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Abstract: No abstract text available
Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very
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ZXTD6717E6
OT23-6
Continuo725
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transistor pnp VCEO 12V Ic 1A
Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very
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ZXTD6717E6
OT23-6
OT23-6
transistor pnp VCEO 12V Ic 1A
ZXTD6717E6
ZXTD6717E6TA
ZXTD6717E6TC
transistor pnp 12V 1A Continuous Current Peak
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Abstract: No abstract text available
Text: ZXTD6717E6 COM PLEM ENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS SUM M ARY NPN: V CEO=15V; V CE sat =0.1V; IC= 1.5A; PNP: V CEO=-12V; V CE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very
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ZXTD6717E6
OT23-6
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Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXCT6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A
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ZXCT6718MC
ZXTDB2M832
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MLP832
Abstract: ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC
Text: ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,
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ZXTDB2M832
MLP832
ZXTDB2M832
ZXTDB2M832TA
ZXTDB2M832TC
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Untitled
Abstract: No abstract text available
Text: OBSOLETE - PLEASE USE ZXTC6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,
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ZXTC6718MC
ZXTDB2M832
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marking code C37
Abstract: transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D
Text: Central CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS SOT-563 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak)
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CMLT3410
CMLT7410
CMLT3474
OT-563
CMLT3410
CMLT7410
CMLT3474
100MHz
CMLT3410)
CMLT7410)
marking code C37
transistor c37
marking code C74
marking code C34
complementary npn-pnp
NPN PNP sot-563
dual npn 500ma
vce max 100 ic max 100MA NPN
pnp and npn
amplifier marking code D
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GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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SCE0004I
SC-43)
2SC1815
GT30J124
smd transistor h2a
gt45f122
TPCP8R01
GT30F123
2sc1815 smd type
smd marking 8L01
h2a smd
2SC5471
2sc5200 amplifiers circuit diagram
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2907A
Abstract: 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet
Text: MMDT2227DW NPN+PNP Dual General Purpose Transistors P b Lead Pb -Free 6 5 1 Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN),One 2907A Type (PNP) * Ideal for Low Power Amplification and Switching
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MMDT2227DW
OT-363
SC-88)
J-STD-020C
MIL-STD-202,
06-Dec-07
OT-363
2907A
2222a
npn 2907A
2222a NPN
tr 2222a
npn-pnp dual
NPN, PNP for 500ma, 30v
2222A transistors
22222a
transistor 2222a data sheet
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transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243
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SC-43)
2SC1815
TPS615
TPS616
TPS610
transistor bc 245
247Y
smd transistor h2a
gt30g122
gt35j321
GT45F123
MARKING SMD PNP TRANSISTOR h2a
GT45F122
GT45f122 Series
gt30f122
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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transistor a750
Abstract: No abstract text available
Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
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NSS40302PDR2G
NSS40302P/D
transistor a750
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C40302
Abstract: NSS40302PDR2G
Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
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NSS40302PDR2G
NSS40302P/D
C40302
NSS40302PDR2G
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Untitled
Abstract: No abstract text available
Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
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NSS40302PDR2G
NSS40302P/D
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GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs
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2010/9SCE0004K
SC-43)
2SC1815
700the
GT30F124
TPCP8R01
GT30J124
JAPANESE 2SC TRANSISTOR 2010
smd transistor h2a
smd marking 8L01
tk25e06k3
GT45F122
gt30g124
GT30F123
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npn transistor footprint
Abstract: PBLS2002D PBLS4003V PBLS2003D S 170 MOSFET TRANSISTOR PBLS4003D PBLS1503V PBSS2515YPN PBSS3515VS PBLS2003S
Text: Double low VCEsat BISS transistors in SO8 2.7 A double low VCEsat (BISS) transistors to reduce board space NXP Semiconductors‘ latest double Breakthrough In Small-Signal (BISS) transistors, housed in the industry standard package SO8, deliver performance and board space benefits to a variety of
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complementary npn-pnp
Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES
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ZXTD4591E6
OT23-6
OT23-6
ZXTD4591E6TA
complementary npn-pnp
dual npn 500ma
NPN SOT23-6
Surface mount NPN/PNP complementary transistor
transistor Ic 1A datasheet NPN
ZXTD4591E6
ZXTD4591E6TA
ZXTD4591E6TC
4591
DSA003748
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Untitled
Abstract: No abstract text available
Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES
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ZXTD4591E6
OT23-6
OT23-6
ZXTD459Fax:
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STD815CP40
Abstract: D815C D815CP40 transistor 48
Text: STD815CP40 Complementary transistor pair in a single package Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description
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STD815CP40
STD815CP40
D815C
D815CP40
transistor 48
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Untitled
Abstract: No abstract text available
Text: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device
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NSB13211DW6T1G
NSB13211DW6T1G
SC-88/SOT-363
NSB13211DW6/D
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SMD TRANSISTOR H2A NPN
Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including
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Abstract: No abstract text available
Text: STD815CP40 Complementary transistor pair in a single package Datasheet — production data Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains
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STD815CP40
STD815CP40
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y1 npn
Abstract: ZXTC6718MCTA
Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A •
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ZXTC6718MC
150mV
-220mV
DS31927
y1 npn
ZXTC6718MCTA
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Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A •
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ZXTC6718MC
150mV
-220mV
DS31927
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