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    COMPLEMENTARY NPN-PNP LOW SATURATION DUAL TRANSISTORS Search Results

    COMPLEMENTARY NPN-PNP LOW SATURATION DUAL TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    COMPLEMENTARY NPN-PNP LOW SATURATION DUAL TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


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    PDF ZXTD6717E6 OT23-6 Continuo725

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


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    PDF ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COM PLEM ENTARY NPN/ PNP LOW SATURATION DUAL TRANSISTORS SUM M ARY NPN: V CEO=15V; V CE sat =0.1V; IC= 1.5A; PNP: V CEO=-12V; V CE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


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    PDF ZXTD6717E6 OT23-6

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXCT6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A


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    PDF ZXCT6718MC ZXTDB2M832

    MLP832

    Abstract: ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC
    Text: ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


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    PDF ZXTDB2M832 MLP832 ZXTDB2M832 ZXTDB2M832TA ZXTDB2M832TC

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6718MC ZXTDB2M832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 20V; RSAT = 47m ; C = 4.5A VCEO = -20V; RSAT = 64m ; C = -3.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


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    PDF ZXTC6718MC ZXTDB2M832

    marking code C37

    Abstract: transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D
    Text: Central CMLT3410 NPN CMLT7410 PNP CMLT3474 NPN/PNP SURFACE MOUNT PICOmini DUAL LOW VCE SAT SILICON TRANSISTORS SOT-563 CASE MAXIMUM RATINGS: (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Peak)


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    PDF CMLT3410 CMLT7410 CMLT3474 OT-563 CMLT3410 CMLT7410 CMLT3474 100MHz CMLT3410) CMLT7410) marking code C37 transistor c37 marking code C74 marking code C34 complementary npn-pnp NPN PNP sot-563 dual npn 500ma vce max 100 ic max 100MA NPN pnp and npn amplifier marking code D

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram

    2907A

    Abstract: 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet
    Text: MMDT2227DW NPN+PNP Dual General Purpose Transistors P b Lead Pb -Free 6 5 1 Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN),One 2907A Type (PNP) * Ideal for Low Power Amplification and Switching


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    PDF MMDT2227DW OT-363 SC-88) J-STD-020C MIL-STD-202, 06-Dec-07 OT-363 2907A 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor a750

    Abstract: No abstract text available
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    PDF NSS40302PDR2G NSS40302P/D transistor a750

    C40302

    Abstract: NSS40302PDR2G
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    PDF NSS40302PDR2G NSS40302P/D C40302 NSS40302PDR2G

    Untitled

    Abstract: No abstract text available
    Text: NSS40302PDR2G Complementary 40 V, 6.0 A, Low VCE sat Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed


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    PDF NSS40302PDR2G NSS40302P/D

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    npn transistor footprint

    Abstract: PBLS2002D PBLS4003V PBLS2003D S 170 MOSFET TRANSISTOR PBLS4003D PBLS1503V PBSS2515YPN PBSS3515VS PBLS2003S
    Text: Double low VCEsat BISS transistors in SO8 2.7 A double low VCEsat (BISS) transistors to reduce board space NXP Semiconductors‘ latest double Breakthrough In Small-Signal (BISS) transistors, housed in the industry standard package SO8, deliver performance and board space benefits to a variety of


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    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


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    PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    Untitled

    Abstract: No abstract text available
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


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    PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD459Fax:

    STD815CP40

    Abstract: D815C D815CP40 transistor 48
    Text: STD815CP40 Complementary transistor pair in a single package Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains DIP-8 Description


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    PDF STD815CP40 STD815CP40 D815C D815CP40 transistor 48

    Untitled

    Abstract: No abstract text available
    Text: NSB13211DW6T1G Dual Complementary Bias Resistor Transistors Complementary BRTs with Monolithic Bias Network NSB13211DW6T1G contains a single PNP bias resistor transistor and a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device


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    PDF NSB13211DW6T1G NSB13211DW6T1G SC-88/SOT-363 NSB13211DW6/D

    SMD TRANSISTOR H2A NPN

    Abstract: amplifier circuit using 2sa1943 and 2sc5200 MARKING SMD PNP TRANSISTOR Wf A06 smd transistor TTA1943 MARKING SMD PNP TRANSISTOR h2a 2sC5200, 2SA1943, 2sc5198 2SA1941 amp circuit 2SC3303 TTA006B
    Text: Semiconductor Catalog Mar. 2014 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS h t t p : // w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    Untitled

    Abstract: No abstract text available
    Text: STD815CP40 Complementary transistor pair in a single package Datasheet — production data Features • Low VCE sat ■ Simplified circuit design ■ Reduced component count ■ Low spread of dynamic parameters 8 4 Application ■ 1 Compact fluorescent lamp (CFL) 220 V mains


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    PDF STD815CP40 STD815CP40

    y1 npn

    Abstract: ZXTC6718MCTA
    Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A •


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    PDF ZXTC6718MC 150mV -220mV DS31927 y1 npn ZXTC6718MCTA

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTC6718MC COMPLEMENTARY DUAL 20V LOW SATURATION TRANSISTORS Features and Benefits Mechanical Data NPN Transistor • BVCEO > 20V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 150mV max @ 1A •


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    PDF ZXTC6718MC 150mV -220mV DS31927