CMLD2838
Abstract: No abstract text available
Text: PROCESS CPD30V Central Dual Switching Diode TM Semiconductor Corp. Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size 15.4 X 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad Area 5.9 X 5.9 X 8.3 MILS Anode 2 Bonding Pad Area
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CPD30V
CMLD2838
28-September
CMLD2838
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Untitled
Abstract: No abstract text available
Text: PROCESS CPD30V Dual Switching Diode Dual, Common Cathode, High Speed Switching Diode Chip PROCESS DETAILS Die Size 15.4 x 15.4 MILS Die Thickness 7.1 MILS Anode 1 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Anode 2 Bonding Pad Area 5.9 x 5.9 x 8.3 MILS Top Side Metalization
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CPD30V
CMLD2838
29-April
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BF244 datasheet
Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216
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1N456
CPD64
1N456A.
1N457
1N457A.
1N458
BF244 datasheet
2N5133 equivalent
MPS5771
BD345
BD347
BF244
2n5248
bf256
2N3304
2n5910
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UJT 2n3904
Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
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