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    COMMON BASE AMPLIFIER CIRCUIT DESIGNING FOR OBSER Search Results

    COMMON BASE AMPLIFIER CIRCUIT DESIGNING FOR OBSER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    COMMON BASE AMPLIFIER CIRCUIT DESIGNING FOR OBSER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    uhf amplifier design

    Abstract: 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN419/D SEMICONDUCTOR APPLICATION NOTE AN419 UHF AMPLIFIER DESIGN USING DATA SHEET DESIGN CURVES INTRODUCTION k [y12 y21 + Re y12y21 ] Freescale Semiconductor, Inc. GL = The design of UHF amplifiers usually involves a particular


    Original     		PDF AN419/D AN419 y12y21) uhf amplifier design 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL

    Dielectric Resonator Oscillator DRO

    Abstract: yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Note that since the transistor s parameters change with frequency, k also varies with frequency.


    Original     		PDF 5968-3628E Dielectric Resonator Oscillator DRO yig oscillator application note yig tuned oscillator A008 amplifier TRANSISTOR AT-41400 dielectric resonator Catalog Bipolar Transistor yig oscillator A008 ATF-26836

    yig oscillator application note

    Abstract: Dielectric Resonator Oscillator DRO dielectric resonator dielectric resonator oscillator variable oscillator Lumped Resonator Oscillator A008 amplifier TRANSISTOR AT-41400 bipolar transistor ghz s-parameter FET transistors with s-parameters
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to


    Original     		PDF 5964-3431E 5968-3628E yig oscillator application note Dielectric Resonator Oscillator DRO dielectric resonator dielectric resonator oscillator variable oscillator Lumped Resonator Oscillator A008 amplifier TRANSISTOR AT-41400 bipolar transistor ghz s-parameter FET transistors with s-parameters

    AVANTEK YIG tuned oscillator

    Abstract: yig oscillator hp Avantek yig avantek yig oscillator avantek YTO AVANTEK, yig yig oscillator avantek avantek vto Design DC Stability Into Your Transistor Circuits A008 amplifier TRANSISTOR
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. Introduction This application note describes a method of designing oscillators using small signal s parameters. The background theory is first developed to


    Original     		PDF 5964-3431E 5968-3628E AVANTEK YIG tuned oscillator yig oscillator hp Avantek yig avantek yig oscillator avantek YTO AVANTEK, yig yig oscillator avantek avantek vto Design DC Stability Into Your Transistor Circuits A008 amplifier TRANSISTOR

    AVANTEK YIG tuned oscillator

    Abstract: avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator avantek vto yig oscillator avantek yto oscillator
    Text: Microwave Oscillator Design Application Note A008 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 5964-3431E 5968-3628E AVANTEK YIG tuned oscillator avantek YTO Avantek yig yig oscillator hp AVANTEK, yig yig tuned oscillator avantek yig oscillator avantek vto yig oscillator avantek yto oscillator

    PTH hole diameter vs lead resistor

    Abstract: common emitter amplifier circuit designing W105 0805CS-080XMBC HBFP-0405 HBFP0420 HBFP-0420 HBPF-0405 common base amplifier circuit designing
    Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface


    Original     		PDF HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 PTH hole diameter vs lead resistor common emitter amplifier circuit designing W105 0805CS-080XMBC HBPF-0405 common base amplifier circuit designing

    0805CS-080XMBC

    Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2
    Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


    Original     		PDF HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT343) 0805CS-080XMBC HBFP0420 common emitter amplifier circuit designing HBFP-04XX-2

    PTH hole diameter vs lead resistor

    Abstract: HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2
    Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


    Original     		PDF HBFP-0405 HBFP-0420 SC-70 OT343) PTH hole diameter vs lead resistor HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2

    HBPF-0420

    Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


    Original     		PDF HBFP-0405 HBFP-0420 SC-70 OT343) HBPF-0420 SOT343 C5 W04 transistor Transistor W06 transistor w04

    w06 transistor

    Abstract: Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 HBFP-0420 W04 sot 23 W02 sot 23 W02 transistor
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Avago Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT-343 surface


    Original     		PDF HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT-343) HBFP0420 w06 transistor Transistor W06 W04 transistor w04 transistor sot 23 w02 transistor sot 71 transistor sot w04 W04 sot 23 W02 sot 23 W02 transistor

    4562 mosfet

    Abstract: analog optocoupler hcnr201 hcnr201 Jerald Graeme hcnr201 application colpitt oscillator design hcnr201 optocoupler application optocoupler as isolated linear opamp diagram ic A 7800A isolated dc linear feedback op-amp
    Text: Overview of High Performance Analog Optocouplers Application Note 1357 Designing Analog Circuits Using the HCNR201 Internally, the HCNR201 analog optocoupler consists of two photo detectors symmetrically placed between the input LED. Thus, the radiant flux received by each of the


    Original     		PDF HCNR201 HCNR201 HCPL-7800A HCPL-788J. HCNR201. HCPL-4562. 5989-0804EN AV02-1847EN 4562 mosfet analog optocoupler hcnr201 Jerald Graeme hcnr201 application colpitt oscillator design hcnr201 optocoupler application optocoupler as isolated linear opamp diagram ic A 7800A isolated dc linear feedback op-amp

    common base amplifier circuit designing

    Abstract: common base amplifier circuit common collector amplifier circuit designing common emitter amplifier common emitter amplifier circuit designing TO-220 packing methods 2SA0914 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.5±0.1 4.6±0.2 Rating Collector-base voltage Emitter open


    Original     		PDF 2SC1953 2SA0914 2SA0914, O-126B common base amplifier circuit designing common base amplifier circuit common collector amplifier circuit designing common emitter amplifier common emitter amplifier circuit designing TO-220 packing methods 2SA0914 2SC1953

    2SA0914

    Abstract: 2SC1953
    Text: Power Transistors 2SC1953 Silicon NPN epitaxial planar type For audio system/pre-drive Complementary to 2SA0914 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 0.75±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-emitter voltage Base open


    Original     		PDF 2SC1953 2SA0914 O-126B-A1 2SA0914 2SC1953

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1123 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2631 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1123 2SC2631 2SC2631,

    step down transformer footprint

    Abstract: No abstract text available
    Text: LMH6517 October 14, 2009 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain General Description Features The LMH6517 contains two high performance digitally controlled variable gain amplifiers DVGA . It has been designed


    Original     		PDF LMH6517 LMH6517 step down transformer footprint

    Untitled

    Abstract: No abstract text available
    Text: LMH6517 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain General Description Features The LMH6517 contains two high performance, digitally controlled variable gain amplifiers DVGA . It has been designed for use in narrowband and broadband IF sampling applications. Typically the LMH6517 drives a high performance ADC


    Original     		PDF LMH6517

    GB3 LLP

    Abstract: LMH6517SQ LMH6517SQE LMH6517SQX
    Text: LMH6517 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain General Description Features The LMH6517 contains two high performance, digitally controlled variable gain amplifiers DVGA . It has been designed for use in narrowband and broadband IF sampling applications. Typically the LMH6517 drives a high performance ADC


    Original     		PDF LMH6517 LMH6517 GB3 LLP LMH6517SQ LMH6517SQE LMH6517SQX

    ADC16DV160

    Abstract: OPA BASEBAND MHZ LMH6517SQ LMH6517SQE LMH6517SQX SCSB ADCS9888 TEST
    Text: LMH6517 Low Power, Low Noise, IF and Baseband, Dual 16 bit ADC Driver With Digitally Controlled Gain General Description Features The LMH6517 contains two high performance, digitally controlled variable gain amplifiers DVGA . It has been designed for use in narrowband and broadband IF sampling applications. Typically the LMH6517 drives a high performance ADC


    Original     		PDF LMH6517 LMH6517 ADC16DV160 OPA BASEBAND MHZ LMH6517SQ LMH6517SQE LMH6517SQX SCSB ADCS9888 TEST

    common collector amplifier circuit designing

    Abstract: 2SC2632 common emitter amplifier Silicon PNP epitaxial planar type For low-frequency 2SA1124
    Text: Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 ea


    Original     		PDF 2SA1124 2SC2632 2SC2632, common collector amplifier circuit designing 2SC2632 common emitter amplifier Silicon PNP epitaxial planar type For low-frequency 2SA1124

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC3943 Silicon NPN epitaxial planar type For video amplifier 2.7±0.2 14.0±0.5 Rating Unit Collector-base voltage Emitter open VCBO 110 V Collector-emitter voltage (Resistor between B and E) VCER 100 V VCEO Emitter-base voltage (Collector open)


    Original     		PDF 2SC3943

    2SA1124

    Abstract: 2SC2632 2sa112
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA1124 Silicon PNP epitaxial planar type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 Unit: mm 4.9±0.2 0.7±0.1 0.7+0.3 –0.2 • Satisfactory forward current transfer ratio hFE collector current IC


    Original     		PDF 2002/95/EC) 2SA1124 2SC2632 2SC2632, 2SA1124 2SC2632 2sa112

    2SC3611

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original     		PDF 2002/95/EC) 2SC3611 O-126B 2SC3611

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SA0720A 2SA720A) 2SC1318A

    PL81

    Abstract: PL 81 cg1f 2X20 PENTODE pl IPL81 scans-0018002 PENTODE pl 50
    Text: PHILIPS fP L8 Ï PENTODE for* use as line time base output tube PENTHODE pour utilisation comme tube de sortie de base de temps lignes PENTODE zur Verwendung als Zeilenzeitbasisendröhre Heating ; indirect by A.C. or D.C. series supply Chauffage: indirect par C.A. ou C.C.


    OCR Scan     		PDF fPL81 max22 PL81 PL 81 cg1f 2X20 PENTODE pl IPL81 scans-0018002 PENTODE pl 50