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    COMPONENT OF 30W AMPLIFIER Search Results

    COMPONENT OF 30W AMPLIFIER Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    COMPONENT OF 30W AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    amplifier 900mhz

    Abstract: No abstract text available
    Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS130501 amplifier 900mhz

    component of 30w amplifier

    Abstract: XP9003-MB P9003-MB XP9003-MB-0N00 qam circuit
    Text: 1.6 GHz 30W Power Amplifier Module May 2009 - Rev 12-May-09 P9003-MB Features Peak-Envelope Power, 30W with Pulsed Signal 3W Linear Power 38 dB Gain 9V Positive Voltage Supply Fully Matched Internally Thermally Efficient for Higher MTTF Balanced Output Construction


    Original     		PDF 12-May-09 P9003-MB 40x36mm XP9003-MB equip-MB-0N00 XP9003-MB-EV1 component of 30w amplifier P9003-MB XP9003-MB-0N00 qam circuit

    ZENER DIODE 5.1V

    Abstract: CAPACITOR 33PF DB-55035S-930 SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S
    Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1


    Original     		PDF DB-55035S-930 PD55035S DB-55035S-930 ZENER DIODE 5.1V CAPACITOR 33PF SMD Transistor 30w NV SMD TRANSISTOR 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S

    XP9003-MB

    Abstract: XP9003-MB-0N00 P9003-MB qam circuit AVR QPSK
    Text: 1.6 GHz 30W Power Amplifier Module P9003-MB March 2010 - Rev 31-Mar-10 Features Peak-Envelope Power, 30W with Pulsed Signal 3W Linear Power 38 dB Gain 9V Positive Voltage Supply Fully Matched Internally Thermally Efficient for Higher MTTF Balanced Output Construction


    Original     		PDF P9003-MB 31-Mar-10 40x36mm XP9003-MB XP9003-MB-0N00 P9003-MB qam circuit AVR QPSK

    AVR QPSK

    Abstract: XP9003 qam circuit
    Text: 1.6 GHz 30W Power Amplifier Module February 2009 - Rev 10-Feb-09 P9003 Features Peak-Envelope Power, 30W with Pulsed Signal 3W Linear Power 38 dB Gain 9V Positive Voltage Supply Fully Matched Internally Thermally Efficient for Higher MTTF Balanced Output Construction


    Original     		PDF 10-Feb-09 P9003 40x36mm XP9003 XP9003-EV1 AVR QPSK qam circuit

    PD55035S

    Abstract: No abstract text available
    Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1


    Original     		PDF DB-55035S-930 PD55035S DB-55035S-930

    Untitled

    Abstract: No abstract text available
    Text: MPQ7731 5W - 30W Class D Mono Bridged Audio Amplifier Available in AEC-Q100 DESCRIPTION FEATURES The MPQ7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which dramatically reduces solution size by integrating


    Original     		PDF MPQ7731 AEC-Q100 MPQ7731 AEC-Q100 TSSOP20F

    Untitled

    Abstract: No abstract text available
    Text: MPQ7731 5W - 30W Class D Mono Bridged Audio Amplifier Available in AEC-Q100 DESCRIPTION FEATURES The MPQ7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which dramatically reduces solution size by integrating


    Original     		PDF MPQ7731 AEC-Q100 MPQ7731 AEC-Q100 TSSOP20F

    55035

    Abstract: 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S PD55035 930 diode smd
    Text: DB-55035S-930 RF POWER amplifier using 1 x PD55035S N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 890 - 930 MHz ■ Supply voltage: 13.6V ■ Output power: 30W ■ Efficiency: 47% - 56% ■ Load mismatch: 10:1


    Original     		PDF DB-55035S-930 PD55035S DB-55035S-930 55035 3214W-1-103E BZX284C5V1 EEVHB1V100P JESD97 PD55035S PD55035 930 diode smd

    ATC100B

    Abstract: transistor amplifier a05t GM-1 A05T MAPLST2122-030CF
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 4/6/2005 MAPLST2122-030CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.


    Original     		PDF MAPLST2122-030CF 28VDC, -45dBc 096MHz) 2110MHz) ATC100B transistor amplifier a05t GM-1 A05T MAPLST2122-030CF

    Untitled

    Abstract: No abstract text available
    Text: RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 30W, 28V 2/18/03 MAPLST2122-030WF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications.


    Original     		PDF MAPLST2122-030WF 28VDC, -45dBc 096MHz) 2110MHz)

    MP7731DF-LF-Z

    Abstract: ic audio 5w 8 pin mosfet audio amplifier circuit EV0045 MP7731 MP7731DF MBRS130LTR 12v mosfet mono high power circuit
    Text: MP7731 5W - 30W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology DESCRIPTION FEATURES The MP7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which dramatically


    Original     		PDF MP7731 MP7731 MO-153, MP7731DF-LF-Z ic audio 5w 8 pin mosfet audio amplifier circuit EV0045 MP7731DF MBRS130LTR 12v mosfet mono high power circuit

    12v power amplifier 30w

    Abstract: MP7731 mosfet amplifier power mosfet audio amplifier EV0045 MP7731DF 8 pin class d mono power amplifier ic audio 5w 8 pin 30/ic audio 5w 8 pin
    Text: MP7731 5W - 30W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology DESCRIPTION FEATURES The MP7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which dramatically


    Original     		PDF MP7731 MP7731 MO-153, 12v power amplifier 30w mosfet amplifier power mosfet audio amplifier EV0045 MP7731DF 8 pin class d mono power amplifier ic audio 5w 8 pin 30/ic audio 5w 8 pin

    1800 ldmos

    Abstract: electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier
    Text: RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 30W, 26V 5/14/04 MAPLST1820-030CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier


    Original     		PDF MAPLST1820-030CF 1805-1880MHz 1930-1990MHz 1900MHz) P-237 1800 ldmos electrolytic capacitor 470 P-237 MAPLST1820-030CF component of 30w amplifier

    MPQ7731

    Abstract: 5v 5W mono AMPLIFIER power mosfet ic for audio amplifier aec-q100 001 12v mosfet mono high power circuit ic audio 5w 8 pin 30W AUDIO AMPLIFIER 12v power amplifier 30w MPS top marking AB 30/ic audio 5w 8 pin
    Text: MPQ7731 5W - 30W Class D Mono Bridged Audio Amplifier AEC-Q100 Qualified The Future of Analog IC Technology DESCRIPTION FEATURES The MPQ7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which


    Original     		PDF MPQ7731 AEC-Q100 MPQ7731 MO-153, 5v 5W mono AMPLIFIER power mosfet ic for audio amplifier aec-q100 001 12v mosfet mono high power circuit ic audio 5w 8 pin 30W AUDIO AMPLIFIER 12v power amplifier 30w MPS top marking AB 30/ic audio 5w 8 pin

    MP7731DF-LF-Z

    Abstract: 12v power amplifier 30w MP7731DF
    Text: MP7731 5W - 30W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology DESCRIPTION FEATURES The MP7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which dramatically


    Original     		PDF MP7731 MP7731 MO-153, MP7731DF-LF-Z 12v power amplifier 30w MP7731DF

    Untitled

    Abstract: No abstract text available
    Text: MP7731 5W - 30W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology DESCRIPTION FEATURES The MP7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which dramatically


    Original     		PDF MP7731 MP7731 MO-153,

    MP7731DF

    Abstract: MP7731 MBRS130LTR 67REF
    Text: MP7731 5W - 30W Class D Mono Bridged Audio Amplifier The Future of Analog IC Technology DESCRIPTION FEATURES The MP7731 is a mono, 5W - 30W Class D Audio Amplifier. It is one of MPS’ second generation of fully integrated audio amplifiers which dramatically


    Original     		PDF MP7731 MP7731 topolo002( MP7731DF MBRS130LTR 67REF

    ice3b0665j

    Abstract: ICE3BR0665J ice3b0665 AN-EVALSF3R-ICE3BR0665J Er28 bobbin smd code r5a ICE3BR0665 smd diode r5a DSP-301N ICE3BRXX65J
    Text: Application Note, V1.1, Jul 2009 AN-EVALSF3R-ICE3BR0665J 30W 16V SMPS Evaluation Board with CoolSET F3R ICE3BR0665J Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2009-07-07 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,


    Original     		PDF AN-EVALSF3R-ICE3BR0665J ICE3BR0665J ICE3BR0665J ICE3BRxx65J ice3b0665j ice3b0665 AN-EVALSF3R-ICE3BR0665J Er28 bobbin smd code r5a ICE3BR0665 smd diode r5a DSP-301N

    ice3b0665j

    Abstract: ice3br0665j ice3b0665 DSP-301N 107 16V epcos schematic SMPS 24V 2.5a Er28 bobbin 22nf 275v box capacitor amplifier circuit diagram class E 30w DSP-301N-S008
    Text: Application Note, V1.1, Aug 2010 AN-EVAL3BR0665J 30W 16V SMPS Evaluation Board with CoolSET F3R ICE3BR0665J Power Management & Supply N e v e r s t o p t h i n k i n g . Edition 2010-08-11 Published by Infineon Technologies Asia Pacific, 8 Kallang Sector,


    Original     		PDF AN-EVAL3BR0665J ICE3BR0665J ICE3BR0665J ICE3BRxx65J ice3b0665j ice3b0665 DSP-301N 107 16V epcos schematic SMPS 24V 2.5a Er28 bobbin 22nf 275v box capacitor amplifier circuit diagram class E 30w DSP-301N-S008

    audio power amplifier 25w 8ohm

    Abstract: N4701 30w audio amplifier circuit diagram
    Text: LM4701 Overture Audio Power Amplifier Series 30W Audio Power Amplifier with Mute and Standby Modes General Description Key Specifications The LM4701 is an audio power amplifier capable of delivering typically 30W of continuous average output power into an


    Original     		PDF LM4701 LM4701, O-220 20kHz 5-Aug-2002] audio power amplifier 25w 8ohm N4701 30w audio amplifier circuit diagram

    lm4766

    Abstract: dual audio amplifier circuit diagram 2 x 1w audio amplifier circuit diagram
    Text: LM4766 Overture Audio Power Amplifier Series Dual 40W Audio Power Amplifier with Mute General Description Key Specifications The LM4766 is a stereo audio amplifier capable of delivering typically 40W per channel with the non-isolated ’T’ package and 30W per channel with the isolated ’TF’ package of


    Original     		PDF LM4766 LM4766, 15-lead O-220 5-Aug-2002] dual audio amplifier circuit diagram 2 x 1w audio amplifier circuit diagram

    30w audio amplifier circuit diagram

    Abstract: 4700TF
    Text: LM4700 National L A A 4 7 0 0 PRELIMINARY Semiconductor O lJ G Y 'tM T 'C Audio Power Amplifier Series 30W Audio Power Amplifier with Mute and Standby Modes General Description Key Specifications The LM4700 is an audio power amplifier capable of deliver­


    OCR Scan     		PDF LM4700 LM4700 LM4700, 11-lead T0-220 4700TF TF11B 30w audio amplifier circuit diagram

    30w audio amplifier circuit diagram

    Abstract: 3 x 25w audio amplifier circuit diagram LM4700TF 30w stereo amplifier TF11B 25w audio component of 30w amplifier led 30w LM4700 CLASS D POWER amplifier diagram
    Text: LM4700 National PRELIMINARY Semiconductor LM4700 O t d T tU 1 T C Audio Power Amplifier Series 30W Audio Power Amplifier with Mute and Standby Modes General Description Key Specifications The LM4700 is an audio power amplifier capable of deliver­ ing typically SOW of continuous average output power into


    OCR Scan     		PDF LM4700 LM4700, O-220 TL/H/12369-2 LM4700TF TF11B TL/H/12369-1 30w audio amplifier circuit diagram 3 x 25w audio amplifier circuit diagram 30w stereo amplifier TF11B 25w audio component of 30w amplifier led 30w CLASS D POWER amplifier diagram