Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to
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MRF6S27050H
MRF6S27050HR3
MRF6S27050HSR3
MRF6S27050HR3
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MOSFET J162
Abstract: CW12010T0050G
Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 1, 11/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to
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AFT26H160--4S4
AFT26H160-4S4R3
MOSFET J162
CW12010T0050G
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT26H160-4S4 Rev. 0, 7/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 32 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26H160--4S4
AFT26H160-4S4R3
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250GX-0300-55-22
Abstract: j6808 GRM32RR71H105KA01B 2508051107Y0 F 5M 365 R T491D106K050at A114 A115 AN1955 C101
Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to
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Original
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PDF
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MRF6S27050H
MRF6S27050HR3
MRF6S27050HSR3
MRF6S27050HR3
250GX-0300-55-22
j6808
GRM32RR71H105KA01B
2508051107Y0
F 5M 365 R
T491D106K050at
A114
A115
AN1955
C101
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