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    COMMON COLLECTOR PNP Search Results

    COMMON COLLECTOR PNP Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8854001CA Texas Instruments Hex Inverters With Open-Collector Outputs 14-CDIP -55 to 125 Visit Texas Instruments Buy
    SNJ54ALS1035J Texas Instruments Hex Noninverting Buffers With Open-Collector Outputs 14-CDIP -55 to 125 Visit Texas Instruments Buy
    SN54S05J Texas Instruments Hex Inverters With Open-Collector Outputs 14-CDIP -55 to 125 Visit Texas Instruments
    SN74ALS1005DR Texas Instruments Hex Inverters With Open-Collector Outputs 14-SOIC 0 to 70 Visit Texas Instruments Buy

    COMMON COLLECTOR PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EMC3DXV5T5

    Abstract: No abstract text available
    Text: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MAXIMUM RATINGS TA = 25°C unless otherwise noted, common for Q1


    Original     		PDF OT-553 EMC3DXV5T5

    Untitled

    Abstract: No abstract text available
    Text: MMDTA124W PNP Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA124W 22 22 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage


    Original     		PDF MMDTA124W

    Untitled

    Abstract: No abstract text available
    Text: MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage


    Original     		PDF MMDTA115W

    Untitled

    Abstract: No abstract text available
    Text: MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage


    Original     		PDF MMDTA115W

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SB1679G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SB1679G

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Features ■ Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SB1679G

    2097B

    Abstract: 2SC4520 FP207 marking 207
    Text: Ordering number:ENN6457 PNP/NPN Epitaxial Planar Silicon Transistors FP207 Push-Pull Circuit Applications Package Dimensions unit:mm 2097B [FP207] 1.5 5 4 3 2 1 0 to 0.1 0.2 0.3 1.75 1 : Base 1 PNP TR 2 : Collector 1 (PNP TR) 3 : Emitter Common 4 : Collector 2 (NPN TR)


    Original     		PDF ENN6457 FP207 2097B FP207] 25max FP207 2A1729 2097B 2SC4520 marking 207

    NTE44

    Abstract: NTE45
    Text: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE44 NTE45 100Hz, NTE44 NTE45

    NTE43

    Abstract: NTE42
    Text: NTE42 NPN & NTE43 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		PDF NTE42 NTE43 NTE43 NTE42

    NTE40

    Abstract: NTE41
    Text: NTE40 NPN & NTE41 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE40 NTE41 NTE40 NTE41

    NTE40

    Abstract: NTE41
    Text: NTE40 NPN & NTE41 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE40 NTE41 NTE40 NTE41

    NTE42

    Abstract: NTE43 transistor NTE43
    Text: NTE42 NPN & NTE43 (PNP) Silicon Complementary Transistors Dual, Differential Amp, High Gain, Low Noise, Common Emitter Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V


    Original     		PDF NTE42 NTE43 NTE42 NTE43 transistor NTE43

    NTE44

    Abstract: NTE45
    Text: NTE44 NPN & NTE45 (PNP) Silicon Complementary Transistors Dual, Bias Amp, High Gain, Low Noise, Common Base Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V


    Original     		PDF NTE44 NTE45 100Hz, NTE44 NTE45

    NSVUMC2NT1G

    Abstract: NSVUMC2 UMC3NT1G SC marking code NPN transistor
    Text: UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http://onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC−88A/SOT−353 CASE 419A STYLE 6 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network


    Original     		PDF OT-353 NSVUMC2NT1G NSVUMC2 UMC3NT1G SC marking code NPN transistor

    EMC3DXV5T5

    Abstract: No abstract text available
    Text: EMC3DXV5T1, EMC3DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-553 EMC3DXV5T5

    marking u5

    Abstract: No abstract text available
    Text: EMC5DXV5T1, EMC5DXV5T5 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT Bias Resistor Transistor contains a single transistor with


    Original     		PDF OT-553 marking u5

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1G, UMC3NT1G, UMC5NT1G Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 2 R1 The Bias Resistor Transistor BRT contains a single transistor with


    Original     		PDF OT-353

    IC 4050 DATA SHEET

    Abstract: SOT-353 transistor marking T2
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with


    Original     		PDF OT-353 IC 4050 DATA SHEET SOT-353 transistor marking T2

    Untitled

    Abstract: No abstract text available
    Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with


    Original     		PDF OT-353

    SC-88A npn

    Abstract: No abstract text available
    Text: UMC2NT1G, UMC3NT1G, UMC5NT1G Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor BRT contains a single transistor with


    Original     		PDF OT-353 SC-88A npn

    Untitled

    Abstract: No abstract text available
    Text: 2957 , HIGH-VOLTAGE HIGH-CURRENT SOURCE DRIVER Comprised of five common-collector NPN Darlington output stages, associated common-base PNP input stages, and a common ENABLE stage, the UDN2957A high-voltage, high-current source driver is used to switch the ground end of loads that are directly connected to a


    OCR Scan     		PDF UDN2957A

    UDN2957A

    Abstract: UDN-2957A IUPN2957A
    Text: HIGH-VOLTAGE, H IG H -CU RRENT SOURCE D RIVER Comprised of five common-collector NPN Darlington output stages, associated common-base PNP input stages, and a common ENABLE stage, the UDN2957A high-voltage, high-current source driver is used to switch the ground end of loads that are directly connected to a


    OCR Scan     		PDF UDN2957A UDN-2957A IUPN2957A

    BCV65B

    Abstract: BCV65
    Text: Philips Semiconductors Product specification NPN/PNP general purpose transistors FEATURES BCV65; BCV65B PINNING • Low current max. 100 mA PIN • Low voltage (max. 30 V). DESCRIPTION collector 1 ,3 APPLICATIONS 2 common base 4 common emitter • General purpose switching and amplification.


    OCR Scan     		PDF BCV65; BCV65B OT143B BCV65 OT143B) BCV65B