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    COMMON COLLECTOR AMPLIFIER APPLICATIONS Search Results

    COMMON COLLECTOR AMPLIFIER APPLICATIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy

    COMMON COLLECTOR AMPLIFIER APPLICATIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MPSH24

    Abstract: MMBTH24 MPSH11
    Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator


    Original     		PDF MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MPSH24 MMBTH24

    MMBTH24

    Abstract: MPSH11 MPSH24
    Text: MPSH24/MMBTH24 MPSH24/MMBTH24 NPN General Purpose Amplifier 3 • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator


    Original     		PDF MPSH24/MMBTH24 100mA 300MHz, MPSH11 OT-23 MMBTH24 MPSH24

    MPSH34

    Abstract: MPSH11
    Text: MPSH34 MPSH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET


    Original     		PDF MPSH34 100mA 300MHz, MPSH11 MPSH34

    MMBTH34

    Abstract: MPSH11
    Text: MMBTH34 MMBTH34 NPN General Purpose Amplifier • This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100mA to 20mA range to 300MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving FET mixers.


    Original     		PDF MMBTH34 100mA 300MHz, MPSH11 OT-23 MMBTH34

    MMBTH24

    Abstract: MPSH11 MPSH24 V30I
    Text: MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications


    Original     		PDF MPSH24 MMBTH24 OT-23 MPSH11 MPSH24 MMBTH24 V30I

    MPSH24

    Abstract: MMBTH24 MPSH11
    Text: N MPSH24 MMBTH24 C E C TO-92 BE B SOT-23 Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications


    Original     		PDF MPSH24 MMBTH24 OT-23 MPSH11 MPSH24 MMBTH24

    Untitled

    Abstract: No abstract text available
    Text: VAM 120 120 Watts, 27 Volts, Class AB Defcom 100 - 150 MHz GENERAL DESCRIPTION CASE OUTLINE The VAM 120 is a COMMON EMITTER device designed to operae in a collector modulated VHF power amplifier. It is a common emitter device, optimized for use in the 100-150 MHz range.


    Original     		PDF

    MPSH11

    Abstract: MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor
    Text: MPSH11 MMBTH11 C E C TO-92 BE SOT-23 B Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    Original     		PDF MPSH11 MMBTH11 OT-23 MPSH11 MPS-H11 transistor mark l6 MMBTH11 Q100 Z-235 Ohmite RF transistor x vs L1245 P4 transistor

    15V 5A Power Supply Schematic

    Abstract: 850C TPA02 TPA02A THALER CORPORATION ATPA02
    Text: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION. Represented by: Rhopoint Components Ltd. www.rhopointcomponents.com FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.


    Original     		PDF TPA02/ TPA02A 600ns 350kHz TPA02 TPA02A TPA02/02A 15V 5A Power Supply Schematic 850C THALER CORPORATION ATPA02

    norton amplifier

    Abstract: LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode
    Text: National Semiconductor Application Note 278 Timothy T. Regan September 1981 Why Another Norton Amplifier? there is no Miller effect on the collector-to-base capacitance of the input transistor. Also, there is no collector-to-emitter parasitic feedback in the common base configured transistor, Q2, so the high frequency signal appearing at the output


    Original     		PDF AN-278 norton amplifier LM3900 VCO jfet discrete differential transistor jfet cascode internal structure of ic lm3900 ULTRA HIGH SPEED FREQUENCY DIVIDER LM359 operational amplifier discrete schematic norton op. amp Designing Type II Compensation for Current Mode

    TH9030

    Abstract: No abstract text available
    Text: TH9030 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI TH9030 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • Common Collector • Hermetic Microstrip Package


    Original     		PDF TH9030 TH9030

    NEX230165

    Abstract: nex2301
    Text: NEX230165 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI NEX230165 is Designed for General Purpose Power oscillator Amplifier Applications up to 2.3 GHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • Common Collector • Hermetic Microstrip Package


    Original     		PDF NEX230165 NEX230165 nex2301

    2SC3611

    Abstract: No abstract text available
    Text: Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 3.8±0.3 • High transition frequency fT • Small collector output capacitance Common base, input open circuited Cob • Wide current range


    Original     		PDF 2SC3611 O-126B 2SC3611

    850C

    Abstract: TPA02 TPA02A TO-38 SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A
    Text: TPA02/ TPA02A Power Operational Amplifier THALER CORPORATION • 2015 N. FORBES BOULEVARD • TUCSON, AZ. 85745 • 520 882-4000 FEATURES EQUIVALENT SCHEMATIC • COMMON COLLECTOR OUTPUT STAGE · CLOSE TO RAIL OUTPUT – ±1.2V TO RAIL · HIGH SLEW RATE – 20V/µsec.


    Original     		PDF TPA02/ TPA02A 600ns 350kHz TPA02 TPA02A TPA02/02A 850C TO-38 SCHEMATIC DIAGRAM POWER SUPPLY 12v 5A

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 D3000

    CBVK741B019

    Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C B TO-92 E B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 transistor 26

    Untitled

    Abstract: No abstract text available
    Text: MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH11 MMBTH11 MPSH11 OT-23 MPSH11/MMBTH11,

    MPS-H24

    Abstract: MPSH24
    Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 mA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 MPS-H24

    ic nn 5198 k

    Abstract: nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100
    Text: I MMBTH11 Discrete P O W ER & S ig n a l Technologies National MPSH11 Semiconductor'“ MPSH11 NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 fiA to 10 mA range to 300 MHz, and low frequency drift common-base


    OCR Scan     		PDF MPSH11 MMBTH11 b5D1130 ic nn 5198 k nn 5198 k Transistor C 5196 fcm 10.7 mhz transistor s34 ic nn 5198 r Transistor C 5198 MMBTH11 MPSH11 Q100

    Untitled

    Abstract: No abstract text available
    Text: B iM E D N P U C T O R « MPSH11 MMBTH11 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 pA to 10 mA range to 300 MHz, and low frequency drift common-base VHF oscillator applications with high output levels for driving


    OCR Scan     		PDF MPSH11 MMBTH11 MPSH11

    HN3C03FU

    Abstract: tuner uhf Ghz hn3c03
    Text: TOSHIBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)


    OCR Scan     		PDF HN3C03FU HN3C03FU tuner uhf Ghz hn3c03

    HN3C03FU

    Abstract: No abstract text available
    Text: TOSHIBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)


    OCR Scan     		PDF HN3C03FU HN3C03FU

    transistor s34

    Abstract: MPSH11 MPS-H11
    Text: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to


    OCR Scan     		PDF MMBTH11 MPSH11 OT-23 bSD113D transistor s34 MPSH11 MPS-H11

    HN3C03FU

    Abstract: No abstract text available
    Text: TO SH IBA HN3C03FU TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C03FU Unit in mm TV TUNER, UHF OSCILLATOR APPLICATION TV UHF RF AMPLIFIER APPLICATION 2.1 ± 0.1 COMMON COLLECTOR • Including Two Devices in US6 • Output Capacitance : C0b = 1.2pF (Typ.)


    OCR Scan     		PDF HN3C03FU N3C03FU HN3C03FU