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    spg30n60

    Abstract: 2kW flyback PFC 2kw pfc coolmos pspice model power BUZ 20A 600V coolmostm lorenz ISPSD n mosfet depletion pspice model parameters 2kw mosfet SPP07N60S5 SPP20N60S5
    Text: COOLMOS - a new milestone in high voltage Power MOS* L. Lorenz, G. Deboy, A. Knapp and M. März Siemens AG, Semiconductor Division, Balanstr. 73, 81541 Munich, Germany I. INTRODUCTION Recently a new technology for high voltage Power MOSFETs has been introduced – the CoolMOS™. Based on the new


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    JFET siced

    Abstract: SiC-JFET siced SiC jfet cascode SiC JFET cascode mosfet switching SiC-JFET* JFET siced SiC-JFET comparison modern power device concepts high normally off SiC-JFET cascode mosfet switching thermal perfomance SiC IGBT IGBT THEORY AND APPLICATIONS
    Text: A comparison of modern power device concepts for high voltage applications: Field stop-IGBT, compensation devices and SiC devices G. Deboy, H. Hüsken, H. Mitlehner* and R. Rupp Infineon AG, P.O. Box 80 09 49, 81609 Munich, Germany *SICED Electronics Development, Paul-Gossenstr. 100, 91052 Erlangen, Germany


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