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    CP59 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CP591 Central Semiconductor Chip Form: SILICON TRANSISTOR Original PDF
    CP591V Central Semiconductor Small Signal Transistor PNP - Amp / Switch Transistor Chip Original PDF
    CP591X-2N2907A-CT Central Semiconductor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP AMP SWITCH CHIP 1=400 Original PDF
    CP591X-2N2907A-CT20 Central Semiconductor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 1=20PCS Original PDF
    CP592 Central Semiconductor Chip Form: SILICON TRANSISTOR Original PDF
    CP592V Central Semiconductor Small Signal Transistors PNP - Amp / Switch Transistor Chip Original PDF
    CP593 Central Semiconductor Small Signal Transistors PNP - Amp / Switch Transistor Chip Original PDF
    CP5949-000 TE Connectivity Uncategorized - Miscellaneous - D-500-9455-2-S36-096 Original PDF
    CP595 Central Semiconductor Chip Form: HIGH VOLTAGE TRANSISTOR Original PDF
    CP59A Essentra Components CENTER PULL-TAB PLUG - 46.2 MM Original PDF
    CP-59BK Bivar Card Guide Accessories, Boxes, Enclosures, Racks, CARD EJECTOR PCB 1.5" .094" BLK Original PDF
    CP-59 WE Bivar Boxes, Enclosures, Racks - Card Guide Accessories - CARD EJECTOR PCB 1.5" .094" WHT Original PDF
    CP-59WE Bivar Card Guide Accessories, Boxes, Enclosures, Racks, CARD EJECTOR PCB 1.5" .094" WHT Original PDF

    CP59 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2907A

    Abstract: 2N2905A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2907A die
    Text: PROCESS CP591X Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization


    Original
    CP591X 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 13-October 2N2907A 2N2905A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2907A die PDF

    2n3906

    Abstract: 2N3906 die CZT3906 2n3906 equivalent transistor transistor 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CP592V
    Text: PROCESS CP592V Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization


    Original
    CP592V 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906 2n3906 2N3906 die CZT3906 2n3906 equivalent transistor transistor 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CP592V PDF

    2N2907A die

    Abstract: 2N2907A PN2907A equivalent 2N2907A 2N2905A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A
    Text: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization


    Original
    CP591V 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 22-March 2N2907A die 2N2907A PN2907A equivalent 2N2907A 2N2905A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A PDF

    transistor 2n4403 equivalent

    Abstract: 2n4403 chip PNP 2N4403 transistor Transistor switch 2N4403 2N5366 CP593
    Text: PROCESS CP593 Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process Epitaxial Planar Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization


    Original
    CP593 2N4403 2N5366 transistor 2n4403 equivalent 2n4403 chip PNP 2N4403 transistor Transistor switch 2N4403 2N5366 CP593 PDF

    2N3906 die

    Abstract: 2N3906 CXT3906 CZT3906 2N3906 Central 2n3906 equivalent transistor CMPT3906 CMST3906 CP592 chip die pnp transistor
    Text: PROCESS CP592 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS


    Original
    CP592 2N3906 CMPT3906 CMST3906 CXT3906 CZT3906 11788PITAXIAL 2N3906 die 2N3906 CXT3906 CZT3906 2N3906 Central 2n3906 equivalent transistor CMPT3906 CMST3906 CP592 chip die pnp transistor PDF

    2N2907A die

    Abstract: PN2907A
    Text: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization


    Original
    CP591V 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 21-August 2N2907A die PDF

    2N4403

    Abstract: 2N5366 CP593 2n4403 chip
    Text: PROCESS CP593 Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 X 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 X 4.3 MILS Emitter Bonding Pad Area 3.5 X 4.5 MILS Top Side Metalization


    Original
    CP593 2N4403 2N5366 28-August 2N4403 2N5366 CP593 2n4403 chip PDF

    MPQ6700

    Abstract: 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 2N3904 2n3904 surface mount 2N3904 geometry MPQ6700 equivalent
    Text: PCN # 107 Notification Date: 29 June 2006 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Chip processes CP192V NPN and CP592V(PNP), small signal discrete semiconductors, wafers, and die in chip form.


    Original
    CP192V CP592V CP392V CP792V 2N3904 CMPT3904 CMST3904 CMUT3904 MPQ6700 2N3904 die 2N3906 die CP192-CMPT3904-CT CP592-2N3251-CT MPQ3904 2N3904 2n3904 surface mount 2N3904 geometry MPQ6700 equivalent PDF

    2N3906 die

    Abstract: 2n3906 equivalent transistor 2n3906 data sheet transistor 2n3906 CZT3906 CXT3906 PNP 2N3906 CMKT3906 2n3906 datasheet transistor 2N3906 datasheet
    Text: PROCESS CP592V Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization


    Original
    CP592V 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906 2N3906 die 2n3906 equivalent transistor 2n3906 data sheet transistor 2n3906 CZT3906 CXT3906 PNP 2N3906 CMKT3906 2n3906 datasheet transistor 2N3906 datasheet PDF

    2N4403

    Abstract: 2N5366 CP593 2n4403 chip
    Text: PROCESS CP593 Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization


    Original
    CP593 2N4403 2N5366 22-March 2N4403 2N5366 CP593 2n4403 chip PDF

    equivalent 2N2907A

    Abstract: 2N2905A 2N2907A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A PN2907A 2N2907A die
    Text: PROCESS CP591V Small Signal Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS Top Side Metalization


    Original
    CP591V 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A equivalent 2N2907A 2N2905A 2N2907A CMPT2907A CMST2907A CP591V CXT2907A CZT2907A PN2907A 2N2907A die PDF

    2N2907A die

    Abstract: CHIP TRANSISTOR 2n2905a 2N2905a equivalent ELECTRONIC TRANSISTOR CORP 2N2907A CMPT2907A CMST2907A CP591V CXT2907A
    Text: PROCESS CP591V Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS


    Original
    CP591V 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 31-May 2N2907A die CHIP TRANSISTOR 2n2905a 2N2905a equivalent ELECTRONIC TRANSISTOR CORP 2N2907A CMPT2907A CMST2907A CP591V CXT2907A PDF

    2N2905A

    Abstract: 2N2907A CMPT2907A CMST2907A CP591 CXT2907A CZT2907A PN2907A
    Text: PROCESS CP591 Central Small Signal Transistor TM Semiconductor Corp. PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19 x 19 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 3.5 x 4.3 MILS Emitter Bonding Pad Area 3.5 x 4.5 MILS


    Original
    CP591 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A 2N2905A 2N2907A CMPT2907A CMST2907A CP591 CXT2907A CZT2907A PN2907A PDF

    2N3906 die

    Abstract: 2N3906 CMPT3906 CXT3906 CZT3906 chip die pnp transistor
    Text: PROCESS CP592V Small Signal Transistors PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 12 x 20 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 3.6 X 3.6 MILS Emitter Bonding Pad Area 3.6 X 3.6 MILS Top Side Metalization


    Original
    CP592V 2N3906 CMKT3906 CMLT3906E CMPT3906 CMST3906 CXT3906 CZT3906 2N3906 die chip die pnp transistor PDF

    SiI7172

    Abstract: sil5744 SII9233 SII9125 SiI9233A SII9013 SIL5723 SiI7189 SiI9022A sil9002
    Text: DTV Products Enabling the secure delivery and presentation of high-quality HD content everywhere. PORT PROCESSORS Target Applications Input/Output Input Resolution HDCP TMDS EDID CEC Package Size Starter Kit SiI9181A Front panel of DTVs, A/V receivers,


    Original
    SiI9181A 480i/p, 1080i/p 225MHz 56-pin CP9181AHDMI SiI9185A SiI7172 sil5744 SII9233 SII9125 SiI9233A SII9013 SIL5723 SiI7189 SiI9022A sil9002 PDF

    02-06-1201

    Abstract: No abstract text available
    Text: PART NO. ENG. NO. I787-CP9 1 I787- P90 l)L I787-CP59 1) I787-(P59 l)L I787-(P550) I787-(P550)L 02-06-1201 0 2 -0 6 - 1202 02 -0 6 -5 2 0 5 0 2 -0 6 -5 2 0 6 02-06-5201 02 -0 6 -5 2 0 2 OBSOLETE (3.20) OBSOLETE CARRIER VIEW ACTUAL SIZE (.25) T 0 ^ m axCARRIER CUTOFF


    OCR Scan
    I787-CP9© I787-CP59 l787-( -IP558) -IP5581L SD-1787- 02-06-1201 PDF

    3906 TRANSISTOR

    Abstract: transistor pnp 3906 small signal transistor marking codes
    Text: Central CMKT3904 NPN/NPN CMKT3906 PNP/PNP CMKT3946 NPN/PNP Semiconductor Corp. SURFACE MOUNT ULTRAmini™ DUAL SMALL SIGNAL SILICON SWITCHING TRANSISTORS FEATURES: • ULTRAmini™ SPACE SAVING PACKAGE • TWO NPN 3904 or TWO PNP (3906) TRANSISTORS IN A SINGLE PACKAGE


    OCR Scan
    CMKT3904 CMKT3906 CMKT3946 CMKT3904 CMKT3906 CMKT3946 OT-363 3906 TRANSISTOR transistor pnp 3906 small signal transistor marking codes PDF

    KI 2222A

    Abstract: transistor 2222a sot-363 MARKING l0
    Text: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar


    OCR Scan
    CMKT2207 OT-363 150mA, KI 2222A transistor 2222a sot-363 MARKING l0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS MAXIMUM RATINGS: DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary


    OCR Scan
    CMLT2207 2N2222A 2N2907A OT-563 x10-4 OT-563 13-November PDF

    C2F transistor pnp

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CMPT2907A DESCRIPTION: The Central Semiconductor CMPT2907A type is a PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal general purpose and switching applications.


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    CMPT2907A OT-23 150mA, C2F transistor pnp PDF

    Untitled

    Abstract: No abstract text available
    Text: Central" CXT2907A semiconductor Corp. SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal


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    CXT2907A OT-89 150mA, OT-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Centrar CMPT3904E NPN CMPT3906E PNP Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906 complementary switching transistors in a SOT-23 surface mount package,


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    CMPT3904E CMPT3906E CMPT3904E CMPT3904, CMPT3906 OT-23 CMPT3906E) CMPT3904E) PDF

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMST2907A Semiconductor Corp. SURFACE MOUNT SUPERmini PNP SILICON TRANSISTOR DESCRIPTION: The Central Semiconductor CMST2907A type is a PNP silicon transistor manufactured by the epi­ taxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed


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    CMST2907A OT-323 150mA, 150mAt 150mA- OT-323 PDF

    LB-215

    Abstract: No abstract text available
    Text: Central" CMXT2907A Semiconductor Corp. SURFACE MOUNT SUPERmini DUAL PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT2907A type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount package, designed for


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    CMXT2907A OT-26 CP591 06-August OT-26 LB-215 PDF