NTHC5513
Abstract: No abstract text available
Text: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / −2.1 A, ChipFET] Features • • • • • • Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to
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NTHC5513
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Untitled
Abstract: No abstract text available
Text: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / −2.1 A, ChipFET] Features • • • • • • Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to
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NTHC5513
NTHC5513/D
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SMD mosfet MARKING code TJ
Abstract: vishay smd diode code marking SMD mosfet MARKING code TC smd transistor marking br smd diode code sd SMD mosfet MARKING code T MOSFET marking smd mosfet pair smd transistor QG SMD BR 17
Text: NTHC5513 Power MOSFET Complementary, 20 V, +3.1 A / −2.1 A, ChipFET] Features • • • • • • Complementary N Channel and P Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to
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NTHC5513
NTHC5513/D
SMD mosfet MARKING code TJ
vishay smd diode code marking
SMD mosfet MARKING code TC
smd transistor marking br
smd diode code sd
SMD mosfet MARKING code T
MOSFET marking smd
mosfet pair
smd transistor QG
SMD BR 17
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NTHC5513
Abstract: NTHC5513T1 NTHC5513T1G A32N
Text: NTHC5513 Power MOSFET 20 V, +3.9 A / −3.0 A, Complementary ChipFETt Features • • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD Package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to
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NTHC5513
NTHC5513/D
NTHC5513
NTHC5513T1
NTHC5513T1G
A32N
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Untitled
Abstract: No abstract text available
Text: NTHC5513 Power MOSFET 20 V, +3.9 A / −3.0 A, Complementary ChipFETt Features • • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size, 40% Smaller than TSOP−6 Package Leadless SMD Package Featuring Complementary Pair ChipFET Package Provides Great Thermal Characteristics Similar to
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NTHC5513
NTHC5513/D
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
SE012
SE090
SE140N
SE115N
diode
2SC5487
sta474a
8050e
SE110N
SLA-7611
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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Complementary MOSFET Half Bridge
Abstract: NDS8852H
Text: N February 1996 NDS8852H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially
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NDS8852H
NDS8852H
Complementary MOSFET Half Bridge
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MARKING CFK
Abstract: code cfk marking code CFK Complementary MOSFETs P-Channel 1.8V MOSFET TLM832D
Text: CTLDM7181-M832D SURFACE MOUNT TLMTM N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7181M832D is a Dual complementary N-Channel and PChannel Enhancement-mode MOSFET, designed for
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CTLDM7181-M832D
CTLDM7181M832D
TLM832D
810mA
950mA,
18-September
MARKING CFK
code cfk
marking code CFK
Complementary MOSFETs
P-Channel 1.8V MOSFET
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marking code CT
Abstract: "MARKING CODE CT" SOT-963
Text: CMRDM3575 SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3575 consists of complementary N-Channel and P-Channel Enhancement-mode silicon MOSFETs designed for
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CMRDM3575
OT-963
200mA
25-February
marking code CT
"MARKING CODE CT"
SOT-963
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MOSFET
Abstract: No abstract text available
Text: ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor Description The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
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ACE4614B
ACE4614B
MOSFET
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AO4620
Abstract: No abstract text available
Text: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
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AO4620
AO4620
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ao4604
Abstract: No abstract text available
Text: AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other
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AO4604
AO4604
AO4604L
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AO4616
Abstract: AO4616L A2527 AO46
Text: AO4616 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4616 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard
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AO4616
AO4616
AO4616L
A2527
AO46
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Untitled
Abstract: No abstract text available
Text: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
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AO4620
AO4620
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AO4620
Abstract: No abstract text available
Text: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard
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AO4620
AO4620
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AON3601
Abstract: No abstract text available
Text: AON3601 Complementary Enhancement Mode Field Effect Transistor General Description Features The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other
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AON3601
AON3601
AON3601L
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Untitled
Abstract: No abstract text available
Text: Issue Number | 001 June 2011 New Product Announcement DMC4040SSD Complementary Dual MOSFET reduces motor losses For use in low voltage single and three-phase brushless DC BLDC motor control applications, the DMC4040SSD complementary dual MOSFET from Diodes
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DMC4040SSD
DMC4040SSD
TPC8406
S14564DY
FDS4987C
ZXBM102x
ZXBM200x
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AO4620
Abstract: No abstract text available
Text: AO4620 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
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AO4620
AO4620
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AOD603A
Abstract: No abstract text available
Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD603A
AOD603A
O252-4L
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Untitled
Abstract: No abstract text available
Text: AOD603A 60V Complementary MOSFET General Description Product Summary The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
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AOD603A
AOD603A
115m1
150m1
88889ABC
11/D2
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AO4625
Abstract: AO4625L
Text: AO4625 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4625 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other
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AO4625
AO4625
AO4625L
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logic level complementary MOSFET
Abstract: No abstract text available
Text: in te r rii Complementary Pairs 9 Power M O SFE T Products PAGE Complementary Pairs Data Sheets RF1K49092 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET. . 9-3 RF1K49224 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Complementary LittleFET™ Power MOSFET.
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RF1K49092
RF1K49224
RF3V49092,
RF3S49092SM
0A/10A,
logic level complementary MOSFET
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