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SSM10N961L
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 |
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TMS4030JL
|
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Rochester Electronics LLC
|
TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 |
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4164-15FGS/BZA
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Rochester Electronics LLC
|
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) |
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4164-12JDS/BEA
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Rochester Electronics LLC
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4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) |
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4164-15JDS/BEA
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Rochester Electronics LLC
|
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) |
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