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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: PROCESS CPD106R Schottky Diode Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER	Original	PDF	CPD106R CTLSH01-30 20-April

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: PROCESS CPD106R Schottky Diode Schottky Diode Chip PROCESS DETAILS Die Size 8.3 x 8.3 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 5.4 x 5.4 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER

Original

PDF

CPD106R CTLSH01-30 20-April