AS8525
Abstract: AS8510 lead acid battery SoC SSOP20 ETR10 D-709 AS8510-ASST TDA 6112 PT100 resistor
Text: Preliminary Data Sheet AS8510 D a t a A cq u is i t io n D ev ic e f o r B a t t e r y S e n s o r s 1 General Description Two high resolution 16 bit A/D converters with programmable over sampling ratio to enable sampling rates from typically 1kHz to below 1Hz
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AS8510
AS8510
com/AS8510
AS8525
lead acid battery SoC
SSOP20
ETR10
D-709
AS8510-ASST
TDA 6112
PT100 resistor
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CQ 419
Abstract: EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Text: Section III. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II GX devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation
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CQ 419
Abstract: EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Text: Section II. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation
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CQ 419
Abstract: CYPRESS CROSS REFERENCE dual port sram EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Text: Section III. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II GX devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation
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CQ 419
Abstract: EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Text: Section II. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation
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Xilinx spartan xc3s400_ft256
Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,
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UG086
DQS10
DQS11
DQS12
DQS13
DQS14
DQS15
DQS16
DQS17
Xilinx spartan xc3s400_ft256
XC3S400_FT256
XC3S400PQ208
XC3S250EPQ208
xc3s400TQ144
XC3S400FT256
xc3s1400afg676
XC3S700AFG484
XC3S500EPQ208
XC3S200FT256
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wheel speed sensor using 8051
Abstract: 80 L hall effect sensor ic wheel speed sensor Digital wheel Meter 4921-5U cd 4538 application notes TLE4921-5U AEA01590
Text: Application Notes 7.1.4 Differential Hall IC TLE4921-5U Applications • • • • Detection of rotational speed of ferromagnetic gear wheels Detection of rotational position Detection of rotational speed of magnetic encoder wheels Generation of trigger signals
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TLE4921-5U
TLE4921-5U
AED02066
AED01614
wheel speed sensor using 8051
80 L hall effect sensor ic wheel speed sensor
Digital wheel Meter
4921-5U
cd 4538 application notes
AEA01590
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87S3D
Abstract: HK-1-G
Text: 06/18/98 10:20 FAI 847 925 0899 TAIYO YUDEN CHICAGO 0019 No. T957F06 SPEC I F I CAT I O N I HIGfl-FKEQUENCY MULTI-LATTER CHIP INDUCTOR HK1608 TYPE SERIES TAIYO YUDEN CQ.LTDDATE: 21. Apr. 1997 T A IY S00003 06/18/98 10:20 FAX 847 925 0899 TAIYO YUDEN CHICAGO
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T957F06
HK1608
S00003
HK1608
87S3D
HK-1-G
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ITT 2222 A
Abstract: itt 2222
Text: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million
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CLA90000
84-ACB-2828
144-ACB-4040
208-ACB-4545
209-ACB-4545
ITT 2222 A
itt 2222
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5BA DIODE
Abstract: C2651 QSFCT651T
Text: QSFCT651T, 652T, 2651T, 2652T Q High Speed CMOS 8-bit Bus Interface Register Transceivers Q S 5 4 /7 4 F C T 6 5 1 T Q S 5 4 /7 4 F C T 6 5 2 T Q S 5 4 /7 4 F C T 2 6 5 1 T Q S 5 4 /7 4 F C T 2 6 5 2 T F E A T U R E S /B E N E F IT S • Pin and function compatible to the 74F651/2
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QSFCT651T,
2651T,
2652T
QS54/74FCT651T
QS54/74FCT652T
QS54/74FCT2651T
QS54/74FCT2652T
74F651/2
74FCT651/2
74FCT651T/2T
5BA DIODE
C2651
QSFCT651T
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Untitled
Abstract: No abstract text available
Text: ADVANCE |V|IC=RO N 2.5 V V dd, 256K x 18/128K x 36 HSTL, PIPE LINED C L A Y M O R E SRAM MT57V256H18P MT57V128H36P FEATURES • • • • Fast cycle times: 4.4ns, 5ns, 5.5ns, 6ns and 7ns 256K x 18 and 128K x 36 configurations Pipelined operation Single +2.5V ±0.1V power supply Vdd
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18/128K
18/126K
MT57V256H1
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CQ 419
Abstract: e9632 CXD1913Q TD10 xcs mp sony 506 cq419
Text: SONY CXD1 9 1 3 Q Digital Video Encoder I For the avaHaEiTitv of this product, please contact the sales office.I Description The CXD1913Q is a digital video encoder designed for set top box, digital VCRs and other digital video applications. The device accepts ITUR60f compatible Y, Cb, Cr data, and the data are
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CXD1913Q
CXD1913Q
ITU-R60Ã
8/16-bit
10-bit
400kHz)
64-pin
64PIN
QFP-64P-LQ1
CQ 419
e9632
TD10
xcs mp
sony 506
cq419
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TM497BBK32S
Abstract: Q 4.194 304 417400D TM893CBK32 TM893CBK32S
Text: TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE SMMS433-JANUARY1993 Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32 • Presence Detect • Performance Ranges:
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TM497BBK32,
TM497BBK32S
32-BIT
TM893CBK32,
TM893CBK32S
SMMS433-JANUARY1993
TM497BBK32
TM893CBK32
72-Pln
Q 4.194 304
417400D
TM893CBK32
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BDP 284
Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Text: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
Q62702-A829
Q62702-A859
Q62702-A950
Q62702-A952
Q62702-A608
Q62702-A718
Q62702-A687
BDP 284
BAV 217
Q62702-C2259
BAT 545
Q62702F1240
Q62702-A773
bdp 497
Q62702-C944
Q62702-D339
Q62702-C1529
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5V4R04J-12,-15,-20 • .im m . 1997.02 06 Notice- This is not a final specification. Som e parametric limits are subject to change Rev D 4194304-BIT 1048576-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M5M5V4R04J is a family of 1048576rword by 4-bit static
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M5M5V4R04J-12
4194304-BIT
1048576-WORD
M5M5V4R04J
1048576rword
32-pin
M5M5V4R04J-12
D03364T
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RC4195
Abstract: Thermalloy 6560 hp 2212 transistor sec 623 Thermalloy 6403 ierc heatsink 2N4905 RM4195 dual tracking voltage regulator 9 lead TO66
Text: Raytheon Electronics Sem iconductor D ivision ANALOG R C 4195 Fixed ±15V Dual Tracking Voltage Regulator Features • ±15V operational amplifier power at reduced cost and component density • Thermal shutdown at Tj = +175°C in addition to short circuit protection
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RC4195
RM/RC4195
100mA.
75173b0
75173fc
RC4195N
RC4195T
RC4195K
RC4195
Thermalloy 6560
hp 2212
transistor sec 623
Thermalloy 6403
ierc heatsink
2N4905
RM4195
dual tracking voltage regulator
9 lead TO66
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MN1610
Abstract: CQ 419 MN1630 MN1640 MN1650 panasonic minas BS12 panasonic cq vt BS05
Text: MN1610 - ? - o n n y \ í= L — j5> M N 1 6 1 0 1 6 tf- y b 1 6 ~ B it 1 I IS (3 2 § iJ B C h ip M i c r o p r o c e s s o r ( 3 - V o lta g e S u p p ly ) ^ /D e s c r ip tio n M N 16 10 i i , Unit I mm > * >v L O C O S >- ') =1 > r - N -f SaJSw
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MN1610
MN1610
MN1630,
MN1640.
MN1650
BUS11
CQ 419
MN1630
MN1640
panasonic minas
BS12
panasonic cq vt
BS05
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IC 74LS160
Abstract: 40163B equivalent 40160BC 40161bc D4016 D4016-2
Text: C D 40160B , C D 4 0 1 6 1 B , C D 40162B , C D 4 0 1 6 3 B T ypes 2 3 H A R R IS CD40160B — Decade with Asynchronous Clear CD40161B — Binary with Asynchronous Clear CD40162B — Decade with Synchronous Clear C D40163B — Binary with Synchronous Clear
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CD40160B
CD40161B
CD40162B
D40163B
40160B,
40161B,
40162B,
40163B
40162B
IC 74LS160
40163B equivalent
40160BC
40161bc
D4016
D4016-2
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Untitled
Abstract: No abstract text available
Text: Micro Linear ML541 Read Data Processor GENERAL DESCRIPTION FEATURES The ML541 is a monolithic bipolar integrated circuit for use in a disk drive system to detect analog pulse peaks generated by the recording head during a Read operation. Connected to the read/write amplifier output, it detects valid data and
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ML541
ML541
L541CP
L541CQ
ML541CS
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KC156A
Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Text: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:
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XapfaKOB-57,
KC156A
ky202e
K174XA2
KT809A
KT805A
KT610B
KP350A
KT808a
KT920A
KC213
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Device marking code 1m diode
Abstract: Diode marking CODE 1M Marking Code "1m" diode diode 1M MARKING CODE motorola diode marking code 141WK diode MARKING CODE jx cq 545 SQT-323 MU diode MARKING CODE
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diode M1MA141WKT1 M1MA142WKT1 Motorola Preferred D *v lc * This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the
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SC-70
M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA141WKT1
M1MA142WKT1
/SOT-323
M1MA142WKT1
Device marking code 1m diode
Diode marking CODE 1M
Marking Code "1m" diode
diode 1M MARKING CODE
motorola diode marking code
141WK
diode MARKING CODE jx
cq 545
SQT-323
MU diode MARKING CODE
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NEM085068-28
Abstract: NEM081
Text: CLASS AB/C, 860 MHz, 28 VOLT MATCHED TRANSISTOR NEM081568-28 NEM085068-28 NEM085068-28 OUTPUT POWER vs. FREQUENCY FEATURES • HIGH PO W ER A N D HIG H G A IN :f = 860 MHz, Class AB • NEM 081568-28: Po>41 dBm, G p>8 dB • NEM 085068-28: Po>46.2 dBm, G p>6.2 dB
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NEM081568-28
NEM085068-28
NEM085068-28
b427525
NEM081
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Untitled
Abstract: No abstract text available
Text: !TELEiYNE COMPONENTS d6£ D • aWbUd OOObStS I, m _ ~7 - s y - / 6 ,- / z . -fj*-TELEDYNE PHILBRICK ERRATA SHEET 4193/95 500NS MAX. 12-BIT A/D CONVERTER REV #1 2/88 2K CODE ON DATA SHEET / PIN DESIGNATIONS: . To read: PIN 6 ANALOGGROUND
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500NS
12-BIT
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65-0014-TR
Abstract: No abstract text available
Text: SW65-0014 M/A-OOM GaAs SPST Absorptive Switch with ASIC Driver DC - 3.0 GHz SOW-24 Features • Typical Isolation: 45 dB 2,000 MHz • Typical Insertion Loss: 1.5 dB (2,000 MHz) • Integral ASIC TTL/CMOS Driver • Plastic, 50 mil Pitch, SOW-24 Lead, Wide Body
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SW65-0014
SOW-24
24-lead
65-0014-TR
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