Shrouded Low Profile Header, Wire To Board, Vertical, Through Hole, Double Row, 40 Positions, 2.54mm (0.100in) Pitch. Visit Amphenol Communications Solutions
    76350-310-24LF Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right Angle Header, Through Hole, Double row , 24 Positions, 2.54mm (0.100in) Pitch Visit Amphenol Communications Solutions
    SF Impression Pixel

    CS-18 1024 Price and Stock

    Samtec Inc S2SD-10-24C-S-18.00-S

    Rectangular Cable Assemblies 2.00 mm Tiger Eye Double Row Discrete Wire Cable Assembly, Socket
    Free Sample
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics S2SD-10-24C-S-18.00-S
    • 1 $16.7
    • 10 $15.81
    • 100 $12.87
    • 1000 $10.89
    • 10000 $10.89
    		Get Quote

    CS-18 1024 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 32C408B 4 Megabit 512K x 8-Bit SRAM A13 A0 A1 1 36 A2 A3 A4 CS NC A18 A17 A16 A15 OE I/O1 I/O2 Vcc Vss I/O3 I/O8 I/O7 Vss Vcc I/O6 32C408B I/O5 A14 A13 A12 A7 A8 A9 A11 A10 NC 18 19 A11 A10 A9 ROW DECODER A8 A7 MEMORY MATRIX 1024 ROWS x 4096 COLUMNS A6 A5


    Original     		32C408B 32C408B 512kword PDF

    TLV5638

    Abstract: TLV5638CD TLV5638ID TLV5638MFK TLV5638MJG TLV5638QD TLV5638QDR TMS320
    Text: TLV5638 2.7-V TO 5.5-V LOW-POWER DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN SLAS225B – JUNE 1999 – REVISED JUNE 2000 features 8 2 7 3 6 4 5 VDD OUTB REF AGND 2 1 20 19 NC V DD 3 NC 4 18 NC SCLK 5 17 OUTB NC 6 16 NC CS


    Original     		TLV5638 12-BIT SLAS225B TLV5638 TLV5638CD TLV5638ID TLV5638MFK TLV5638MJG TLV5638QD TLV5638QDR TMS320 PDF

    TLV56xx-family

    Abstract: TLV5638 application
    Text: TLV5638 2.7-V TO 5.5-V LOW-POWER DUAL 12-BIT DIGITAL-TO-ANALOG CONVERTER WITH INTERNAL REFERENCE AND POWER DOWN SLAS225B – JUNE 1999 – REVISED JUNE 2000 features 8 2 7 3 6 4 5 VDD OUTB REF AGND 2 1 20 19 NC V DD 3 NC 4 18 NC SCLK 5 17 OUTB NC 6 16 NC CS


    Original     		TLV5638 12-BIT SLAS225B TMS320 TLV5638MJG TLV5638MJGB TLV5638QD TLV5638QDR 5962-9957601QPA TLV56xx-family TLV5638 application PDF

    32C408BRP-20

    Abstract: 32C408BRP-25 32C408BRP-30 F3601 32c49
    Text: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC


    Original     		512KWORD 32C408BRP 36LDFP F36-01 98Rev3 32C408BRP-20 32C408BRP-25 32C408BRP-30 F3601 32c49 PDF

    32C408BRP-20

    Abstract: 32C408BRP-25 32C408BRP-30 512KWORD F3601 32c49
    Text: SPACE ELECTRONICS INC. CMOS 512KWORD X 8-BIT STATIC RAM SPACE PRODUCTS A0 A1 1 32C408BRP 36 NC A18 A17 A16 A2 A3 A13 A12 A11 A10 A9 A8 CS I/O1 A15 OE A7 A6 I/O8 A4 I/O2 I/O7 Vcc Vss Vss Vcc I/O3 I/O4 I/O6 I/O5 WE A14 A5 A6 A13 A12 A7 A8 A11 A10 A4 18 19 NC


    Original     		512KWORD 32C408BRP 99Rev3 32C408BRP-20 32C408BRP-25 32C408BRP-30 F3601 32c49 PDF

    M08A

    Abstract: NM93C86ALZ NM93C86LZ
    Text: General Description Features The NM93C86LZ/C86ALZ is 16,384 bits of CMOS non-volatile, electrically erasable memory available in either 1024 16-bit registers NM93C86LZ , or user organized as either 1024 16-bit registers or 2048 8-bit registers (NM93C86ALZ). The user organization is determined by the


    Original     		NM93C86LZ/C86ALZ 16-bit NM93C86LZ) NM93C86ALZ) NM93C86LZ/ ds012512 M08A NM93C86ALZ NM93C86LZ PDF

    MA5114

    Abstract: DS3591-4
    Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		MA5114 1024x4 DS3591-4 DS3591-5 MA5114 PDF

    NTE2114

    Abstract: No abstract text available
    Text: NTE2114 Integrated Circuit MOS, Static 4K RAM, 300ns Description: The NTE2114 1024–word 4–bit static random access memory is fabricated using N–channel silicon– gate technology. All internal circuits are fully static and therefore require no clocks or refreshing for


    Original     		NTE2114 300ns NTE2114 225mW 300ns PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA5114 MARCH 1995 DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard,


    Original     		MA5114 DS3581-3 MA5114 PDF

    MA5114

    Abstract: a8415
    Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		MA5114 1024x4 DS3591-5 MA5114 a8415 PDF

    MA5114

    Abstract: 17-18L
    Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with


    Original     		MA5114 1024x4 DS3591-5 MA5114 17-18L PDF

    DAS05

    Abstract: AK6416CM AK6416C AK6416CH SK3132 das05e SK3334
    Text: ASAHI KASEI [AK6416C] AK6416C 16Kbit Serial CMOS EEPROM Features ADVANCED CMOS EEPROM TECHNOLOGY READ/WRITE NON-VOLATILE MEMORY - Wide VCC 1.8V to 5.5V operation - 16384 bits: 1024 x 16 organization ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer’s serial communication port directly


    Original     		AK6416C] AK6416C 16Kbit 1000K DAS05 AK6416CM AK6416C AK6416CH SK3132 das05e SK3334 PDF

    EEPROM

    Abstract: AK6416CM DAS05
    Text: ASAHI KASEI [AK6416C] AK6416C 16Kbit Serial CMOS EEPROM Features  ADVANCED CMOS EEPROM TECHNOLOGY  READ/WRITE NON-VOLATILE MEMORY - Wide VCC 1.8V to 5.5V operation - 16384 bits: 1024  16 organization  ONE CHIP MICROCOMPUTER INTERFACE - Interface with one chip microcomputer’s serial communication port directly


    Original     		AK6416C] AK6416C 16Kbit 1000K EEPROM AK6416CM DAS05 PDF

    NM93CS46M8

    Abstract: M08A MTC08
    Text: General Description The NM93CS06/CS46/CS56/CS66 devices are 256/ 1024/ 2048/4096 bits, respectively, of CMOS non-volatile electrically erasable memory divided into 16/64/128/ 256 16-bit registers. Selected registers can be protected against data modification by programming the Protect Register with the


    Original     		NM93CS06/CS46/CS56/CS66 16-bit ds010750 NM93CS46M8 M08A MTC08 PDF

    PC133R-333-542

    Abstract: pc133 sdram pc133r sdram PC133R-333-542 VOLTAGE DIMM 72 pin out RAWCARD hys72v128520gr PC133R-333-542 CL 3 AD0800
    Text: HYS 72Vxx5/6x0GR-7.5 Low Profile PC133 Registered SDRAM-Modules 3.3 V Low Profile 168-pin PC133 Registered SDRAM Modules for 1U Server Applications PC133 128 MByte Module PC133 256 MByte module PC133 512 MByte Module PC133 1024 MByte Module PreliminaryData Sheet Rev. 0.9 9/01


    Original     		72Vxx5/6x0GR-7 PC133 168-pin 128Mx72 PC133R-333-542 pc133 sdram pc133r sdram PC133R-333-542 VOLTAGE DIMM 72 pin out RAWCARD hys72v128520gr PC133R-333-542 CL 3 AD0800 PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • • • • • • 100% Compatible to AT45DB021 and AT45DB021A Single 2.7V - 3.6V Supply Serial Interface Architecture Page Program Operation – Single Cycle Reprogram Erase and Program – 1024 Pages (264 Bytes/Page) Main Memory


    Original     		AT45DB021 AT45DB021A 264-byte 1937C 09/01/xM PDF

    1024M

    Abstract: PC2-5300 SN13
    Text: Memory Module Specifications KVR667D2D4F5/8GI 8GB 1024M x 72-Bit PC2-5300 CL5 ECC 240-Pin FBDIMM Description: This document describes ValueRAM’s 8GB 1024M x 72-bit PC2-5300 CL5 SDRAM (Synchronous DRAM) "fully buffered" ECC "dual rank" Intel certified memory module. This module is based on eighteen stacked 1024M x 4bit (thirty-six 512M x 4-bit) 667MHz DDR2 FBGA components. The module also includes an AMB device (Advanced


    Original     		KVR667D2D4F5/8GI 1024M 72-Bit PC2-5300 240-Pin 72-bit) PC2-5300 667MHz SN13 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 8GB Fully Buffered DIMM EBE82FF4A1RR Specifications Features • Density: 8GB • Organization  1024M words x 72 bits, 4 ranks • Mounting 36 pieces of 2G bits DDR2 SDRAM with DDP FBGA  DDP: 2 pieces of 1Gb chips sealed in one package


    Original     		EBE82FF4A1RR 1024M 240-pin 655-ball 667Mbps M01E0706 E1339E10 PDF

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor DS90C363/DS90CF364 +3.3V Programmable LVDS Transmitter 18-Bit Flat Panel Display FPD Link— 65 MHz, +3.3V LVDS Receiver 18-Bit Flat Panel Display (FPD) Link— 65 MHz Block Diagram s Application HOST G R A PHI CS LCD P A NE L CON TROLL ER


    OCR Scan     		DS90C363/DS90CF364 DS90C363/DS90CF364 18-Bit DS90C363 DS90CF364 b0-272-9959 PDF

    k143

    Abstract: No abstract text available
    Text: N E C ELECTRONI CS I NC blE D % T Æ 7f The /JPD424190A/L and /JPD42S4190A/L are fas t-p a g e d ynam ic RAMs organized as 262,144 words by 18 bits a nd designed to o p e ra te from a single pow er supply. Optional features are pow er supply voltage + 5 V or


    OCR Scan     		uPD424190A/L uPD42S4190A/L 18-Bit /JPD424190A/L /JPD42S4190A/L 24190A 424190L 42S4190A 42S4190L b427525 k143 PDF

    Untitled

    Abstract: No abstract text available
    Text: WD2511A X.25 Packet Network Interface LAPB FEATURES NO , W CONNECTION REPLYCZ 2 we [ZZ 3 cs CZ 4 re r z 5 CLKCZ 6 MRCZ 7 DALOCZ 8 DAL1 dH 9 DAL2 I 10 DAL3 i 11 DAL4 ( 12 DA15 I 13 DAL6 CH 14 DAL7 CZ 15 RDCZ 16 RCCZ 17 (GND)Vgs I 18 TCC 19 td c z 20 RTS^ 21


    OCR Scan     		WD2511A 1-800-NET W1336C PDF

    SEIKO Year of assembly

    Abstract: S22H12I01
    Text: S-22H12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22H12R/I is a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and


    OCR Scan     		S-22H12R/I 256-word S-22H12R/I X2212 Pi133 A123443 SEIKO Year of assembly S22H12I01 PDF

    Untitled

    Abstract: No abstract text available
    Text: S i GEC P L E S S E Y SE MI CO N D U C T O R S DS3581-3.1 MA5114 RADIATION HARD 1024 x 4 BIT STATIC RAM The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3|im technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan     		DS3581-3 MA5114 MA5114 37bfl522 PDF

    S-22S12I

    Abstract: S-22S12R X2212 seiko s22s
    Text: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and


    OCR Scan     		S-22S12R/I 256-word S-22S12R/I X2212 10mAtyp. S-22S12I S-22S12R seiko s22s PDF