2SC4509
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC4509 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage ,high speed switching ・Low collector saturation voltage APPLICATIONS ・Switching regulators ・DC-DC convertors ・Solid state relay
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2SC4509
2SC4509
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FAV36B0804K-FAV36B0624K--
Abstract: No abstract text available
Text: Medium Power Film Capacitors FAV General Description TUNING APPLICATIONS High reactive energy tuning for convertors. Protection of semi-conductors. TECHNOLOGY Metallized polypropylene film and metal foil. Dry capacitor. PACKAGING Rectangular resin case. 4 leads 1.2 x 0.8mm for printed circuit board mounting.
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FAV36K0125K-FAV36K0105K--
FAV36B0804K-FAV36B0624K--
FAV36L0564K-FAV36L0474K--
FAV36U0334K-FAV36U0274K--
FAV36R0184K-FAV36R0154K--
FAV36N0124K-FAV36N0104K-FAV36N0803K--
FAV36B0804K-FAV36B0624K--
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2SC4510
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC4510 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage ,high speed switching ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertors ·Solid state relay
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2SC4510
2SC4510
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Untitled
Abstract: No abstract text available
Text: RFP8P10 Data Sheet 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Title This P-Channel enhancement mode silicon gate power field FP8 effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, 0 relay drivers, and drivers for high power bipolar switching
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RFP8P10
TA17511.
TB334
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CRZ0524NC
Abstract: RZC12N25 rzc15n20 RZC05N50 RZC05N35 RZC12W20 RZC15P20 RZ-12W CRZ0512NC CRZ0505NC
Text: 1/3 001-03 / 20030611 / ea331_crz.fm Power Supplies CRZ Series DC to DC Convertors Non-insulation, DIP Type SPECIFICATIONS AND STANDARDS BUILT-IN OUTPUT CAPACITOR Part No. Maximum output power Input conditions Input voltage Edc Efficiency∗1 Output characteristics and others
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CRZ0305PC
CRZ0312PC
CRZ0505NC
CRZ0512PC
CRZ0512NC
70typ.
65typ.
75typ.
CRZ0524NC
RZC12N25
rzc15n20
RZC05N50
RZC05N35
RZC12W20
RZC15P20
RZ-12W
CRZ0512NC
CRZ0505NC
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UAF3000
Abstract: ku-band pll lnb lnb ku SEI FSCM ro4223 RF LNA 10 GHz LNA 10.70 to 12.75 GHz 9.75 GHz or 10.6 GHz JESD625-a LNA Mixer VCO 2.4 GHz
Text: TFF1004HN/N1 Integrated mixer oscillator PLL for satellite LNB Rev. 01 — 25 August 2008 Product data sheet 1. General description The TFF1004HN/N1 is an integrated downconverter for use in Low Noise Block LNB convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.
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TFF1004HN/N1
TFF1004HN/N1
JESD625-A
TFF1004HN
UAF3000
ku-band pll lnb
lnb ku
SEI FSCM
ro4223
RF LNA 10 GHz
LNA 10.70 to 12.75 GHz
9.75 GHz or 10.6 GHz
LNA Mixer VCO 2.4 GHz
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Untitled
Abstract: No abstract text available
Text: 2SC4510 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-3PF Features High voltage,High speed switching Low saturation voltage High reliability Applications Switching regulators DC-DC convertors Solid state relay
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2SC4510
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RZC05N50
Abstract: RZC12N25 CRZ0515PC RZC15W16
Text: 1/3 001-03 / 20030827 / ea331_crz.fm CRZ Series Power Supplies DC to DC Convertors Non-insulation, DIP Type SPECIFICATIONS AND STANDARDS BUILT-IN OUTPUT CAPACITOR PART NO. CRZ0305PC CRZ0312PC Maximum output power W 0.5 0.5 INPUT CONDITIONS Input voltage Edc
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CRZ0305PC
CRZ0312PC
70typ.
300typ.
CRZ0505NC
CRZ0512PC
CRZ0512NC
65typ.
RZC05N50
RZC12N25
CRZ0515PC
RZC15W16
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flyback transformer philips
Abstract: FLYBACK CLAMPING DIODE top225 SOD89 flyback snubber VIPER50 application note TOP221 TOP227Y equivalent VIPER100 Application Note TOP201
Text: Crop here for Mid-Atlantic paper size DISCRETE SEMICONDUCTORS APPLICATION NOTE ZenBlockTM Zener with integrated blocking diode TM Philips Semiconductors' new ZenBlock replaces double-diode-, RCD- or RC-snubbers in flyback convertors. The new components offer circuit designers the important benefits of lower component
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MBL157
flyback transformer philips
FLYBACK CLAMPING DIODE
top225
SOD89
flyback snubber
VIPER50 application note
TOP221
TOP227Y equivalent
VIPER100 Application Note
TOP201
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SSF*7510
Abstract: SSF7510 p-n junction diode ssf75 3150 mosfet N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V 57AVDD
Text: SSF7510 Feathers: ID=75A Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test BV=75V Rdson=10mohm
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SSF7510
10mohm
SSF7510
SSF*7510
p-n junction diode
ssf75
3150 mosfet
N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
57AVDD
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Untitled
Abstract: No abstract text available
Text: 19-6340; Rev 0; 5/12 MAX54X Evaluation Kit Evaluates: MAX541/MAX542 General Description The MAX54X evaluation kit EV kit provides a proven design to evaluate the MAX541/MAX542 serial-input, voltage-output, 16-bit digital-to-analog convertors (DACs). The EV kit also includes Windows XPM-, Windows VistaM-,
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MAX54X
MAX541/MAX542
MAX541/MAX542
16-bit
MAX6126)
MAX9632
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Untitled
Abstract: No abstract text available
Text: F91 Series Low ESR, Resin-Molded Chip J-Lead FEATURES • Compliant to the RoHS2 directive 2011/65/EU • SMD J-lead • Low ESR LEAD-FREE COMPATIBLE COMPONENT APPLICATIONS • General medium power DC/DC convertors L CASE DIMENSIONS: millimeters inches W1
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2011/65/EU
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Untitled
Abstract: No abstract text available
Text: TFF1018HN Integrated mixer oscillator PLL for satellite LNB Rev. 2 — 7 December 2011 Product data sheet 1. General description The TFF1018HN/N1 is an integrated downconverter for use in Low Noise Block LNB convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.
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TFF1018HN
TFF1018HN/N1
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TFF1015
Abstract: No abstract text available
Text: TFF1015HN/N1 Integrated mixer oscillator PLL for satellite LNB Rev. 1 — 12 September 2011 Product data sheet 1. General description The TFF1015HN/N1 is an integrated downconverter for use in Low Noise Block LNB convertors in a 10.7 GHz to 12.75 GHz Ku band satellite receiver system.
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TFF1015HN/N1
TFF1015HN/N1
TFF1015HN
TFF1015
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED DIFFERENTIAL ^ NJM360 The NJM360 is a very high speed differential input, complementaly TTL output voltage comparator. The device has been optimized for greater speed, input impedance and fan-out and lower input offset voltage. Applications involve high speed analog to digital convertors and zero-crossing detectors in disc file systems.
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NJM360
500mW
300mW
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Untitled
Abstract: No abstract text available
Text: B T & »TECHNOLOGIES 4SE B • HflSOfl3 00000Ô2 b B B T D T T - H I - 7 -f t- LST0400-FC-A SINGLEMODE CONNECTORIZED ELED Features Applications I ■ Optical data communication transmitters 1300 nm singlemode ■ Hermetic construction ■ E -0 convertors
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LST0400-FC-A
LSC0400-FC-A
LST0400-FC-A
LST0500-ST-F
LST2400-PT
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DS-102
Abstract: No abstract text available
Text: B T & D T E CH N O L O G I E S SSE D • 11Ö50Ö3 DDDD417 bB7 ■BTDT T - H I - S 3 T E C H N O L O G I E S PDT1X4X PIGTAILED PIN PHOTODIODES Features: Applications: • Variety of flange/pinout options • Instrumentation • Fiber Pigtail Options • O-E Convertors
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DDDD417
DS102
DS-102
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AN7254
Abstract: RFP12P08 RFP12P10 TB334 TA17511
Text: RFP12P08, RFP12P10 Semiconductor June 1999 Data Sheet • 12A, 80V and 100V The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers
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80Vand
RFP12P08,
RFP12P10
TA17511.
RFP12P08
O-220AB
RFP12P08
RFP12P10
AN7254
TB334
TA17511
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JU L Y 94_ FEATURES * 60 Volt V,DS ^DS on - 0 ,3 3 fl Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER
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Tamtp25Â
0Q1Q354
001G35S
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2N4240
Abstract: 2N3583 2N3584 2N3585 2N6420 2N6421 2N6422 2N6423 2N6420-2N6421
Text: COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS NPN 2N3583 2N3584 2N3585 2N4240 . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators,convertors, deflection stages and high fidelity amplifiers.
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2N3583
2N6420
2N3584
2N6421
2N3585
2N6422
2N4240
2N6423
2N6420-2N6421
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TF-450
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching
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ZTX1047A
NY11725
JS70S7Ã
TF-450
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Untitled
Abstract: No abstract text available
Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -J U L Y 94_ FEATURES * 60 Volt VDS * * Spice model available APPLICATIONS * DC-DC convertors * Solenoids / relay drivers for automotive ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL
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V04KTW
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ZTX792A
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IS S U E 2 - A P R IL 94_ FEATURES « 70 Volt V CE0 * Gain of 400 at lc=3 A m ps * Very low saturation voltage APPLICATIO N S * * Darlington replacement Flash gun convertors
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-50mA,
50MHz
-500mA,
-50mA
ZTX792A
ZTX792A
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Untitled
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors
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cH7Q57Ã
0Q1Q354
001G35S
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