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FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100 Text: Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010N MW6S010NR1 MW6S010GNR1 FERRITE BEAD 1000 OHM 0805 A113 A114 A115 AN1955 C101 JESD22 MW6S010GNR1 CRCW12061001F100
MW6S010NR1 Abstract: A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 MW6S010MR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
FERRITE BEAD 1000 OHM 0805 Abstract: MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 2, 5/2006 Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1	Original	PDF	MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1 FERRITE BEAD 1000 OHM 0805 MW6S010NR1 A113 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
CRCW12061001F100 Abstract: MW6S010NR1 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1 MW6S010GNR1 Text: Freescale Semiconductor Technical Data Document Number: MW6S010 Rev. 1, 5/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier	Original	PDF	MW6S010 MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1 CRCW12061001F100 A114 A115 AN1955 C101 JESD22 MW6S010 MW6S010GMR1
Untitled Abstract: No abstract text available Text: Document Number: MW6S010 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor MW6S010MR1	Original	PDF	MW6S010 MW6S010NR1/GNR1. MW6S010MR1 MW6S010GMR1 MW6S010MR1