O72 CN
Abstract: DIN 32 676 LCD dot tlc 711 specifications of ic 1408 LCD 24 segments, 4 commons tlc 711
Text: SPLD80A5 DOT MATRIX LCD DRIVER GENERAL DESCRIPTION The SPLD80A5, a dot matrix common/segment LCD driver, is fabricated by low power CMOS technology. This LSI includes an 80-bit shift register, an 80-bit data latch and an 80-bit 4-level driver. It converts serial data to
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SPLD80A5
SPLD80A5,
80-bit
SPLD80A5
O72 CN
DIN 32 676
LCD dot tlc 711
specifications of ic 1408
LCD 24 segments, 4 commons
tlc 711
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specifications of ic 1408
Abstract: DIN 32 676
Text: SPLD80A4 80-CHANNEL SEG/COM LCD DRIVER GENERAL DESCRIPTION The SPLD80A4, a dot matrix common/segment LCD driver, is fabricated by low power CMOS technology. This LSI includes an 80-bit shift register, an 80-bit data latch and an 80-bit 4-level driver. It converts serial data to
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SPLD80A4
80-CHANNEL
SPLD80A4,
80-bit
SPLD80A4
specifications of ic 1408
DIN 32 676
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CD 1517
Abstract: CP SPL PL 90 specifications of ic 1408 DO80 P34P SPLD80A4 LCD dot tlc 711
Text: S PLD80A4 SP 80-Channel SEG/COM LCD Driver MAY. 08, 2002 Version 1.4 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.
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SPLD80A4
80-Channel
CD 1517
CP SPL PL 90
specifications of ic 1408
DO80
P34P
SPLD80A4
LCD dot tlc 711
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CD 1517
Abstract: specifications of ic 1408 DO80 P34P
Text: S PLD80A6 SP 80-Channel SEG/COM LCD Driver Preliminary APR. 24, 2002 Version 0.1 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable.
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SPLD80A6
80-Channel
CD 1517
specifications of ic 1408
DO80
P34P
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES +5 V, ± 5 V Power Supplies Ultralow Power Dissipation <0.5 p,W Low Leakage (<100 pA) Low On Resistance (<50 i l ) Fast Switching Times Low Charge Injection TTL/CM O S Com patible TSSOP Package UtfMOS Precision 5 V Quad SPST Pitches
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ADG661/ADG662/ADG663
16-Lead
RU-16)
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cd 4440 cs
Abstract: 6 PIN 36AA 496 qh 06ba 24BA 24as am/961273
Text: 13 12 10 -M A K E -F IR S T /B R E A K -L A S T P IN , NOTES: • STANDARD PIN & I HOUSING MATERIALS A B C "A1 REF. NYLON 6 / 6 , U .L. 9 4 V -2 , COLORs NATURAL. NYLON 6 / 6 , U.L. 9 4 V -0 , COLORs NATURAL. PBT POLYESTER 9 4 V -0 , COLORs BLACK. 2) TERMINAL M ATERIAL: BRASS, ALLOY 2 6 0 .
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SDA-43693-*
cd 4440 cs
6 PIN 36AA
496 qh
06ba
24BA
24as
am/961273
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2dua
Abstract: No abstract text available
Text: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC K M 44C 4002A /A L/A LL/A S L-5 50ns 13ns 90ns K M 44C 4002A /A L/A LL/A S L-6 60ns 15ns 110ns K M 44C 4002A /A L/A LL/A S L-7
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KM44C4002A/AL/ALL/ASL
110ns
130ns
150ns
KM44C4002A/AL/ALL/ASL
24-LEAD
300MIL,
400MIL)
2dua
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Untitled
Abstract: No abstract text available
Text: 13 12 10 7 8 -M A K E -F IR S T /B R E A K -L A S T PIN A NOTES: • STANDARD PIN A I HOUSING MATERIAL? A B C "A1 REF. NYLON 6 / 6 , U .L. 9 4 V -2 , COLORs NATURAL. NYLON 6 / 6 , U.L. 9 4 V -0 , COLORs NATURAL. PBT POLYESTER 9 4 V -0 , COLORs BLACK. 2) TERMINAL MATERIALS BRASS, ALLOY 2 6 0 .
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XQFP044-G-0000-A
Abstract: CXA1156AQ RS-343A CXA1156AO SONY cx 2290C
Text: C X A 1156A Q SONY, 8-bit 400MSPS Triple VIDEO D/A Converter D e scrip tio n The CXA1156AQ is an 8-bit high-speed D/A converter with input/output of 3 channels for RGB. This IC achieves maximum conversion rate of 400MSPS, and is suitable for signal processing
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CXA1156AQ
400MSPS
CXA1156AQ
400MSPS,
400MSPS
RS-343A
50MIL)
50MIL
XQFP044-G-0000-A
CXA1156AO
SONY cx
2290C
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transistor bc 658
Abstract: BUW92 TRANSISTOR bc 657 LB104 2N210 BUW9
Text: 7 e 2 '12 3 7 G Q 2inG 3 2 H "7 ^ 3 3 ~ Î3 S G S -T H O M S O N QQ[R ô)[i[Li ir^(Q)^a©i_ S 6 S - T H OM SON 30E B U W 92 D FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES ■ LOW SWITCHING L O S S ES ■ V ER Y LOW SATURATION VOLTAGE AND
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T-33-Ã
BUW92
O-218
transistor bc 658
BUW92
TRANSISTOR bc 657
LB104
2N210
BUW9
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS iS MH16M09ATJ-6,-7/ MH16M09ATJA-6,-7 FAST PAGE MODE 150994944-BIT 16777216-WORD BY 9-BIT DYNAMIC RAM D E SC R IP TIO N The M H 1 6 M 0 9 A T J /A T J A is 167772 16 -w o rd by 9 -b it dynamic RAM and consists o f nine industly standard 1 6 M x
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MH16M09ATJ-6
MH16M09ATJA-6
150994944-BIT
16777216-WORD
09ATJ-6,
09ATJA-7
72piAM
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HYM532414
Abstract: HY5117404
Text: •HYUN D AI HYM532414 N-Series 4M X 32-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM532414 is a 4M x 32-bit EDO mode CMOS DRAM module consisting of eight HY5117404A in 24/26 pin TSOPII on a 72 Zig Zag Dual tabs pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted
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HYM532414
32-bit
HY5117404A
HYM532414TNG/SLTNG
A0-A10)
DQ0-DQ31)
1CE13-10-DEC94
YM532414
HY5117404
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Untitled
Abstract: No abstract text available
Text: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4002A/AL/ALL/ASL is a high speed CMOS 4,194,304 b i t x 4 Dynamic Random Access Memory. Its design is optimized for high
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KM44C4002A/AL/ALL/ASL
KM44C4002A/AL/ALL/ASL
110ns
130ns
150ns
24-LEAD
300MIL,
t5h4142
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C50U
Abstract: No abstract text available
Text: SGS-THOMSON M M § m [lO T « S B U W 92 FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN TO -218 ABSOLUTE MAXIMUM RATINGS Sym bol P a ra m e te r V a lu e U n it VcEV C o lle cto r-e m itte r V oltage V Be = - 1.5 V
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Untitled
Abstract: No abstract text available
Text: November 1993 Edition 3.0 FUJITSU DATA SHEET M B 8 1 1 16820-0101-0121-015 CMOS 2 x I M x 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory
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576-WORDS
MB81116820
SD-08404-03-93-DS
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9624DC
Abstract: ut 29627
Text: LSI Components PRODUCT SPECIFICATIONS RAYTHEON Field-Programmable Read-Only Memories Description 29000 Series Features R a y t h e o n ’s 290 00 S e r i e s of F ie ld Programmable Read-Only Memories includes most of the popular PR O M configurations in
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hi023
100BSC
54BSC
9624DC
ut 29627
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P227C
Abstract: Amplifier k thermocouple P227G OP-227 OP227GP OP227
Text: ALPHA W aWMsem ico n d u cto r AS OP-227 Excellence in Analog Power Products Dual Matched-Ultra Low offset- Low Noise Operational Amplifier FEATURES APPLICATIONS • Low Max. • Vos vs- .
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OP-227
80jiV
154dB
OP227
P227C
Amplifier k thermocouple
P227G
OP-227
OP227GP
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HYM536120
Abstract: No abstract text available
Text: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling
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HYM536120
36-bit
HY5118160
HY531000A
HYM536120W/LW
HYM536120WG/LWG
DQ0-DQ35)
DDGSS34
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2IMC
Abstract: No abstract text available
Text: 82527 SERIAL COMMUNICATIONS CONTROLLER CONTROLLER AREA NETWORK PROTOCOL Automotive • Supports CAN Specification 2.0 — Standard Data and Remote Frames — Extended Data and Remote Frames ■ Programmable Global Mask — Standard Message Identifier — Extended Message Identifier
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16-Bit
44-Lead
44-Lof
2IMC
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Untitled
Abstract: No abstract text available
Text: A N A LO G D EVICES LC2M0S Latched 8/16 Channel Analog Multiplexers ADG526A/ADG527A 1.1 Scope. This specification covers the detail requirements of CMOS monolithic analog multiplexers ADG526A and ADG527A with 16 channels and dual 8 channels, respectively. These multiplexers also feature high
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ADG526A/ADG527A
ADG526A
ADG527A
ADG526AT
/883B
ADG527AT
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LT1220
Abstract: No abstract text available
Text: u n m l t c i 4 i ° TECH N O LO G Y 12-Bit, 1.25M sps S a m p lin g A / D C o n v e r te r w ith S h u td o w n F€flTUR€S D C S C M P T IO n • 1.25Msps Sample Rate ■ Power Dissipation: 160mW ■ 71 dB S/ N + D and 82dB THD at Nyquist ■ No Pipeline Delay
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12-Bit,
25Msps
160mW
15ppm/Â
20MHz
28-Pin
65jjs,
25Msps,
12-bit
160mW
LT1220
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poly silicon resistor
Abstract: PD43256A Signal Path Designer 630048
Text: *^ ^ APPLICATION NOTE 5 0 BATTERY BACKUP c ir c u it s f o r s ra m s w NEC Electronics Inc. Introduction The evolution of low-power, high-capacity, high-speed memory technologies has led the system designer to novel and highly portable computer designs. As tech
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2N3904
poly silicon resistor
PD43256A
Signal Path Designer
630048
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Untitled
Abstract: No abstract text available
Text: V E 26417805B , VE46417 805B 2M,4M x 64-Bit Dynamic RAM Module_ vism Description The VE26417805 and VE46417805 are 2M x 64-bit and 4M x 64-bit dual-in-line dynamic RAM modules DIMM . It is mounted by 8/16 pieces of 2M X 8 DRAM (VG26V17805B), and each in a standard 28 pin plastic SOJ packages. The VE26417805 and VE46417805 make
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26417805B
VE46417
64-Bit
VE26417805
VE46417805
VG26V17805B)
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Untitled
Abstract: No abstract text available
Text: November 1993 Edition 3.0 FUJITSU DATA SHEET M B 8 1 1 1 6 8 2 0 - 0 1 0/ - 0 1 2 / - 0 1 5 CMOS 2 x 1 M x 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory
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576-WORDS
MB81116820
FPT-44P-M10)
10T76Ã
F44015S-1C-1
374175b
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