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    COMPLEMENTARY MOSFET 10A 60V Search Results

    COMPLEMENTARY MOSFET 10A 60V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    COMPLEMENTARY MOSFET 10A 60V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor P39

    Abstract: MOSFET 4446 ZXTP2039FTC ZXTN2038F ZXTP2039F ZXTP2039FTA
    Text: ZXTP2039F SOT23 80 volt PNP silicon planar medium power transistor Summary V BR CEV > -80V V(BR)CEO > -60V Ic(cont) = -1A Vce(sat) < -600mV @ -1A Complementary type ZXTN2038F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTP2039F -600mV ZXTN2038F ZXTP2039FTA ZXTP2039FTC transistor P39 MOSFET 4446 ZXTP2039FTC ZXTN2038F ZXTP2039F ZXTP2039FTA

    transistor p38

    Abstract: 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F
    Text: ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC transistor p38 100 p38 transistor MOSFET 4446 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    dc motor speed control lm358

    Abstract: 12v 10A dc driver motor control mosfet fcx1053
    Text: Application Focus Issue Number | 001 September 2011 Motor Control Motor control is used to convert electrical energy into rotational energy to control the movement and flow of air and fluids. End products that make use of motor control are: Heating, ventilation and


    Original     		PDF DFN1010, DFN1410, OT25/25, OT353/63. 74LVC1G 74LVCE1G 74AHC1G 74AHCT1G 2N7002W LM358 dc motor speed control lm358 12v 10A dc driver motor control mosfet fcx1053

    TS16949

    Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


    Original     		PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA ZXTN2038FTC D-81541

    complementary npn-pnp

    Abstract: dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD4591E6TA complementary npn-pnp dual npn 500ma NPN SOT23-6 Surface mount NPN/PNP complementary transistor transistor Ic 1A datasheet NPN ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC 4591 DSA003748

    Untitled

    Abstract: No abstract text available
    Text: ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: VCEO=60V; IC= 1A; hFE=100-300 PNP: VCEO=-60V; IC= -1A; hFE=100-300 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6 lead SOT23 package. SOT23-6 FEATURES


    Original     		PDF ZXTD4591E6 OT23-6 OT23-6 ZXTD459Fax:

    Untitled

    Abstract: No abstract text available
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


    Original     		PDF FMMT591 500mW FMMT491 FMMT591TA D-81541

    FMMT591TA

    Abstract: design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp
    Text: FMMT591 Medium power PNP transistor in SOT23 Summary BVCEO > -60V BVEBO > -7V IC cont = -1A PD = 500mW RCE(sat) = 295m⍀ at 1A Complementary part number : FMMT491 Description C Medium power planar PNP bipolar transistor. Features B • VCE(sat) maximum specification reduction


    Original     		PDF FMMT591 500mW FMMT491 FMMT591TA D-81541 FMMT591TA design ideas FMMT591 ZETEX FMMT591 TS16949 FMMT491 buy 1a 60v pnp

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green FZT591 60V PNP MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > -60V IC = -1A high Continuous Current Low saturation voltage VCE sat < -600mV @ -1A


    Original     		PDF FZT591 OT223 -600mV FZT491 AEC-Q101 OT223 J-STD-020 MIL-STD-202, DS33142

    OUTLINE DIMENSIONS in inche

    Abstract: marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA
    Text: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number: ZXTN2018F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTP2027F -100V, ZXTN2018F OUTLINE DIMENSIONS in inche marking 951 12W MARKING sot23 ZXTN2018F ZXTP2027F ZXTP2027FTA

    ZXTN2018F

    Abstract: ZXTN2018FTA ZXTP2027F marking 851
    Text: ZXTN2018F 60V, SOT23, NPN medium power transistor Summary V BR CEV > 140V, V(BR)CEO > 60V IC(cont) = 5A RCE(sat) = 25 m⍀ typical VCE(sat) < 45 mV @ 1A PD = 1.2W Complementary part number : ZXTP2027F Description Advanced process capability and package design have been used to


    Original     		PDF ZXTN2018F ZXTP2027F ZXTN2018F ZXTN2018FTA ZXTP2027F marking 851

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    X5T851

    Abstract: ZX5T951G marking X5T
    Text: A Product Line of Diodes Incorporated Green ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 60V IC = 6A high Continuous Collector Current ICM = 20A Peak Pulse Current


    Original     		PDF ZX5T851G OT223 -60mV ZX5T951G AEC-Q101 OT223 J-STD-020 DS33421 X5T851 marking X5T

    X5T951

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZX5T951G Green 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -60V IC = -5.5A High Continuous Collector Current ICM = -15A Peak Pulse Current


    Original     		PDF ZX5T951G OT223 -70mV ZX5T851G AEC-Q101 OT223 J-STD-020 DS33424 X5T951

    pcb step down transformer

    Abstract: LP3925H
    Text: Energy Saving Products 101 N.Sepulveda Blvd, EL Segundo 90245 California, USA IRAC27951SR IRS27951 Evaluation Board User Guide Rev. 4.1 6/1/2011 International Rectifier Page 1 of 23 PROPRIETARY INFORMATION - This document and the information contained therein are proprietary and are not to be reproduced, used or disclosed


    Original     		PDF IRAC27951SR IRS27951 IRS27951/2 10x60 10x250 LP3925H pcb step down transformer LP3925H

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1822A VEC2616 Power MOSFET http://onsemi.com 60V, 3A, 80mΩ, –60V, –2.5A, 137mΩ, Complementary Dual VEC8 Features • • • • • ON-resistance Nch: RDS on 1=62mΩ(typ.), Pch: RDS(on)1=105mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET


    Original     		PDF ENA1822A VEC2616 PW10s, 900mm2 A1822-9/9

    PWM Four quadrant control

    Abstract: 27k ohm resistor robot control PWM AMPLIFIER SA56 SA56U dc motor control using a single switch
    Text: 16-4&8*%5 .0%6-"5*0/".1-*'*&3 SA56 )551888"1&9.*$305&$)$0.  "1&9   M I C R O T E C H N O L O G Y FEATURES • DELIVERS UP TO 5A CONTINUOUS OUTPUT • OPERATES AT SUPPLY VOLTAGES UP TO 60V • NO “SHOOT-THROUGH” CURRENT


    Original     		PDF SA56U PWM Four quadrant control 27k ohm resistor robot control PWM AMPLIFIER SA56 dc motor control using a single switch

    Motor Driver Circuit schematic 10 ampere

    Abstract: pwm based bidirectional dc motor speed 4431 mosfet mosfet triggering circuit for dc motor dc brushed motor 60v datasheet Snubber circuits theory, design and application climbing robot mosfet motor dc 48v motor driver full bridge 10A motor driver full bridge 10A 100V
    Text: ".1&3&16-4&8*%5 .0%6-"5*0/".1-*'*&3 SA56 DESIGN IDEAS M I C R O T E C H N O L O G Y )551888"1&9.*$305&$)$0.  "1&9   The SA56 is a 5-ampere PWM Amplifier designed for motor-control applications. It operates at up to 60 volts, and can deliver up to 10


    Original     		PDF 48-volt SA56RDU Motor Driver Circuit schematic 10 ampere pwm based bidirectional dc motor speed 4431 mosfet mosfet triggering circuit for dc motor dc brushed motor 60v datasheet Snubber circuits theory, design and application climbing robot mosfet motor dc 48v motor driver full bridge 10A motor driver full bridge 10A 100V

    igbt inverter welder schematic

    Abstract: SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W full bridge mosfet smps 48V 100w SMPS inverter welder schematic half bridge converter 2kw
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Discrete Solutions for Power Supplies Across the board. Around the world. Discrete Solutions for Power Supplies Fairchild Semiconductor is one of the world’s leading providers of Discrete Power Products, including Metal Oxide Semiconductor Field


    Original     		PDF

    LP3925H

    Abstract: international rectifier SMD
    Text: Energy Saving Products 101 N.Sepulveda Blvd, EL Segundo 90245 California, USA IRAC27951SR IRS27951 Evaluation Board User Guide Rev. 4.1 6/1/2011 International Rectifier Page 1 of 23 PROPRIETARY INFORMATION - This document and the information contained therein are proprietary and are not to be reproduced, used or disclosed


    Original     		PDF IRAC27951SR IRS27951 1234526317268954A31B145C IRS27951/2 10x60 10x250 LP3925H LP3925H international rectifier SMD

    IRF9130

    Abstract: IRF9131 irf930 IRF9130 mosfet gate drive for mosfet irf9130 P-channel HEXFET Power MOSFET IRF9132
    Text: H E 0 I MâS 54 52 000^214 5 | Data Sheet No. PD-9.318E INTERNATIONAL RECTIFIER « in t e r n a t io n a l r e c t i f i e r I«R HEXFET TRANSISTORS IRF91 3 0 IRF9131 IRFS1 3 2 Channel IRFS1 3 3 -100 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International Rectifier’s


    OCR Scan     		PDF IRF91 IRF9131 G-196 IRF9130 IRF9131 irf930 IRF9130 mosfet gate drive for mosfet irf9130 P-channel HEXFET Power MOSFET IRF9132