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    CROSSING PAGE BOUNDARY - ENSURE PAGE BITS ARE SET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    8V54816ANLG8 Renesas Electronics Corporation 16-Port, Bi-directional M-LVDS Clock Cross-Point Switch Visit Renesas Electronics Corporation
    8V54816ANLG Renesas Electronics Corporation 16-Port, Bi-directional M-LVDS Clock Cross-Point Switch Visit Renesas Electronics Corporation
    iW1820-33 Renesas Electronics Corporation 15W AccuSwitch™ AC/DC Digital Primary-Side Switcher Eliminates Optocoupler and Maintains Excellent Cross-Regulation Accuracy Visit Renesas Electronics Corporation
    iW1820-35 Renesas Electronics Corporation 15W AccuSwitch™ AC/DC Digital Primary-Side Switcher Eliminates Optocoupler and Maintains Excellent Cross-Regulation Accuracy Visit Renesas Electronics Corporation
    iW1818-00 Renesas Electronics Corporation 12W AccuSwitch™ AC/DC Digital Primary-Side Switcher Eliminates Optocoupler and Maintains Excellent Cross-Regulation Accuracy Visit Renesas Electronics Corporation

    CROSSING PAGE BOUNDARY - ENSURE PAGE BITS ARE SET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S29WS128N

    Abstract: SA050 S29WS S29WS256N S29WS-N BAX55
    Text: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory S29WS-N MirrorBitTM Flash Family Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29WS-N S29WS256N, S29WS128N S29WS128N SA050 S29WS S29WS256N BAX55

    MPC8540

    Abstract: DDR12 MPC8540CE DDR11 DDR10 CPU29 LBC11 0x81000100 PCIX30
    Text: Freescale Semiconductor MPC8540CE Rev 0.3, 11/2004 Errata MPC8540 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8540 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.


    Original     		PDF MPC8540CE MPC8540 TSEC18/FEC18. DDR11, DDR12, MPC8540 DDR12 MPC8540CE DDR11 DDR10 CPU29 LBC11 0x81000100 PCIX30

    S29WS128N

    Abstract: S29WS S29WS256N S29WS-N
    Text: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications


    Original     		PDF S29WS-N S29WS256N, S29WS128N S29WS128N S29WS S29WS256N

    RLDRAM

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron RLDRAM MT49H16M18C

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C

    DDR12

    Abstract: MPC8540 MPC8540CE DDR11 DDR10
    Text: Freescale Semiconductor MPC8540CE Rev 0.2, 10/2004 Errata MPC8540 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8540 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.


    Original     		PDF MPC8540CE MPC8540 TSEC18/FEC18. DDR11, DDR12, MPC8540 DDR12 MPC8540CE DDR11 DDR10

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS320G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS320G 27243B0

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am29BDS320G 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single 1.8 volt read, program and erase (1.65 to 1.95 volt) ■ Manufactured on 0.17 µm process technology


    Original     		PDF Am29BDS320G 16-Bit)

    adr-301

    Abstract: NIC-301 AMBA Network Interconnect NIC-301 Implementation Guide AMBA AXI to AHB BUS Bridge verilog code state diagram of AMBA AXI protocol v 1.0 AMBA AXI designer user guide verilog rtl code of Crossbar Switch AMBA AHB bus protocol AMBA AXI verilog code nic301
    Text: CoreLink Network Interconnect NIC-301 Revision: r2p2 Technical Reference Manual Copyright 2006-2010 ARM. All rights reserved. ARM DDI 0397H ID080710 CoreLink Network Interconnect NIC-301 Technical Reference Manual Copyright © 2006-2010 ARM. All rights reserved.


    Original     		PDF NIC-301 0397H ID080710) ID080710 32-bit adr-301 NIC-301 AMBA Network Interconnect NIC-301 Implementation Guide AMBA AXI to AHB BUS Bridge verilog code state diagram of AMBA AXI protocol v 1.0 AMBA AXI designer user guide verilog rtl code of Crossbar Switch AMBA AHB bus protocol AMBA AXI verilog code nic301

    Untitled

    Abstract: No abstract text available
    Text: Intel Xeon® Processor 7400 Series Specification Update December 2010 Reference Number: 320336-008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS


    Original     		PDF maapplnots/317080

    S29WS128N

    Abstract: sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N S70WS512N00 TSB084 sample code write buffer spansion SA047-SA050
    Text: S70WS512N00 Based MCPs Same-Die Stacked Multi-Chip Product MCP 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		PDF S70WS512N00 S29WS128N sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N TSB084 sample code write buffer spansion SA047-SA050

    MICRON BGA PART MARKING

    Abstract: amd catalog MT49H32M18C
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MICRON BGA PART MARKING amd catalog MT49H32M18C

    LG E500

    Abstract: marking 53B MPC8560CE MPC8560 tsec application DDR12 MPC8560
    Text: Freescale Semiconductor MPC8560CE Rev 0.2, 10/2004 Errata MPC8560 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8560 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.


    Original     		PDF MPC8560CE MPC8560 TSEC18. DDR11, CPM13-16, DDR12, MPC8560 LG E500 marking 53B MPC8560CE MPC8560 tsec application DDR12

    TRANSISTOR BFW 11 pin diagram

    Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) S29WS256/128/064N TRANSISTOR BFW 11 pin diagram 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11

    SA047

    Abstract: No abstract text available
    Text: S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst


    Original     		PDF S29WS-N S29WS256N, S29WS128N, S29WS064N 16-Bit) S29WS256/128/064N SA047

    SA047

    Abstract: No abstract text available
    Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29WS064R 16-bit) S29WS064R SA047

    MT49H32M18C

    Abstract: No abstract text available
    Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock


    Original     		PDF 576Mb: MT49H32M18C MT49H64M9C 09005aef80a41b59/Source: 09005aef811ba111 MT49H32M18C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)


    Original     		PDF Am42BDS6408G Am29BDS640G 16-Bit) 93-Ball

    Am54BDS128AGB89I

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Am54BDS128AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS


    Original     		PDF Am54BDS128AG Am29BDS640G 16-Bit) 93-Ball FMA093--93-Ball Am54BDS128AGB89I

    smd transistor marking HT1

    Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron smd transistor marking HT1 MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS640G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS640G 25903C1 25903C1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)


    Original     		PDF Am42BDS6408G Am29BDS640G 16-Bit) 93-Ball

    Untitled

    Abstract: No abstract text available
    Text: Am29BDS640G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29BDS640G 25903C0

    SA059

    Abstract: 0x555 SA041 SA047
    Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29WS064R 16-bit) S29WS064R SA059 0x555 SA041 SA047