S29WS128N
Abstract: SA050 S29WS S29WS256N S29WS-N BAX55
Text: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory S29WS-N MirrorBitTM Flash Family Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29WS-N
S29WS256N,
S29WS128N
S29WS128N
SA050
S29WS
S29WS256N
BAX55
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MPC8540
Abstract: DDR12 MPC8540CE DDR11 DDR10 CPU29 LBC11 0x81000100 PCIX30
Text: Freescale Semiconductor MPC8540CE Rev 0.3, 11/2004 Errata MPC8540 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8540 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.
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MPC8540CE
MPC8540
TSEC18/FEC18.
DDR11,
DDR12,
MPC8540
DDR12
MPC8540CE
DDR11
DDR10
CPU29
LBC11
0x81000100
PCIX30
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S29WS128N
Abstract: S29WS S29WS256N S29WS-N
Text: S29WS-N MirrorBitTM Flash Family S29WS256N, S29WS128N 256/128 Megabit 16/8 M x 16 bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory Data Sheet PRELIMINARY Notice to Readers: This document states the current technical specifications
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S29WS-N
S29WS256N,
S29WS128N
S29WS128N
S29WS
S29WS256N
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RLDRAM
Abstract: MT49H16M18C
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization
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288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
2003Micron
RLDRAM
MT49H16M18C
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PDF
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MT49H16M18C
Abstract: No abstract text available
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization
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288Mb:
MT49H16M18C
09005aef80a41b59/Source:
09005aef811ba111
2003Micron
MT49H16M18C
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PDF
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DDR12
Abstract: MPC8540 MPC8540CE DDR11 DDR10
Text: Freescale Semiconductor MPC8540CE Rev 0.2, 10/2004 Errata MPC8540 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8540 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.
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MPC8540CE
MPC8540
TSEC18/FEC18.
DDR11,
DDR12,
MPC8540
DDR12
MPC8540CE
DDR11
DDR10
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Untitled
Abstract: No abstract text available
Text: Am29BDS320G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29BDS320G
27243B0
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BDS320G 32 Megabit 2 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single 1.8 volt read, program and erase (1.65 to 1.95 volt) ■ Manufactured on 0.17 µm process technology
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Am29BDS320G
16-Bit)
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adr-301
Abstract: NIC-301 AMBA Network Interconnect NIC-301 Implementation Guide AMBA AXI to AHB BUS Bridge verilog code state diagram of AMBA AXI protocol v 1.0 AMBA AXI designer user guide verilog rtl code of Crossbar Switch AMBA AHB bus protocol AMBA AXI verilog code nic301
Text: CoreLink Network Interconnect NIC-301 Revision: r2p2 Technical Reference Manual Copyright 2006-2010 ARM. All rights reserved. ARM DDI 0397H ID080710 CoreLink Network Interconnect NIC-301 Technical Reference Manual Copyright © 2006-2010 ARM. All rights reserved.
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NIC-301
0397H
ID080710)
ID080710
32-bit
adr-301
NIC-301
AMBA Network Interconnect NIC-301 Implementation Guide
AMBA AXI to AHB BUS Bridge verilog code
state diagram of AMBA AXI protocol v 1.0
AMBA AXI designer user guide
verilog rtl code of Crossbar Switch
AMBA AHB bus protocol
AMBA AXI verilog code
nic301
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PDF
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Untitled
Abstract: No abstract text available
Text: Intel Xeon® Processor 7400 Series Specification Update December 2010 Reference Number: 320336-008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS
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maapplnots/317080
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S29WS128N
Abstract: sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N S70WS512N00 TSB084 sample code write buffer spansion SA047-SA050
Text: S70WS512N00 Based MCPs Same-Die Stacked Multi-Chip Product MCP 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S70WS512N00
S29WS128N
sample code read and write flash memory spansion
S29WS064N
S29WS256N
S29WS-N
TSB084
sample code write buffer spansion
SA047-SA050
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PDF
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MICRON BGA PART MARKING
Abstract: amd catalog MT49H32M18C
Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock
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576Mb:
MT49H32M18C
MT49H64M9C
09005aef80a41b59/Source:
09005aef811ba111
MICRON BGA PART MARKING
amd catalog
MT49H32M18C
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LG E500
Abstract: marking 53B MPC8560CE MPC8560 tsec application DDR12 MPC8560
Text: Freescale Semiconductor MPC8560CE Rev 0.2, 10/2004 Errata MPC8560 PowerQUICC III Device Errata This document details all known silicon errata for the MPC8560 PowerQUICC III device. It also includes errata for the e500 core. Table 1 provides a revision history for this document.
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MPC8560CE
MPC8560
TSEC18.
DDR11,
CPM13-16,
DDR12,
MPC8560
LG E500
marking 53B
MPC8560CE
MPC8560 tsec application
DDR12
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PDF
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TRANSISTOR BFW 11 pin diagram
Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst
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S29WSxxxN
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
S29WS256/128/064N
TRANSISTOR BFW 11 pin diagram
064N
S29WS064N
S29WS128N
S29WS256N
WS128N
pin diagram of TRANSISTOR BFW 11
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SA047
Abstract: No abstract text available
Text: S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst
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S29WS-N
S29WS256N,
S29WS128N,
S29WS064N
16-Bit)
S29WS256/128/064N
SA047
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PDF
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SA047
Abstract: No abstract text available
Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29WS064R
16-bit)
S29WS064R
SA047
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PDF
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MT49H32M18C
Abstract: No abstract text available
Text: 576Mb: x9, x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H32M18C – 32 Meg x 18 x 8 banks MT49H64M9C – 64 Meg x 9 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x18 at 533 MHz clock
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576Mb:
MT49H32M18C
MT49H64M9C
09005aef80a41b59/Source:
09005aef811ba111
MT49H32M18C
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)
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Am42BDS6408G
Am29BDS640G
16-Bit)
93-Ball
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Am54BDS128AGB89I
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am54BDS128AG Stacked Multi-Chip Package MCP Flash Memory and SRAM Two Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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Am54BDS128AG
Am29BDS640G
16-Bit)
93-Ball
FMA093--93-Ball
Am54BDS128AGB89I
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smd transistor marking HT1
Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization
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288Mb:
MT49H16M18C
09005aef815b2df8/Source:
09005aef811ba111
2003Micron
smd transistor marking HT1
MT49H16M18C
MICRON BGA PART MARKING
RLDRAM
smd MARKING dk
transistor SMD DK rc
A202
A212
A221
TN-00-08
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PDF
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Untitled
Abstract: No abstract text available
Text: Am29BDS640G Data Sheet October 1, 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29BDS640G
25903C1
25903C1
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am42BDS6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29BDS640G 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory and 8 Mbit (512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS • Power dissipation (typical values, CL = 30 pF)
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Am42BDS6408G
Am29BDS640G
16-Bit)
93-Ball
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PDF
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Untitled
Abstract: No abstract text available
Text: Am29BDS640G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
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Am29BDS640G
25903C0
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SA059
Abstract: 0x555 SA041 SA047
Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S29WS064R
16-bit)
S29WS064R
SA059
0x555
SA041
SA047
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PDF
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