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Catalog Datasheet	MFG & Type	PDF	Document Tags
cmlt3820g Abstract: CMPT3820 CXT3820 TRANSISTOR 536 Text: PROCESS CP382X Small Signal Transistor NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization	Original	PDF	CP382X CMLT3820G CMPT3820 CXT3820 cmlt3820g CMPT3820 CXT3820 TRANSISTOR 536

Catalog Datasheet

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cmlt3820g

Abstract: CMPT3820 CXT3820 TRANSISTOR 536
Text: PROCESS CP382X Small Signal Transistor NPN - Low VCE SAT Transistor Chip PROCESS DETAILS Die Size 26 x 26 MILS Die Thickness 5.9 MILS Base Bonding Pad Area 5.5 x 5.5 MILS Emitter Bonding Pad Area 5.5 x 5.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

Original

PDF

CP382X CMLT3820G CMPT3820 CXT3820 cmlt3820g CMPT3820 CXT3820 TRANSISTOR 536