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Catalog Datasheet	MFG & Type	PDF	Document Tags
CFSH2-3L Abstract: No abstract text available Text: PROCESS CPD104R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER	Original	PDF	CPD104R CFSH2-3L

Catalog Datasheet

MFG & Type

PDF

Document Tags

CFSH2-3L

Abstract: No abstract text available
Text: PROCESS CPD104R Schottky Diode Low VF Schottky Diode Chip PROCESS DETAILS Die Size 14.6 x 14.6 MILS Die Thickness 3.9 MILS Anode Bonding Pad Area 11.8 x 11.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER

Original

PDF

CPD104R CFSH2-3L