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Catalog Datasheet	MFG & Type	PDF	Document Tags
CFSH01-30L Abstract: No abstract text available Text: PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER	Original	PDF	CPD109R CFSH01-30L 13-April CFSH01-30L

Catalog Datasheet

MFG & Type

PDF

Document Tags

CFSH01-30L

Abstract: No abstract text available
Text: PROCESS CPD109R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER

Original

PDF

CPD109R CFSH01-30L 13-April CFSH01-30L