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    COMMON BASE BJT Search Results

    COMMON BASE BJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFZAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    COMMON BASE BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    bjt specifications

    Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
    Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT


    Original     		PDF AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor

    Untitled

    Abstract: No abstract text available
    Text: Agamem Microelectronics Inc. PRELIMINARY AA51890AP SERVO MOTOR CONTROLLER •OVERVIEW The AA51890AP is a BJT integrated circuit for servo motor control applications. It has the feature of internal circuit of maintaining constant voltage which helps stabilizing from fluctuation caused by voltage source and


    Original     		PDF AA51890AP AA51890AP TSSOP16.

    servo wiring diagram

    Abstract: pulse stretcher circuit diagram aa51890 pulse stretcher circuit servo potentiometer radio controlled SERVO DRIVER servo MOTOR H-bridge Mosfet Driver servo motors servo motor controller diagram
    Text: Agamem Microelectronics Inc. PRELIMINARY AA51890 SERVO MOTOR CONTROLLER • DESCRIPTION The AA51890 is a BJT integrated circuit for servo motor control applications. It has the feature of internal circuit of maintaining constant voltage which helps stabilizing from fluctuation


    Original     		PDF AA51890 AA51890 TSSOP16L. servo wiring diagram pulse stretcher circuit diagram pulse stretcher circuit servo potentiometer radio controlled SERVO DRIVER servo MOTOR H-bridge Mosfet Driver servo motors servo motor controller diagram

    servo motor control circuit

    Abstract: typical servo motor
    Text: Agamem Microelectronics Inc. PRELIMINARY AA51890AP SERVO MOTOR CONTROLLER •OVERVIEW The AA51890AP is a BJT integrated circuit for servo motor control applications. It has the feature of internal circuit of maintaining constant voltage which helps stabilizing from fluctuation caused by voltage source and


    Original     		PDF AA51890AP AA51890AP TSSOP16. servo motor control circuit typical servo motor

    BLY93a

    Abstract: No abstract text available
    Text: Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. P a r t Number: BLY93A DescrIption: BJTs , Si NPN Power HP" The RF Line 40 W - 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR


    Original     		PDF BLY93A 30Vdc. 175MHzl BLY93a

    HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

    Abstract: No abstract text available
    Text: RMO1D-1 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design Tzung-Yin Lee and Yuh-Yue Chen Skyworks Solutions, Inc. 5221 California Avenue, Irvine, CA 92617 Abstract — This paper presents a methodology to characterize and model BJT’s mismatch behavior for RFIC


    Original     		PDF 40PA/Pm2 200PA/Pm2 HF Mismatch Characterization and Modeling of Bipolar Transistors for RFIC Design

    Application Note 41

    Abstract: phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt
    Text: VISHAY SEMICONDUCTORS www.vishay.com Optocouplers and Solid-State Relays Application Note 41 Faster Switching from Standard Couplers Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant


    Original     		PDF 16-Mar-12 Application Note 41 phototransistor spice model 2N3904 npn bjt transistor power BJT PNP spice model bjt ce amplifier application 2n3904 npn transistor optocoupler spice model photo coupler application note 2N3904 TRANSISTOR using darlington amplifier common emitter bjt

    phototransistor spice model

    Abstract: optocoupler, spice model, resistor pnp phototransistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model 2N3904 TRANSISTOR using darlington amplifier optocoupler basics optocoupler spice
    Text: Application Notes Vishay Semiconductors "Faster Switching" from "Standard Couplers" Optocouplers offer tremendous advantages in minimizing EMI and noise susceptibility. It is not an exaggeration to say that a healthy sprinkling of opto-isolation has often meant the


    Original     		PDF 11-Feb-08 phototransistor spice model optocoupler, spice model, resistor pnp phototransistor BJT 2n3904 bjt ce amplifier application optocoupler spice model power BJT PNP spice model 2N3904 TRANSISTOR using darlington amplifier optocoupler basics optocoupler spice

    2n7002ltig

    Abstract: BJT with V-I characteristics AND8305 power BJT Alternator regulator Q5 LED MBRD360 NCP3063DR2G TLV431ASN1T1G BAV99LT1
    Text: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or


    Original     		PDF AND8305/D NCP3063 2n7002ltig BJT with V-I characteristics AND8305 power BJT Alternator regulator Q5 LED MBRD360 NCP3063DR2G TLV431ASN1T1G BAV99LT1

    2n7002ltig

    Abstract: TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340
    Text: AND8305/D 350 mA Buck Boost LED Driver using Bipolar Junction Transistors BJTs , High Side Current Sensing and a NCP3063 Controller http://onsemi.com Prepared by: DENNIS SOLLEY ON Semiconductor INTRODUCTION (typically absorbed by avalanching alternator rectifiers or


    Original     		PDF AND8305/D NCP3063 2n7002ltig TLV431ASN1T1G LRC-LR1206-01-R400-F 2N7002LTI MBRD360 5C BJT NST30010MXV6T1G power BJT PNP BAV99LT1 MBRA340

    transistor c 5936 circuit diagram

    Abstract: AT-32063 c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Hewlett-Packard AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors mounted in a


    Original     		PDF AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E transistor c 5936 circuit diagram c 2073 amplifier circuit diagram D2030 18 sot-363 rf power amplifier S2PB

    transistor BD 139

    Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a


    Original     		PDF AT-32063 AT32063 AT-320XX OT-363 SC-70) AT-32063, transistor BD 139 AP 1100 R1 darlington cascode second stage transistor AT-320 agilent

    darlington cascode second stage

    Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors


    Original     		PDF AT-32063 AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E darlington cascode second stage transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR d2030

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
    Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage


    Original     		PDF AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt

    POWER BJTs

    Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
    Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor


    Original     		PDF AN1540/D AN1540 AN1540/D* POWER BJTs AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time

    Untitled

    Abstract: No abstract text available
    Text: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller


    Original     		PDF UCC28722 UCC28722 50-mW

    TRANSISTOR cBC 449

    Abstract: No abstract text available
    Text: UCC28722 www.ti.com SLUSBL7A – DECEMBER 2013 – REVISED JANUARY 2014 Constant-Voltage, Constant-Current Controller With Primary-Side Regulation, BJT Drive Check for Samples: UCC28722 FEATURES DESCRIPTION • • The UCC28722 flyback power supply controller


    Original     		PDF UCC28722 UCC28722 50-mW TRANSISTOR cBC 449

    fairchild power bjt

    Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
    Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver


    Original     		PDF FJP2160D fairchild power bjt fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor

    Untitled

    Abstract: No abstract text available
    Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition


    Original     		PDF FJP2160D FJP2160D

    "BJT Transistors"

    Abstract: BJT Transistors antilog Absolute Value Circuit RMS-to-dc circuit diagram of antilog circuit RMS-to-DC Converter LTC1966 simple bjt circuit DN288
    Text: advertisement RMS-to-DC Conversion Just Got Easy – Design Note 288 Glen Brisebois and Joseph Petrofsky collector current of bipolar junction transistors. This method suffers from a variety of problems. BJT transistors match and track well over temperature while operating at the same collector current, for example in op


    Original     		PDF LTC1966 1-800-4-LINEAR. dn288f "BJT Transistors" BJT Transistors antilog Absolute Value Circuit RMS-to-dc circuit diagram of antilog circuit RMS-to-DC Converter simple bjt circuit DN288

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA615 SBOS299C – FEBRUARY 2004 – REVISED OCTOBER 2006 Wide-Bandwidth, DC Restoration Circuit FEATURES • • • • • • • • DESCRIPTION PROPAGATION DELAY: 1.9ns BANDWIDTH: OTA: 710MHz Comparator: 730MHz


    Original     		PDF OPA615 SBOS299C 710MHz 730MHz 100dB OPA615

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA615 SBOS299C – FEBRUARY 2004 – REVISED OCTOBER 2006 Wide-Bandwidth, DC Restoration Circuit FEATURES • • • • • • • • DESCRIPTION PROPAGATION DELAY: 1.9ns BANDWIDTH: OTA: 710MHz Comparator: 730MHz


    Original     		PDF OPA615 SBOS299C 710MHz 730MHz 100dB

    smd transistor A11b

    Abstract: smd diode code 1B2 transistor book transistor ic equivalent book
    Text: GaAs Components Infineon •aîfinülogies Technical Information 3 Technical Information 3.1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips.


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