IRG4PC30FD
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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91460B
IRG4PC30FD
O-247AC
O-247AC
IRG4PC30FD
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IRG4RC10UD
Abstract: No abstract text available
Text: PD 91571A IRG4RC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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1571A
IRG4RC10UD
O-252AA
140ns
IRG4RC10UD
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IRG4BC30UD
Abstract: No abstract text available
Text: PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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91453B
IRG4BC30UD
O-220AB
o52-7105
IRG4BC30UD
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IRG4BC30FD
Abstract: diode bridge LT 405
Text: PD -91451B IRG4BC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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-91451B
IRG4BC30FD
O-220AB
IRG4BC30FD
diode bridge LT 405
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401m8
Abstract: blu-ray mitsumi Switching Power Supply dvd
Text: MITSUMI 3ch HD-capable Video Amplifier IC MM1794 3ch HD-capable Video Amplifier IC Monolithic IC MM1794 April 28, 2009 Outline This IC is a wide bandwidth 75Ω driver IC compatible with D3 1080i that was developed for small mobile devices. Since it is compatible with dual power supplies, an output coupling copacitor is not required, which
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MM1794
1080i)
SQFN-16
401m8
blu-ray
mitsumi Switching Power Supply dvd
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IRG4PH40UD
Abstract: IGBTs
Text: PD- 91621B IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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91621B
IRG4PH40UD
O-247AC
IRG4PH40UD
IGBTs
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AN-994
Abstract: IRG4BC15UD-L IRG4BC15UD-S
Text: PD - 94083A IRG4BC15UD-S IRG4BC15UD-L INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT C Features • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching • IGBT Co-packaged with ultra-soft-recovery
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4083A
IRG4BC15UD-S
IRG4BC15UD-L
from10
O-262
AN-994.
AN-994
IRG4BC15UD-L
IRG4BC15UD-S
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Untitled
Abstract: No abstract text available
Text: 60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block copackages two pairs of high performance control and synchronous MOSFETs and is ideal for use in highdensity two-phase synchronous buck converters. It is optimized internally for PCB layout, heat transfer and
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IRF3546
IRF3546
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IRG4PH50UDPBF
Abstract: 135ns 035H IRFPE30
Text: PD -95190 IRG4PH50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter
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IRG4PH50UDPbF
O-247AC
IRFPE30
IRG4PH50UDPBF
135ns
035H
IRFPE30
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IRG4PC40UD
Abstract: transistor igbt
Text: PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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1467D
IRG4PC40UD
O-247AC
IRG4PC40UD
transistor igbt
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IRG4PC30FD
Abstract: No abstract text available
Text: PD 91460B IRG4PC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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91460B
IRG4PC30FD
O-247AC
O-247AC
IRG4PC30FD
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LTA 702 N
Abstract: C702 diode C703 diode diode c706 transistor c708 C706 diode DIODE C705 C705 diode transistor ge 703 IRGBC30UD2
Text: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGBC30UD2
O-220AB
C-708
LTA 702 N
C702 diode
C703 diode
diode c706
transistor c708
C706 diode
DIODE C705
C705 diode
transistor ge 703
IRGBC30UD2
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igbt 500V 15A
Abstract: transistor C398 C397 C398 transistor IRGPC40MD2
Text: Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPC40MD2
10kHz)
O-247AC
C-398
igbt 500V 15A
transistor C398
C397
C398 transistor
IRGPC40MD2
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Untitled
Abstract: No abstract text available
Text: IXA12IF1200TC preliminary I C25 = = VCES VCE sat typ = XPT IGBT Copack 20 A 1200 V 1.8 V C (2) Part number IXA12IF1200TC (G) 1 E (3) Features / Advantages: Applications: Package: ● Easy paralleling due to the positive temperature coefficient of the on-state voltage
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IXA12IF1200TC
60747and
20110330a
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600V 25A Ultrafast Diode
Abstract: Diode 188 IRGPC40KD2
Text: PD - 9.1114 IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes
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IRGPC40KD2
O-247AC.
O-247AD)
O-247AC
600V 25A Ultrafast Diode
Diode 188
IRGPC40KD2
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AN-994
Abstract: EIA-541 IRG4RC10SD inverter circuit 200v to 100v
Text: PD-91678B IRG4RC10SD Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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PD-91678B
IRG4RC10SD
O-252AA
EIA-481
EIA-541.
EIA-481.
AN-994
EIA-541
IRG4RC10SD
inverter circuit 200v to 100v
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C397
Abstract: IRGPC40MD2
Text: Preliminary Data Sheet PD - 9.1084 IRGPC40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses
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IRGPC40MD2
10kHz)
O-247AC
C-398
C397
IRGPC40MD2
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IRG4PC30UD
Abstract: No abstract text available
Text: PD 91462B IRG4PC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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91462B
IRG4PC30UD
O-247AC
O-247AC
IRG4PC30UD
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diode C721
Abstract: transistor C717 transistor C719 diode C722 transistor C721 diode c723 c721 diode C720 transistor C718 c719 diode
Text: PD - 9.808A IRGPC40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGPC40UD2
O-247AC
C-724
diode C721
transistor C717
transistor C719
diode C722
transistor C721
diode c723
c721
diode C720
transistor C718
c719 diode
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MICROCAP
Abstract: MC300 capacitor 0.1 50v MC205 XC-01 MC203 MC302 MC303 capacitor characteristics MC301
Text: EASTRON CORP 4GE Eastron M IC R O - C A P D • 3 D 7 4 H74 0000127 1 ■ EAS T-cn-IR W i pf to 5 pf V o l t a i « V a r ia b le S a p a c it o r CHARACTERISTICS AND RATINGS ? 25 C Copacity d V n * 4VJc Typ« Minimum Saturation Maximum Voltage i Inveri»
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MC70I
MC203
MC205
MC300
MC302
MC303
MICROCAP
capacitor 0.1 50v
XC-01
capacitor characteristics
MC301
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Untitled
Abstract: No abstract text available
Text: 1 SPECIFICATION 53 *o, a D 6,3.o CO Mating Cyc1es 500 F i l t e r type C Copac i tonce 470pf±20% Working Vo 1toge 10Ov Current Rot ing 7.5A Insulat ion Resistance >1GQ FREQUENCY MHz 0 , 8 -° Csl ATTENUATION IdB) 5 PCB Layout, Component side PCB thickness 1.6 mm
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470pfÂ
8-JUL-02
F-95972
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION D Moling Cycles 500 F iller C type Copac i tonce 3900p f ±20% Working Vo 1tage lOOv Current Roting 7.5A 1nsu1at i on Res i s tonce >1GQ FREQUENCY MHz -t 1 10 11 dB 50 25dB 100 3 5 dB 500 35dB 1000 32 dB CO CO 1 6dB 5 Solder buckets for AWG 20 Mox
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3900p
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Untitled
Abstract: No abstract text available
Text: 1 SPECIFICATION 53 *0.t D Nut thread Mot ing Cycles 500 F ilter C type Copac i tonce 470p f ±20% Working Vo 1toge 10Ov Current Rot ing 7.5A Insulot ion Resistance >1Gn FREQUENCY MHz ATTENUATION IdB) 5 PCB Layout, Component si de , thickness 1,6 mm - 10
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8-JUL-02
F-95972
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION D 6 .,0 .3 Moling Cyc1es 500 F iller C type Copac i tonce 470pf±20* Working Vo 1toge 10Ov Current Rating 7.5A 1nsu1at ion Resistance >1GQ v— 0,9" FREQUENCY [MHz] 0.2 5 Solder buckets for AWG 20 Mox ATTENUATION IdB - 10 IdB 50 10dB 100 15dB
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470pfÂ
F-95972
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