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Catalog Datasheet	MFG & Type	PDF	Document Tags
Small Signal MOSFET Abstract: No abstract text available Text: PROCESS CP759R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization	Original	PDF	CP759R CMRDM7590 13-May Small Signal MOSFET

Catalog Datasheet

MFG & Type

PDF

Document Tags

Small Signal MOSFET

Abstract: No abstract text available
Text: PROCESS CP759R Small Signal MOSFET P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 9.1 x 9.1 MILS Die Thickness 3.9 MILS Gate Bonding Pad Area 2.5 MILS DIAMETER Source Bonding Pad Area 3.9 x 3.9 MILS Top Side Metalization Al-Si - 30,000Å Back Side Metalization

Original

PDF

CP759R CMRDM7590 13-May Small Signal MOSFET